Comparative study of C-V characteristics in Si-NWFET and MOSFET

Abstract

In this paper, we report the C-V characteristics measured from nanowire capacitor (NWCAP), which has been fabricated by connecting in parallel a large number of identically processed nanowire FETs. By using the C-V data from nanowire devices, we examined the gate voltage response of undoped floating channel. Furthermore, the bias independent overlap capacitance and bias dependent fringing capacitance associated with 1D channel contacting 3D Source/ Drain are extracted. The measured capacitance data are compared with the planar MOS capacitor (MOSCAP) data.