International Symposium for Testing and Failure Analysis最新文献_第2页

A Quick and Intuitive Approach of Handeling In-Amp Failures Towards Lower Cycle Time and Improving Failure Mechanism Confidence and Quality 一种快速、直观的处理放大器内故障的方法，以缩短周期时间，提高故障机制的可信度和质量

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0086

Khristopherson C. Cajucom, Arnulfo Evangelista, Isovelle Adrias, Ryan Ordiales, Godofredo Arnaiz

引用次数: 0

AI Application in Yield and Failure Analysis to Reduce Overall Time-to-Defect and Failure Root-Cause Isolation 人工智能在良率和故障分析中的应用，以减少总体缺陷时间和故障根源隔离

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0402

Sailesh Suthar, Lay Lay Goh

{"title":"AI Application in Yield and Failure Analysis to Reduce Overall Time-to-Defect and Failure Root-Cause Isolation","authors":"Sailesh Suthar, Lay Lay Goh","doi":"10.31399/asm.cp.istfa2022p0402","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0402","url":null,"abstract":"\u0000 This paper presents conceptual application of AI in Failure Analysis to connect to various databases in semiconductor manufacturing and generating interactive data visualization to isolate root cause of failure faster vs traditional methods. Generally available low-cost software application like Microsoft Power BI (Business Intelligence) is utilized to visualize big data to isolate failure modes at wafer, die, and package level. This historic data visualization knowledge is further used by failure analyst to process failure mode isolation much faster based on failed package unit history. Semiconductor manufacturing companies have various big data such as wafer fab processing, die level test, or wafer sort and packaged die testing including customer return. MS Power BI application has ability to connect to these separate big databases and create unified data visualization to isolate failure modes through faster inter-connectivity and \"connecting the dots\" to provide bigger picture or drill down to finer unit level detail. This level of visualization utilizes already available info/data to help reduce overall time-to-defect. With this failure background, engineers can plan fault isolation and analysis and reduce overall time to find root-cause of failure.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132483339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Differential Laser Voltage Probe—A New Approach to a Fundamental Technique 差分激光电压探头——一种基础技术的新途径

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0144

K. Dickson, G. Lange, K. Serrels, Jose Garcia, K. Erington, D. Bodoh, K. Yang, Jianxun Mou

{"title":"Differential Laser Voltage Probe—A New Approach to a Fundamental Technique","authors":"K. Dickson, G. Lange, K. Serrels, Jose Garcia, K. Erington, D. Bodoh, K. Yang, Jianxun Mou","doi":"10.31399/asm.cp.istfa2022p0144","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0144","url":null,"abstract":"\u0000 Laser Voltage Probing (LVP) is an essential Failure Analysis (FA) technique that has been widely adopted by the industry. Waveforms that are collected allow for the analyst to understand various internal failure modes related to timing or abnormal circuit behavior. As technology nodes shrink to the point where multiple transistors reside within the diffraction-limited laser spot size, interpretation of the waveforms can become extremely difficult. In this paper we discuss some of the evolving challenges faced by LVP and propose a new technique known as Differential LVP (dLVP) that can be used to debug marginal failing devices that exhibit a pass/fail boundary in their shmoo plot. We demonstrate how separate pass and fail LVP waveforms can be collected simultaneously and compared to immediately identify whether logic is corrupted and when the corruption occurs. The benefits of this new technique are many. They include guarantees of equivalent pass vs. fail data independent of crosstalk, system noise, stage drift, probe placement, temperature effects, or the diffraction-limited resolution of the probe system. Implementing dLVP into existing tools could extend their effective lifetimes and improve their efficacy related to the demands posed by the debug of 5nm technologies and smaller geometries. We anticipate that fully integrated and evolved dLVP will complement workhorse FA applications such as Laser Assisted Device Alteration (LADA) and Soft Defect Localization (SDL) analysis. Wherein those techniques map timing marginalities propagating to, and observed by, a capture flop, dLVP can extend such capabilities by identifying the first instance of corrupted logic inside the flop and map the corruption all the way to the chip output pin.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114976429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The Impact of Ambient Humidity on the Surface Conductance of SiNx Films for Application in Capacitive MEMS Switches 环境湿度对用于电容式MEMS开关的SiNx薄膜表面电导的影响

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0337

D. Birmpiliotis, G. Papaioannou

引用次数: 1

Case Study on Sample Preparation Method to Eliminate the Artifact for Auger Analysis on Bond Pad 结合垫螺旋钻分析中消除伪影的样品制备方法实例研究

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0422

Hemalatha Somu

{"title":"Case Study on Sample Preparation Method to Eliminate the Artifact for Auger Analysis on Bond Pad","authors":"Hemalatha Somu","doi":"10.31399/asm.cp.istfa2022p0422","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0422","url":null,"abstract":"\u0000 In today’s advanced technology world, electronic devices are playing a key role in modern semiconductor products to improve the energy proficiency. These devices are required to be contamination free especially on the bond pad with good adhesion before wire bonding process at the back end. Contamination on the bond pad leads to reliability issues such as pad corrosion, delamination and failure leading to leakage and open fails of electronic devices. Therefore, detection accuracy and sensibility of contamination is important. Auger analysis is the most suitable technique to check bond pad contamination. Auger electron spectroscopy has the capability of analyzing compositional information with excellent spatial resolution. However, charging, noise or artifact is known to be a major concern to the characterization of insulating materials. This paper outlines the strategy that has been utilized to minimize the artifact, noise or charging impact for Auger investigation on a smaller bond pad surrounded by imide passivation layers. The imide passivation layer normally causes the charging effect during Auger analysis, which makes the Auger analysis difficult to be proceed. In addition to that, the charging effect leads to inaccurate analysis. In this paper, we demonstrate a sample preparation method to minimize the charging and artifact of Auger analysis especially for small bond pads.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117099971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Retention Failure by Bulk Trap in DRAM DRAM中Bulk Trap导致的保留失效分析

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0362

D.H. Han, Hoonchang Yang, Jinyeong Hwang, Jinseon Kim, K. Cho, Incheol Nam, D. Kim, Beomseop Lee, Sungsoo Yim, Hee-Il Hong, Jooyoung Lee

引用次数: 0

Flip-Chip and Backside Techniques (2022 Update) 倒装芯片和背面技术(2022年更新)

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022tpg1

E. I. Cole, K. Fishgrab, D. Barton, K. Bernhard-Höfer

引用次数: 0

Improved Failure Analysis Success Rate & Efficiency Through Readiness & Smart Solutions for Bench Testing & Fault Localization 通过台架测试和故障定位的准备和智能解决方案提高故障分析的成功率和效率

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0100

R. Kabadi, Leandro Muela

引用次数: 0

Leveraging the Power of Arduino to Elevate the Failure Analysis Lab 利用Arduino的力量提升故障分析实验室

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022tpo1

Tim Watson

引用次数: 0

Impact of PFIB Gas Assisted Delayering on MOSFET Degradation PFIB气体辅助脱层对MOSFET降解的影响

International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0284

Zvika Sapir, Oksana Dimnich, Avraham Raz

{"title":"Impact of PFIB Gas Assisted Delayering on MOSFET Degradation","authors":"Zvika Sapir, Oksana Dimnich, Avraham Raz","doi":"10.31399/asm.cp.istfa2022p0284","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0284","url":null,"abstract":"\u0000 Delayering is an essential sample preparation step in physical failure analysis (PFA) of integrated circuits (IC). During delayering it is crucial to precisely control the endpoint and uniformity of the region of interest (ROI). Furthermore, to perform SEM based nanoprobing it is also required to end the delayering process without residues on the surface that will reduce conductivity of, or induce shorts between, isolated contacts. Delayering via mechanical polishing has been the main approach for PFA and nanoprobing. However, as the shrinkage of the interconnect layer thickness reduced below 100 nm, it has become very challenging to control the polish endpoint and to achieve robustly controlled process. Recently gas assisted Xe+ Plasma FIB (PFIB) has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. The purpose of this study is to analyze the PFIB ion beam interaction with MOSFET devices, addressing ion beam damage related device degradation. We explored the final surface treatment required for nanoprobing and the impact on MOSFETs. For this purpose, we monitored device parameters after PFIB delayering final steps with different beam conditions and compare PFIB prepared samples to polished prepared samples. Consequently, we summarize the considerations of parameters for ion beam on final surface treatment.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122509243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1