International Symposium for Testing and Failure Analysis最新文献

筛选
英文 中文
Application of Plasma Focused Ion Beam Technique in Advanced Technology Nodes 等离子体聚焦离子束技术在先进技术节点中的应用
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0092
Liangshan Chen, Amado Longoria, Gina Cha, Gilbert Tovar, Elena Ramirez, Pingan Fang, Yong Liu, Andres Torres, Marco Alcantara, C. Penley
{"title":"Application of Plasma Focused Ion Beam Technique in Advanced Technology Nodes","authors":"Liangshan Chen, Amado Longoria, Gina Cha, Gilbert Tovar, Elena Ramirez, Pingan Fang, Yong Liu, Andres Torres, Marco Alcantara, C. Penley","doi":"10.31399/asm.cp.istfa2022p0092","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0092","url":null,"abstract":"\u0000 This paper reports the novel application of Plasma Focused Ion Beam (pFIB) to reveal subtle defects in advanced technology nodes. Two case studies presented, both of which alter the standard work procedure in order to find the defects. The first case highlights the precise milling capability of pFIB in discovering the metal buried via void that is easy-to-miss by standard failure analysis (FA) practice. The second utilizes pFIB circuit edit process to facilitate electrical isolation in pinpointing the exact failure location and thus enables identifying the defect more efficiently.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123566352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transmission Electron Microscopy (TEM) Techniques for Semiconductor Failure Analysis 半导体失效分析的透射电子显微镜技术
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022tpl1
Sam Subramanian, K. Ly, Tony Chrastecky
{"title":"Transmission Electron Microscopy (TEM) Techniques for Semiconductor Failure Analysis","authors":"Sam Subramanian, K. Ly, Tony Chrastecky","doi":"10.31399/asm.cp.istfa2022tpl1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022tpl1","url":null,"abstract":"\u0000 This presentation shows how transmission electron microscopy (TEM) is used in semiconductor failure analysis to locate and identify defects based on their physical and elemental characteristics. It covers sample preparation methods for planar, cross-sectional, and elemental analysis, reviews the capabilities of different illumination and imaging modes, and shows how beam-specimen interactions are employed in energy dispersive (EDS) and electron energy loss spectroscopy (EELS). It describes the various ways transmission electron microscopes can be configured for elemental analysis and mapping and reviews the advantages of scanning TEM (STEM) approaches. It also provides an introduction to energy-filtered TEM (EFTEM) and how it compares with other TEM imaging techniques.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125263408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Multi-Protocol Module To Provide An External Trigger For Dynamic Lock-In Thermography 为动态锁定热成像提供外部触发的多协议模块
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0333
R. Bienek
{"title":"A Multi-Protocol Module To Provide An External Trigger For Dynamic Lock-In Thermography","authors":"R. Bienek","doi":"10.31399/asm.cp.istfa2022p0333","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0333","url":null,"abstract":"\u0000 Lock-in thermography (LIT) is a firmly established and powerful technique for IC defect localization. The standard approach is to detect and analyze the device temperature fluctuation between two bias conditions using an infrared thermal imaging camera and check for any anomalous heat response. For the most straightforward setup, these bias conditions would be achieved by the modulation of a supply voltage provided by the LIT system. This allows for synchronization to the internal camera frame rate. In addition to this method, the ability to provide an external trigger may be an option, as it is for the ELITE system by Thermo Fisher Scientific. This expands the LIT arena to failures that may only be observable by, for example, setting different register contents at a constant supply voltage. Though IC testers can be used to provide the stimulus and a trigger signal for these situations, often a simpler, more compact solution would be beneficial for the failure analyst. This paper presents such an alternative: the application of a low-cost, USB-based module which can emulate various communication protocols (for example, I2C, SPI) while providing a synchronized timing pulse to externally trigger the ELITE, thus facilitating dynamic LIT investigations. The efficacy of this solution is demonstrated by a case study in which dynamic LIT produced a single hot spot at the defect site that was undetected by the voltage modulation approach.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125299340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Applications of PVC and Progressive FIB Milling in Identifying Top-Down Invisible Defect on Advanced Nodes SRAM Devices 聚氯乙烯和渐进FIB铣削在先进节点SRAM器件自顶向下隐形缺陷识别中的应用
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0347
Wiwy Wudjud, Chan Dang, Kah Chin Cheong, Gregory B. Collins, C. Penley
{"title":"Applications of PVC and Progressive FIB Milling in Identifying Top-Down Invisible Defect on Advanced Nodes SRAM Devices","authors":"Wiwy Wudjud, Chan Dang, Kah Chin Cheong, Gregory B. Collins, C. Penley","doi":"10.31399/asm.cp.istfa2022p0347","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0347","url":null,"abstract":"\u0000 Passive voltage contrast (PVC) is a well-known fault isolation technique in differentiating contrast at via/metal/contact levels while focused ion beam (FIB) is a destructive technique specifically used for cross sectioning once a defect is identified. In this study, we highlight a combination technique of PVC and progressive FIB milling on advanced node fin field-effect transistor (FinFET) for root cause analysis. This combo technique is useful when applied on high-density static random access memory (SRAM) structure, especially when it is difficult to view the defect from top-down inspection. In this paper, we create a FA flow chart and FIB deposition/milling recipe for SRAM failure and successfully apply them to three case studies.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127028765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Approach in Physical Failure Analysis Based on 3D Reconstruction 基于三维重构的物理失效分析新方法
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0201
D. Mello, Giuseppe Sciuto, M. Astuto, M. F. Santangelo, H. Stegmann, F. Cognigni, Marco Rossi
{"title":"New Approach in Physical Failure Analysis Based on 3D Reconstruction","authors":"D. Mello, Giuseppe Sciuto, M. Astuto, M. F. Santangelo, H. Stegmann, F. Cognigni, Marco Rossi","doi":"10.31399/asm.cp.istfa2022p0201","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0201","url":null,"abstract":"\u0000 In this work we present a new approach in physical failure analysis. Fault isolation can be done using volume diagnosis techniques. But when studying the identified defect sites by Focused Ion Beam (FIB) cross-sectioning, correct interpretation of the cross-sectional views strongly relies on choosing an appropriate cutting strategy. However, volume diagnosis techniques do not provide any information on which cutting directions and settings to choose to avoid misinterpretation of the spatial evolution of the defects. The proposed approach is to acquire FIB-SEM tomographic datasets at the defect sites to unequivocally characterize the defects in three-dimensional visualizations, independent of particular cross-sectioning strategies. In this specific case we have applied the methodology at a microcontroller for automotive applications on which a couple of floating VIAS were found. Thanks to the complete information obtained with the tomography, the defect could be assigned to a specific class of etching tools, and the root cause thus be solved.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115112388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-Ray Device Alteration Using a Scanning X-Ray Microscope 使用扫描x射线显微镜改变x射线设备
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0153
W. Lo, Pankaj Gupta, Rakshith Venkatesh, R. Schlangen, H. Marks, B. Cory, Frances Su, Benjamin Stripe, S. Lewis, W. Yun
{"title":"X-Ray Device Alteration Using a Scanning X-Ray Microscope","authors":"W. Lo, Pankaj Gupta, Rakshith Venkatesh, R. Schlangen, H. Marks, B. Cory, Frances Su, Benjamin Stripe, S. Lewis, W. Yun","doi":"10.31399/asm.cp.istfa2022p0153","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0153","url":null,"abstract":"\u0000 Near Infra-Red (NIR) techniques such as Laser Voltage Probing/Imaging (LVP/I), Dynamic Laser Stimulation (DLS), and Photon Emission Microscopy (PEM) are indispensable for Electrical Fault Isolation/Electrical Failure Analysis (EFI/EFA) of silicon Integrated Circuit (IC) devices. However, upcoming IC architectures based on Buried Power Rails (BPR) with Backside Power Delivery (BPD) networks will greatly reduce the usefulness of these techniques due to the presence of NIR-opaque layers that block access to the transistor active layer. Alternative techniques capable of penetrating these opaque layers are therefore of great interest. Recent developments in intense, focused X-ray microbeams for micro X-Ray Fluorescence (μXRF) microscopy open the possibility to using X-rays for targeted and intentional device alteration. In this paper, we will present results from our preliminary investigations into X-ray Device Alteration (XDA) of flip-chip packaged FinFET devices and discuss some implications of our findings for EFI/EFA.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122460265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complementary Fault Isolation Procedures Combining Laser Voltage Probing/Imaging and Lock-In Thermography—Case Studies 互补故障隔离程序结合激光电压探测/成像和锁定热成像-案例研究
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0369
Sukho Lee, M. van Veenhuizen
{"title":"Complementary Fault Isolation Procedures Combining Laser Voltage Probing/Imaging and Lock-In Thermography—Case Studies","authors":"Sukho Lee, M. van Veenhuizen","doi":"10.31399/asm.cp.istfa2022p0369","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0369","url":null,"abstract":"\u0000 Failure analysis engineers apply a combination of conventional static fault isolation tools such as OBIRCH, PEM, or lock-in thermography (LIT) to detect simple short defects. However, if the defect is located in a complex circuit, analysis can be more challenging. Laser voltage probing and imaging (LVx) is widely used but will have difficulty in localizing a defect in the backend layers. The combination of LVx and LIT can resolve complex short cases that either of these techniques alone cannot easily do. This paper introduces the thermal effect of LVx and applications of LIT for functional analysis, and it describes and provides case histories for complementary fault isolation procedures for detecting defects in metal layers and transistors.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129670642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrosion Mechanisms of Copper and Gold Ball Bonds 铜和金球键的腐蚀机理
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0310
W. Qin
{"title":"Corrosion Mechanisms of Copper and Gold Ball Bonds","authors":"W. Qin","doi":"10.31399/asm.cp.istfa2022p0310","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0310","url":null,"abstract":"\u0000 Copper ball bonding is the most widely used interconnection method in microelectronic packages. It has enabled many modern technologies, but the bond can fail due to corrosion. This paper concerns quantitative analyses of corrosion products of passing and failing copper ball bonds, and correlation with the corrosion thermodynamics. The role each element in the aluminum-copper intermetallic compound plays during crevice corrosion is described, and relative abundances of the oxidized elements are estimated. New insights regarding mechanisms of the highest vulnerability to corrosion attack in the thin film-stack across the bond are presented. Limited data indicate the same corrosion mechanisms for Au ball bonds.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124238780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SPILL—Security Properties and Machine-Learning Assisted Pre-Silicon Laser Fault Injection Assessment 泄漏安全特性和机器学习辅助的预硅激光故障注入评估
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0225
Nitin Pundir, Henian Li, Lang Lin, N. Chang, Farimah Farahmandi, M. Tehranipoor
{"title":"SPILL—Security Properties and Machine-Learning Assisted Pre-Silicon Laser Fault Injection Assessment","authors":"Nitin Pundir, Henian Li, Lang Lin, N. Chang, Farimah Farahmandi, M. Tehranipoor","doi":"10.31399/asm.cp.istfa2022p0225","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0225","url":null,"abstract":"\u0000 Laser-based fault injection (LFI) attacks are powerful physical attacks with high precision and controllability. Therefore, attempts have been in the literature to model and simulate the laser effect in pre-silicon digital designs. However, these efforts can only model the laser effect on small SPICE or TCAD circuits of individual standard cells. This paper proposes security properties and a machine-learning assisted layout signoff framework in verifying the full-chip layout's resiliency against LFI. In the framework, we leveraged the commercial SoC power integrity sign-off tool to inject the Gaussian laser current to any spot in the layout, by considering different layout features such as power distribution network, decoupling capacitor placement, metal geometry, instance switching power, etc. To avoid exhaustive analysis of all layout spots regardless of LFI criticality, we use security properties to drive the assessment and identify critical areas. We then use SPICE simulations and machine learning to develop cell-level laser fault models under different laser-induced transient current intensities. This laser cell library is used during full-chip LFI feasibility analysis for the cells inside laser illumination, enabling precise layout -level design fix for critical cells failing the fault injection threshold. Finally, we show the effectiveness of the proposed framework by analyzing the fully implemented AES design layout.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127781551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Yield Basics for Failure Analysts (2022 Update) 失效分析的良率基础(2022年更新)
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022tpa1
D. Albert, Tracy A. Meyers
{"title":"Yield Basics for Failure Analysts (2022 Update)","authors":"D. Albert, Tracy A. Meyers","doi":"10.31399/asm.cp.istfa2022tpa1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022tpa1","url":null,"abstract":"\u0000 This presentation provides an overview of the terminology and concepts associated with semiconductor yield analysis, modeling, and improvement techniques. It compares and contrasts yield models and describes the steps and equipment involved in setting up yield engineering programs targeting specific failures and defects. It also includes case histories showing how different yield analysis models have been used to identify the root cause of random and systematic failures.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126214518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信