Complementary Fault Isolation Procedures Combining Laser Voltage Probing/Imaging and Lock-In Thermography—Case Studies

Sukho Lee, M. van Veenhuizen
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Abstract

Failure analysis engineers apply a combination of conventional static fault isolation tools such as OBIRCH, PEM, or lock-in thermography (LIT) to detect simple short defects. However, if the defect is located in a complex circuit, analysis can be more challenging. Laser voltage probing and imaging (LVx) is widely used but will have difficulty in localizing a defect in the backend layers. The combination of LVx and LIT can resolve complex short cases that either of these techniques alone cannot easily do. This paper introduces the thermal effect of LVx and applications of LIT for functional analysis, and it describes and provides case histories for complementary fault isolation procedures for detecting defects in metal layers and transistors.
互补故障隔离程序结合激光电压探测/成像和锁定热成像-案例研究
故障分析工程师结合使用传统的静态故障隔离工具,如OBIRCH、PEM或锁定热成像(LIT)来检测简单的短缺陷。然而,如果缺陷位于复杂的电路中,则分析可能更具挑战性。激光电压探测和成像(LVx)是一种广泛应用的技术,但在后端层的缺陷定位方面存在困难。LVx和LIT的结合可以解决复杂的短期情况,这是单独使用这两种技术都无法轻松解决的。本文介绍了LVx的热效应和LIT在功能分析中的应用,描述并提供了用于检测金属层和晶体管缺陷的互补故障隔离程序的案例历史。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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