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International Symposium for Testing and Failure Analysis最新文献

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3D Power Module Packages—Failure Analysis Challenges & How to Overcome Them 3D电源模块封装-故障分析挑战&如何克服它们
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0001
Mirza Imran Baig
{"title":"3D Power Module Packages—Failure Analysis Challenges & How to Overcome Them","authors":"Mirza Imran Baig","doi":"10.31399/asm.cp.istfa2022p0001","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0001","url":null,"abstract":"\u0000 3D package technologies like Multi-Chip Modules (MCM) and System in Package (SIP) have been in the semiconductor package industry for some time now. At the advent these technologies were mostly incorporated for digital solutions, however more recently these packaged solutions have been increasingly used for analog technologies specifically for power applications. With these packaged innovations increasingly adapted, Failure Analysis (FA) takes a central stage not just in supporting customer returned devices but also in root cause investigations leading to new product development, qualifications and ramp to market. These 3D heterogeneous packages however pose multiple newer challenges to FA compared to traditional single chip package solutions. This paper presents some of these Failure Analysis challenges encountered most commonly on analog 3D power modules and talks about possible solutions to overcome them with case studies. Further it also addresses solution that will require FA to think and adapt improved tool sets whether it’s newer solutions that market has to offer or modification to existing approach including chemical recipes, decapsulation methods, etc. to navigate these intricate packages.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124153435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Die Level Traceability as an Essential Tool in Failure Analysis and the Road to Zero Defects 模具级可追溯性是失效分析和零缺陷之路的重要工具
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0405
Jon Carlo P. Salimbangon, Rommel Estores
{"title":"Die Level Traceability as an Essential Tool in Failure Analysis and the Road to Zero Defects","authors":"Jon Carlo P. Salimbangon, Rommel Estores","doi":"10.31399/asm.cp.istfa2022p0405","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0405","url":null,"abstract":"The success of failure analysis and related investigations rely on the quality of information made available to the investigating team. When die level traceability (DLT) is implemented on the product, the actual location of a particular unit in the wafer and all the available data can be traced back and pieced together to reveal insights on the possible root cause( s). The data for the specific unit can be determined, then analyzed and compared with the lot distribution to check for any information that could help the analyses and investigations. With access to the original data, a failing unit can be investigated to determine which data have changed which can prove essential to the direction of failure analysis approach. Four case studies will be discussed to demonstrate how DLT enabled fast, accurate and detailed root-cause identification leading to effective corrective and preventive actions.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"22 21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126149769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chlorine and Sulfur Effects on Gold-Aluminum Wire Bond Reliability 氯和硫对金-铝线键合可靠性的影响
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0374
L. Liao, Xi Zhang, Younan Hua, Li Xiaomin
{"title":"Chlorine and Sulfur Effects on Gold-Aluminum Wire Bond Reliability","authors":"L. Liao, Xi Zhang, Younan Hua, Li Xiaomin","doi":"10.31399/asm.cp.istfa2022p0374","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0374","url":null,"abstract":"\u0000 Currently, wire bonding is still the dominant interconnection mode in microelectronic packaging, and epoxy molding compound (EMC) is the major encapsulant material. Normally EMC contains chlorine (Cl) and sulfur (S) ions. It is important to understand the control limit of Cl and S in the EMC to ensure good Au wire bond reliability. This paper discussed the influences of Cl and S on the Au wire bond. Different contents of Cl and S were purposely added into the EMC. Accelerated reliability tests were performed to understand the effects of Cl, S and their contents on the Au wire bond reliability. Failure analysis has been conducted to study the failure mechanism. It is found that Cl reacted with IMCs under humid environment. Cl also caused wire bond failure in HTS test without moisture. On the other hand, the results showed that S was not a corrosive ion. It was also not a catalyst to the Au bond corrosion. Whilst, high content of S remain on the bond pad hindered the IMCs formation and caused earlier failure of the wire bond.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130024825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Charged Particle Systems—Fundamentals and Opportunities (2022 Update) 带电粒子系统-基本原理和机会(2022年更新)
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022tpn1
E. Principe
{"title":"Charged Particle Systems—Fundamentals and Opportunities (2022 Update)","authors":"E. Principe","doi":"10.31399/asm.cp.istfa2022tpn1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022tpn1","url":null,"abstract":"\u0000 This presentation covers ion beam analytical tools, their capabilities, and uses. It provides an overview of ion sources, examines emerging trends in surface analysis, and assesses the potential of ultrafast lasers for panoscopic patterning, athermal ablation, and elemental analysis. It compares and contrasts liquid metal, gas field, and plasma sources and presents examples highlighting the capabilities of FIB-SIMS and FIB-SEM Auger/XPS surface analysis techniques. It also introduces computationally guided microspectroscopy (CGM) and assesses its potential impact on multi-variant analysis, point spread deconvolution, and compressed sensing.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130268037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strategies to Identify Physical Origin of Contrast in EBIRCH 鉴别EBIRCH生理造影剂来源的策略
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0277
G. Moldovan, William Courbat
{"title":"Strategies to Identify Physical Origin of Contrast in EBIRCH","authors":"G. Moldovan, William Courbat","doi":"10.31399/asm.cp.istfa2022p0277","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0277","url":null,"abstract":"\u0000 The Electron Beam Induced Resistance Change (EBIRCH) technique is becoming more popular for localization of defects in Electrical Failure Analysis (EFA). Whilst EBIRCH is clear and straightforward in the procedure that must be followed for localization, it does not provide a direct understanding of the fundamental origin of its signal. This contribution addresses this significant shortfall in the technique, proposing a few basic experimental steps to be added to the technique in continuation of localization, with the principal aim of interrogating the physical origin of signal.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129587697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Overcoming Challenging Failure Analysis Sample Types on a Single IR/Raman Platform! 在单个红外/拉曼平台上克服具有挑战性的失效分析样品类型!
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0237
Jay Anderson, M. Lo, E. Dillon, M. Kansiz
{"title":"Overcoming Challenging Failure Analysis Sample Types on a Single IR/Raman Platform!","authors":"Jay Anderson, M. Lo, E. Dillon, M. Kansiz","doi":"10.31399/asm.cp.istfa2022p0237","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0237","url":null,"abstract":"\u0000 This paper describes a new infrared (IR) technique that offers sub-micron spatial resolution with a pump-probe scheme that can offer simultaneous collection of IR and Raman spectra at the same spatial resolution. The technique uses a single beam to collect both IR and Raman spectra using a technique called Optical Photothermal Infrared (O-PTIR). The O-PTIR technique provides constant spatial resolution over the entire mid-IR range due to the use of a fixed wavelength probe beam at 532 nm. The paper provides examples that highlight the advantages of the novel technique for addressing challenges that are commonly observed in the failure and contamination analysis community.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115790860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Environmental X-Ray Computed Tomography (E-CT)—3D CT at Elevated to Cryogenic Temperatures 环境x射线计算机断层扫描(E-CT) -低温下的3d CT
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0163
Thomas Sanders, John Bescup, S. Avasapian, Gil Garteiz, Ryan Ross
{"title":"Environmental X-Ray Computed Tomography (E-CT)—3D CT at Elevated to Cryogenic Temperatures","authors":"Thomas Sanders, John Bescup, S. Avasapian, Gil Garteiz, Ryan Ross","doi":"10.31399/asm.cp.istfa2022p0163","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0163","url":null,"abstract":"\u0000 While 2.5D and 3D solutions continue to drive advancements in the electronics packaging industry, challenges persist with their reliability and qualification. In this paper, we introduce a new technique that may prove valuable for nondestructive, in-situ measurements of package and die warpage. This system allows for the powerful visualization tools of Computed Tomography to be applied to samples at elevated and cryogenic temperatures over a broad temperature range (+125C to -257C).","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121174496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Low-Voltage Limits of Lithium-Ion Batteries—Overdischarge and Degradation from a Safety Perspective 锂离子电池的低压极限——从安全角度看过放电和退化
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0047
Adam P. Cohn, T. A. Hayes, Jonathon R. Harding, Q. Horn
{"title":"The Low-Voltage Limits of Lithium-Ion Batteries—Overdischarge and Degradation from a Safety Perspective","authors":"Adam P. Cohn, T. A. Hayes, Jonathon R. Harding, Q. Horn","doi":"10.31399/asm.cp.istfa2022p0047","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0047","url":null,"abstract":"\u0000 Despite modern battery management systems, rechargeable lithium-ion batteries can be subjected to varying levels of overdischarge during transport, storage and use in the field. While the general degradation risks associated with overdischarge are well documented, there are not widely accepted cell voltages at which the onset of such degradation processes occur. In this work, reference electrode testing is performed to study a variety of commercial lithium-ion cells during varying levels of overdischarge. Common trends between different types of lithium-ion cells are first identified, and the resulting implications are discussed.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122272462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First Approach of Fault Isolation using Green Laser on 4H-SiC Power Device 绿色激光在4H-SiC功率器件上的第一种故障隔离方法
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0097
Pierpaolo Barbarino, Giuseppe Anastasi, M. Astuto, D. Mello
{"title":"First Approach of Fault Isolation using Green Laser on 4H-SiC Power Device","authors":"Pierpaolo Barbarino, Giuseppe Anastasi, M. Astuto, D. Mello","doi":"10.31399/asm.cp.istfa2022p0097","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0097","url":null,"abstract":"\u0000 In this work we have investigated the results obtained using fault isolation techniques such as EMMI, OBIRCH and OBIC on a Wide band gap power device and in particular a 4H-SiC. We used YLF laser and Green Laser and showed the differences in the resulting hot spots. In the selected point, FIB cross sectioning and EDS analysis was performed. Once that the defect was shown, the differences the fault isolation results were discussed.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116438811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Building a Better Lab Space for High-Tech Imaging/Processing Tools 为高科技成像/处理工具建立更好的实验室空间
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0240
Steven B. Herschbein, C. Hartfield, Michael Wong, J. Kevek
{"title":"Building a Better Lab Space for High-Tech Imaging/Processing Tools","authors":"Steven B. Herschbein, C. Hartfield, Michael Wong, J. Kevek","doi":"10.31399/asm.cp.istfa2022p0240","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0240","url":null,"abstract":"\u0000 The design and construction of a well-executed laboratory space to house high resolution analytical imaging and processing tools can often be more complex and expensive than anticipated. Unlike their manufacturing counterparts, lab tools as a class have fewer built-in countermeasures to fend off operational degradation caused by external factors. A poorly optimized facility can result in significant underperformance of installed systems, thereby wasting the investment and jeopardizing the mission. Unfortunately, very few assigned laboratory spaces are ‘naturally’ perfect for the installation of new analytical equipment at the outset. It typically takes considerable work to engineer most locations so that the tools function as they should and live up to expectations. The magnitude of the challenge and its true cost and lead time often come as a huge surprise to failure analysis engineers tasked with wearing multiple ‘hats’ while navigating the capital approval process. Being caught off guard in this manner often results in considerable time delay, as well as over-budget or sub-par outcomes. In this paper we offer suggestions on how to revamp the typical capital cycle process for specifying, buying, and installing future laboratory tools. We furthermore aim to produce an abbreviated reference guide for tool owners on facility requirements needed to ensure optimal analytical system performance.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126597771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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