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Failure Analysis Engineering of Semiconductor Lasers 半导体激光器失效分析工程“，
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0065
I. Kearney
{"title":"Failure Analysis Engineering of Semiconductor Lasers","authors":"I. Kearney","doi":"10.31399/asm.cp.istfa2022p0065","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0065","url":null,"abstract":"\u0000 High-power, diode pump laser modules with improved 0.25% antireflective (AR) coating exhibited low (weak) or zero (dead) power emitters after 1000+ hours life-test. Catastrophic optical mirror damage (COMD) was suspected due to a facet coating upgrade but was not physically observed. Electroluminescence ‘fingerprinting’ lent to a contradictory catastrophic bulk damage (COBD) failure mechanism. The Customer wished to clearly understand how an AR coating change caused COBD and not COMD. This paper emphasizes how the astute failure analyst must remain a ‘conscious observer’ deploying concerted analysis steps to truly unmask root-cause amidst conflicted stakeholders.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129173138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning Reinforced Acoustic Signal Analysis for Enhancing Non-Destructive Defect Localization and Reliable Identification 机器学习增强声信号分析增强无损缺陷定位和可靠识别
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0012
S. Brand, M. Kögel, F. Altmann, C. Hollerith, Pascal Gounet
{"title":"Machine Learning Reinforced Acoustic Signal Analysis for Enhancing Non-Destructive Defect Localization and Reliable Identification","authors":"S. Brand, M. Kögel, F. Altmann, C. Hollerith, Pascal Gounet","doi":"10.31399/asm.cp.istfa2022p0012","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0012","url":null,"abstract":"\u0000 The paper presents the approach of enhancing time-domain signal analysis using machine learning techniques for analyzing acoustic echo signals and the subsequent derivation of condition-related class assignments for failure analysis. The examples provided here include two types of flip-chips with defects intentionally induced by thermal stressing. Besides investigating the general applicability and the benefit of the approach the current study also investigated the applicability of different deep learning model-architectures and compared their performances, accuracies, and robustness with respect to external impacts such as noise, jitter or physical defocusing. For independent verification selected defects which have either been identified by an experienced operator or the ML algorithm or both, have been further analyzed and validated by FIB/SEM cross sectional analysis.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114921350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Resolution Conductivity Mapping with STEM EBIC 利用STEM EBIC进行高分辨率电导率测绘
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0251
W. Hubbard, H. Chan, B. Regan
{"title":"High-Resolution Conductivity Mapping with STEM EBIC","authors":"W. Hubbard, H. Chan, B. Regan","doi":"10.31399/asm.cp.istfa2022p0251","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0251","url":null,"abstract":"\u0000 Modern electronic systems rely on components with nanometer-scale feature sizes in which failure can be initiated by atomic-scale electronic defects. These defects can precipitate dramatic structural changes at much larger length scales, entirely obscuring the origin of such an event. The transmission electron microscope (TEM) is among the few imaging systems for which atomic-resolution imaging is easily accessible, making it a workhorse tool for performing failure analysis on nanoscale systems. When equipped with spectroscopic attachments TEM excels at determining a sample’s structure and composition, but the physical manifestation of defects can often be extremely subtle compared to their effect on electronic structure. Scanning TEM electron beam-induced current (STEM EBIC) imaging generates contrast directly related to electronic structure as a complement the physical information provided by standard TEM techniques. Recent STEM EBIC advances have enabled access to a variety of new types of electronic and thermal contrast at high resolution, including conductivity mapping. Here we discuss the STEM EBIC conductivity contrast mechanism and demonstrate its ability to map electronic transport in both failed and pristine devices.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127661806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Develop a Time Efficient Method to Enhance the FIB Process on Die Backside Metallization (BSM) Analysis 开发一种时间效率高的方法来提高模具背面金属化(BSM)分析的FIB过程
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0196
Lo Chea Wee, T. S. Yee, Alice Ong
{"title":"Develop a Time Efficient Method to Enhance the FIB Process on Die Backside Metallization (BSM) Analysis","authors":"Lo Chea Wee, T. S. Yee, Alice Ong","doi":"10.31399/asm.cp.istfa2022p0196","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0196","url":null,"abstract":"\u0000 Nowadays, semiconductor components are widely used in home electronic appliances, vehicles, industrial motor controls and beyond. The performance and reliability of these components are becoming more crucial and critical. Generally, a semiconductor component consists of lead frames, wires, dies and die attaches. Within the die, the die backside metallization, also known as “BSM,” plays an important role in electronic component manufacturing. The BSM is a layer that promotes good adhesion, electrical properties and long-term stability as a conductive pathway to the circuits. As such, the inspection on BSM is needed to ensure robustness. Several conventional methods have been developed to analyze the die backside metallization. In this paper, we will discuss the inspection on backside metallization and comparison among five sample preparation methods: mechanical cross section with ion milling, mechanical cross section with FIB cleaning, die frontside decapsulation with FIB cut from die surface and FIB cut from die sidewall, and component frontside lapping with FIB from the remaining silicon. Result comparison will be discussed in case studies and the advantages and disadvantages of the five methods will be compared.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121220278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrostatic Discharge (ESD) Damage of Nanoprobes and How to Prevent It 纳米探针的静电放电损伤及其预防方法
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0329
N. Anderson, S. Lockledge
{"title":"Electrostatic Discharge (ESD) Damage of Nanoprobes and How to Prevent It","authors":"N. Anderson, S. Lockledge","doi":"10.31399/asm.cp.istfa2022p0329","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0329","url":null,"abstract":"\u0000 Electrostatic discharge (ESD) can easily damage the nanoprobes used in the failure analysis of semiconductor devices. Nanoprobes with tips that have radii of curvature of a few nanometers are especially sensitive to ESD damage, because applying even modest electrical potentials leads to high electrical fields at the tip of the sharp probe. ESD damage has been used as an umbrella explanation to explain a variety of probe failures and undesirable tip features, but due to the stochastic nature of these events, its effect on nanoprobes has hitherto not been well documented. This paper describes the effect that ESD events have on the tip profile of nanoprobes and describes best practices so that such events can be more readily diagnosed and prevented by nanoprobe users. The likelihood of an ESD event occurring can be reduced by eliminating potential differences between users and the probes and by regulating laboratory humidity levels.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116653482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emerging Nonvolatile Memories—An Assessment of Vulnerability to Probing Attacks 新兴的非易失性存储器——对探测攻击的脆弱性评估
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0217
L. K. Biswas, M. Shafkat, M. Khan, L. Lavdas, N. Asadizanjani
{"title":"Emerging Nonvolatile Memories—An Assessment of Vulnerability to Probing Attacks","authors":"L. K. Biswas, M. Shafkat, M. Khan, L. Lavdas, N. Asadizanjani","doi":"10.31399/asm.cp.istfa2022p0217","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0217","url":null,"abstract":"\u0000 Probing and imaging techniques that are conventionally used for failure analysis pose a major threat to the confidentiality and the integrity of data stored in non-volatile memory (NVM) cells integrated into a silicon chip. These techniques fall under the umbrella of physical attacks, which unlock tremendous capabilities for an attacker trying to access secret information stored in a target NVM. How vulnerable an NVM cell is to these attacks depends on device physics and the operational principles of the memory cell. The wide range of emerging NVM technologies opens new opportunities for attackers. Without significant attention to these emerging threats, confidential data stored in NVMs can get compromised without much effort, given access to advanced failure analysis tools. We aim to show how attackers can use their knowledge of how a memory device works to find out a suitable probing or imaging modality to extract the stored secret.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126046652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of Annealing Process Conditions to Reduce Gate Induced Drain Leakage Current in Buried-Gate FETs 降低埋栅场效应管栅感应漏极漏电流的退火工艺条件优化
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0411
Youmin Kim, Donghbin Kim, Byoungdeog Choi
{"title":"Optimization of Annealing Process Conditions to Reduce Gate Induced Drain Leakage Current in Buried-Gate FETs","authors":"Youmin Kim, Donghbin Kim, Byoungdeog Choi","doi":"10.31399/asm.cp.istfa2022p0411","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0411","url":null,"abstract":"\u0000 As devices shrink, mitigating off-state power consumption has become a major concern for dynamic random access memory (DRAM) product development. The interface trap induced reduction of the retention time of DRAM cells has become increasingly critical due to aggressive device shrinkage. In this paper, the influence of reliability evaluation after device manufacturing on the number of interface traps in buried-channel-array-transistors and the optimal H2 annealing temperature were investigated for the reduction of trap-induced leakage currents that cause retention time degradation in DRAM cells. This study is expected to solve the problem of retention time and off-state power consumption caused by interface traps and to be utilized as a cornerstone for next-generation DRAM development.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125082038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Logic State PEM Analysis for ATPG SCAN Logic Failure ATPG扫描逻辑故障的PEM分析
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0352
Soon Woei Chong, Kan Sun, Wilson C. H. Lee, Rahul Babu Radhamony, Hao Hu, L. Endrinal
{"title":"Logic State PEM Analysis for ATPG SCAN Logic Failure","authors":"Soon Woei Chong, Kan Sun, Wilson C. H. Lee, Rahul Babu Radhamony, Hao Hu, L. Endrinal","doi":"10.31399/asm.cp.istfa2022p0352","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0352","url":null,"abstract":"\u0000 Photon Emission Microscopy (PEM) analysis is one of the most common used FA techniques to identify the root cause of failures within ATPG scan logic due to its ease of setup and less invasive nature. While conducting photon emissions, the device is made to operate in the fail mode by running a production test vector to look for anomalous emissions or hot spots that could narrow down the area of interest (AOI) for subsequent Physical Failure Analysis (PFA). However, if there is no clue from emission analysis in the case of a hard failure with no sensitivity to voltage, frequency, or temperature, FA debug will be challenging. This paper shows how PEM analysis success may be further improved through logic state circuit study using a DFT ATPG diagnostic platform. Logic state truth table and its relative test pattern will be built based on the diagnostic data using in-house scripts, and the test program can then be changed to the required condition of the circuitry. With the altered logic state, new emission data can be collected, which could potentially reveal new clues to the investigation.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130312944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic Localization Techniques (2022 Update) 光子定位技术(2022年更新)
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022tpd1
C. Boit
{"title":"Photonic Localization Techniques (2022 Update)","authors":"C. Boit","doi":"10.31399/asm.cp.istfa2022tpd1","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022tpd1","url":null,"abstract":"\u0000 This presentation provides an overview of photonic measurement techniques and their use in isolating faults and locating defects in ICs. It covers transmission, reflectance, and absorption methods, describing key interactions and important parameters and equations. Reflectance methods discussed include electro-optical probing (EOP), electro-optical frequency modulation (EOFM), and laser-voltage imaging (LVI). Absorption methods covered include those based on the absorption of light in semiconductors, as in optical beam induced current (OBIC), light-induced voltage alteration (LIVA), and laser-assisted device alteration (LADA), and those based on absorption in metals, as in thermally induced voltage alteration (TIVA), optical beam induced resistance change (OBIRCH), and thermoelectric voltage generation or Seebeck effect imaging (SEI). The presentation also covers thermoluminescence (lock-in thermography) and electroluminescence (photon emission) measurement methods and assesses hardware security risks posed by current and emerging photonic localization techniques.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130708893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning Methods for FEOL/MEOL Defects Measurement through SRAM Bitmap 基于SRAM位图的FEOL/MEOL缺陷测量的机器学习方法
International Symposium for Testing and Failure Analysis Pub Date : 2022-10-30 DOI: 10.31399/asm.cp.istfa2022p0043
Ningmu Nathan Zou, Adam Rose, Raymond Ting
{"title":"Machine Learning Methods for FEOL/MEOL Defects Measurement through SRAM Bitmap","authors":"Ningmu Nathan Zou, Adam Rose, Raymond Ting","doi":"10.31399/asm.cp.istfa2022p0043","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2022p0043","url":null,"abstract":"\u0000 This paper introduces the use of machine learning models in the characterization of bitmap fail patterns occurring on SRAM to identify FEOL/MEOL layers defectivity distribution. The results of bitmap patterns with test conditions are used for fault analysis post-processing and manufacturing yield improvement methodologies. Several machine learning models were built for prediction of the FEOL/MEOL layer defects based on hundreds of bitmap physical failure analysis results. A model utilizing a multilayer perceptron (MLP) architecture with backpropagation of error were optimized and it can be easily applied to volume products with millions of bitmap test results with >80% accuracy. It is the first time we are able to investigate the FEOL/MEOL defects density quantitatively through an automatic diagnosis tool.","PeriodicalId":417175,"journal":{"name":"International Symposium for Testing and Failure Analysis","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114767761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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