The 17th Annual SEMI/IEEE ASMC 2006 Conference最新文献_第7页

New methodology for ultra-fast detection and reduction of non-visual defects at the 90nm node and below using comprehensive e-test structure infrastructure and in-line DualBeamTM FIB 采用综合电子测试结构基础设施和在线DualBeamTM FIB，实现90纳米及以下节点超快速检测和减少非视觉缺陷的新方法

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638716

M. Schmidt, H.H. Kang, L. Dworkin, K. R. Harris, S.F. Lee

引用次数: 2

High and Hyper NA Immersion Lithography using Advanced Patterning Film APF TM 高和超NA浸入式光刻使用先进的图案膜APF TM

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638721

M. van der Reijden, M. O. de Beeck, E. Sleeckx, P. Jaenen, E. Kunnen, B. Degroote, W. Yeh, R. Schreutelkamp

引用次数: 0

Litho area cycle time reduction in an advanced 300mm semiconductor manufacturing line 减少先进300mm半导体生产线的光刻面积周期时间

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638734

J. P. van der Eerden, T. Saenger, W. Walbrick, H. Niesing, R. Schuurhuis

引用次数: 10

Experimental Evaluation of Second Harmonic Generation for Non-Invasive Contamination Detection in SOI Wafers SOI硅片无创污染检测中二次谐波产生的实验评价

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638714

M. Alles, R. Pasternak, N. Tolk, peixiong zhao, D. Fleetwood, R. Standley

引用次数: 6

Flash FEOL Edge Defectivity - Ultra Thin CoxSiy Fiber Defectivity Detection, Characterizations, Root Cause Identification and Fixes to Eliminate Failures at Sort Yield 闪光FEOL边缘缺陷-超薄同轴光纤缺陷检测，表征，根本原因识别和修复，以消除故障在分类产量

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638780

L. Presslev, M. Meyer, D. Sutton, M. Covert, C. Raeder, C. Foster, D. Price

{"title":"Flash FEOL Edge Defectivity - Ultra Thin CoxSiy Fiber Defectivity Detection, Characterizations, Root Cause Identification and Fixes to Eliminate Failures at Sort Yield","authors":"L. Presslev, M. Meyer, D. Sutton, M. Covert, C. Raeder, C. Foster, D. Price","doi":"10.1109/ASMC.2006.1638780","DOIUrl":"https://doi.org/10.1109/ASMC.2006.1638780","url":null,"abstract":"Front end of line (FEOL) defect detection of ultra thin, < 0.02 mum diameter, surface CoxSiy fiber killer defects bridging multiple CoSi2 gate features have typically been found to have capture rates of less than 1% for dark field and bright field defect detection tools. The edge die features of flash memory devices were found to be generating ultra thin Si Fiber/Stringer Killer defects that were undercut during a FEOL pre-clean operation, were converted to CoxSiy in the CoSi2 process operations, and subsequently caused electrical shorts to adjacent CoSi2 word lines thus inducing failures at sort yield testing. Using the KLA-Tencortrade voltage contrast detection tool, the eS31trade, and coupled with the uLooptrade methodology, we have demonstrated significantly higher capture rates inline and these improvements of inline detection ability allowed us to find the root cause of these Fiber/Stringer defects and implement permanent fixes for these Killer defects. Three FEOL processes were found to be interacting causing these Fiber/Stringer marginalities: STI CMP edge uniformity, gate photo patterning overlay (OL), and gate plasma etch. To permanently correct the issue, we utilized a silicon nitride film and we eliminated the CoxSFiber/Stringer defects. This paper discusses the inline detection improvements, characterization of FEOL processes contributing to the marginalities, and the process fixes for elimination of the defects that led towards improvement of sort yields","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129178884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Prognostic/Diagnostic Health Management System (PHM) for Fab Efficiency Fab效率的预后/诊断健康管理系统(PHM)

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638797

C. Sun, K. Nguyen, Long Vu, S. Bisland

引用次数: 8

Challenges and Methodology of Fab-to-fab CD-SEM Matching 晶圆厂间CD-SEM匹配的挑战与方法

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638758

Thomas Marschner, Uwe Kramer, K. Muehlstaedt, Alessandra Navarra, J. Moffitt, C. Stief, S. Ventola, D. Gscheidlen, U. Groh, T. Burroughs

{"title":"Challenges and Methodology of Fab-to-fab CD-SEM Matching","authors":"Thomas Marschner, Uwe Kramer, K. Muehlstaedt, Alessandra Navarra, J. Moffitt, C. Stief, S. Ventola, D. Gscheidlen, U. Groh, T. Burroughs","doi":"10.1109/ASMC.2006.1638758","DOIUrl":"https://doi.org/10.1109/ASMC.2006.1638758","url":null,"abstract":"This paper describes the results of experiments performed to proof the tool-to-tool matching status of two CD SEM systems located in different wafer fabs in Asia, Europe, Israel and the United States. The methodology for setting up tools within one fab to ensure the matching of the signal generation between the tools has been extended to set up tools located in different fabs. In a second step a new methodology was developed to proof the matching, defined as getting the same measurement result on all tools, in different fabs. The main problem was the change of the structures on the wafers used for matching proof caused by the shipment. After verifying that the change to be the same no matter where the two tools under test are located, the change could be treated as an additional systematic effect not affecting the matching proof any longer. It is shown that by extension of the existing methodologies and by including the correction for systematic effects due to wafer shipment a matching level of all tools around the world similar to the matching level of tools within one fab can be achieved","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122763241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Developing Project and Program Managers: A Blended Learning Approach 发展项目和项目经理:混合学习方法

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638782

T. A. Carbone

引用次数: 3

Metal Layer Monitoring in DRAM Production by use of Spectroscopic Ellipsometry-based Scatterometry 基于椭圆偏振散射法的DRAM生产中金属层监测

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638719

M. Wang, J. Chen, T. Cheng, C. Chang, T. Wang

引用次数: 3

Dielectric Engineering on Cell Capacitor for Advanced Trench DRAM 先进槽式DRAM电池电容的介电工程

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638763

Chien-Kang Kao, Chih-Ming Chang, Chia-Ming Kuo, Chun-Yao Wang, A. Ku

引用次数: 0