Chien-Kang Kao, Chih-Ming Chang, Chia-Ming Kuo, Chun-Yao Wang, A. Ku
{"title":"先进槽式DRAM电池电容的介电工程","authors":"Chien-Kang Kao, Chih-Ming Chang, Chia-Ming Kuo, Chun-Yao Wang, A. Ku","doi":"10.1109/ASMC.2006.1638763","DOIUrl":null,"url":null,"abstract":"In this paper, we discuss the cell capacitor characteristics via wafer acceptance test (WAT) and reliability test for advanced trench capacitor. Combination of N2O reoxidation and NH3 nitridation processes can improve leakage current and maintain the same level of cell capacitance. This obvious improvement is contributed from extra nitrogen incorporation in reoxidation surface and more oxygen incorporation in nitride layer, which modify the film structure of storage dielectrics. Based on secondary ion mass spectrometer (SIMS) and Fourier transform infrared (FTIR) analysis, we propose the band model to clarify the influence of reoxidation and nitridation processes on cell trench capacitor","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric Engineering on Cell Capacitor for Advanced Trench DRAM\",\"authors\":\"Chien-Kang Kao, Chih-Ming Chang, Chia-Ming Kuo, Chun-Yao Wang, A. Ku\",\"doi\":\"10.1109/ASMC.2006.1638763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we discuss the cell capacitor characteristics via wafer acceptance test (WAT) and reliability test for advanced trench capacitor. Combination of N2O reoxidation and NH3 nitridation processes can improve leakage current and maintain the same level of cell capacitance. This obvious improvement is contributed from extra nitrogen incorporation in reoxidation surface and more oxygen incorporation in nitride layer, which modify the film structure of storage dielectrics. Based on secondary ion mass spectrometer (SIMS) and Fourier transform infrared (FTIR) analysis, we propose the band model to clarify the influence of reoxidation and nitridation processes on cell trench capacitor\",\"PeriodicalId\":407645,\"journal\":{\"name\":\"The 17th Annual SEMI/IEEE ASMC 2006 Conference\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 17th Annual SEMI/IEEE ASMC 2006 Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.2006.1638763\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2006.1638763","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dielectric Engineering on Cell Capacitor for Advanced Trench DRAM
In this paper, we discuss the cell capacitor characteristics via wafer acceptance test (WAT) and reliability test for advanced trench capacitor. Combination of N2O reoxidation and NH3 nitridation processes can improve leakage current and maintain the same level of cell capacitance. This obvious improvement is contributed from extra nitrogen incorporation in reoxidation surface and more oxygen incorporation in nitride layer, which modify the film structure of storage dielectrics. Based on secondary ion mass spectrometer (SIMS) and Fourier transform infrared (FTIR) analysis, we propose the band model to clarify the influence of reoxidation and nitridation processes on cell trench capacitor
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
