High and Hyper NA Immersion Lithography using Advanced Patterning Film APF TM

M. van der Reijden, M. O. de Beeck, E. Sleeckx, P. Jaenen, E. Kunnen, B. Degroote, W. Yeh, R. Schreutelkamp
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Abstract

The objective of this work is to enable the manufacturing of features with most aggressive pitches available to date using APF as a strippable hard mask (HM). Essential for the capability of printing small and in particular dense features is the control of optical reflections during exposure. This is achieved through control of the optical parameters of the used films. The considered optical parameters are the complex reflection coefficient (ntilde = n - ik) and thickness. The angle of incidence of the exposing light when using high or hyper NA (numerical aperture) lithography is no longer negligible. As a consequence the optimum film thickness corresponding to the lowest reflection varies with the pitch of the features being imaged. In this paper we discuss the results based on a hyper-NA simulation illustrating the complexity of such an optimization process. Furthermore we discuss various high-NA simulations and corresponding physical experimental work confirming the validity of this approach
高和超NA浸入式光刻使用先进的图案膜APF TM
这项工作的目的是使用APF作为可剥离的硬掩模(HM)来制造迄今为止最具侵略性的特征。在曝光过程中对光学反射的控制是打印小而特别密集特征的关键。这是通过控制所用薄膜的光学参数来实现的。考虑的光学参数是复反射系数(ntilde = n - ik)和厚度。当使用高或超NA(数值孔径)光刻时,曝光光的入射角不再是可以忽略的。因此,与最低反射相对应的最佳薄膜厚度随被成像的特征的间距而变化。在本文中,我们讨论了基于超na仿真的结果,说明了这种优化过程的复杂性。此外,我们还讨论了各种高na模拟和相应的物理实验工作,以证实该方法的有效性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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