SOI硅片无创污染检测中二次谐波产生的实验评价

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI:10.1109/ASMC.2006.1638714

M. Alles, R. Pasternak, N. Tolk, peixiong zhao, D. Fleetwood, R. Standley

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引用次数: 6

摘要

我们报告了非侵入性二次谐波产生(SHG)测量的实验结果，该测量用于检测硅绝缘体上硅(SOI)晶圆中硅/埋地氧化物(BOX)和BOX/衬底界面的污染存在。论证了SHG作为过程控制计量工具的潜在应用

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Experimental Evaluation of Second Harmonic Generation for Non-Invasive Contamination Detection in SOI Wafers

We report experimental results from non-invasive second harmonic generation (SHG) measurements applied to detect the presence of contamination at the silicon/buried oxide (BOX) and BOX/substrate interfaces in silicon-on-insulator (SOI) wafers. The potential application of SHG as a metrology tool for process control is demonstrated

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The 17th Annual SEMI/IEEE ASMC 2006 Conference

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