The 17th Annual SEMI/IEEE ASMC 2006 Conference最新文献_第4页

Performance of Polarized Illuminators in Hyper NA Lithography Tools 超NA光刻工具中偏振照明器的性能

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638723

T. Matsuyama, H. Nishinaga, N. Tokuda, S. Hirukawa, O. Tanitsu, S. Owa

引用次数: 0

Semi-quantitative Analysis Techniques for AMC Monitoring AMC监测的半定量分析技术

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638788

Mei Leng Kwan, C. Muller, S. Tan, R. Thomas

{"title":"Semi-quantitative Analysis Techniques for AMC Monitoring","authors":"Mei Leng Kwan, C. Muller, S. Tan, R. Thomas","doi":"10.1109/ASMC.2006.1638788","DOIUrl":"https://doi.org/10.1109/ASMC.2006.1638788","url":null,"abstract":"The control of airborne molecular contamination (AMC) continues to grow as a requirement for all advanced semiconductor manufacturing. With more fabs using copper processing and 300 mm wafers and as we move past the 90 nm technology node, the requirements for AMC control are becoming more stringent. Most AMC control specifications call for levels to be at or below 1 part per billion (ppb) for the target contaminants and verifying of achievement and maintenance of these levels can be a very expensive proposition if real-time monitoring is an option being considered. There are a number of real-time monitoring technologies available that can measure at sub-ppb levels, however, they can cost upwards of US$20,000 per monitoring location. Due to the large investments required in terms of equipment, supplies, and personnel, manufacturers are looking for lower-cost AMC monitoring options that can still provide information relevant to the protection of processes and materials. There are a number of \"semi quantitative\" analysis techniques being used for AMC monitoring. By this we refer to those analytical techniques that provide quantitative information on environmental air quality, but do not measure specific contaminants. These techniques can involve passive or real-time monitoring using devices such litmus paper, witness wafers, impingers, multi-sorbent tubes, surface contamination monitors, and reactivity monitors. Semi quantitative AMC monitoring techniques are being used to establish AMC fingerprints or baselines for facilities, as part of an \"early warning\" system to identify and track AMC events, and for benchmarking various control strategies. This paper examines a number of these semi quantitative techniques being used today and discuss their relative strengths and weaknesses with regards to AMC monitoring. A relative cost comparison was offered","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129589581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Robust Defect Detection System Using Double Reference Image Averaging for High Throughput SEM Inspection Tool 基于双参考图像平均的高通量SEM检测工具鲁棒缺陷检测系统

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638781

T. Hiroi, H. Okuda

{"title":"Robust Defect Detection System Using Double Reference Image Averaging for High Throughput SEM Inspection Tool","authors":"T. Hiroi, H. Okuda","doi":"10.1109/ASMC.2006.1638781","DOIUrl":"https://doi.org/10.1109/ASMC.2006.1638781","url":null,"abstract":"This paper reports a defect detection system for a high throughput SEM inspection tool. Although the system has a big advantage compared to optical tools, that is, the ability to detect smaller defects and voltage contrast defects, the cost of ownership (COO) remains high. To enhance COO, throughput enhancement is the critical issue. A larger beam current results in lower image noise and higher throughput. At the same time, the larger the beam current, the lower is the resolution. We suggest a robust defect detection system as a solution to the trade-off between resolution and throughput. The main inspection targets are the voltage contrast (VC) defects on the memory matte. The system judges defects by subtracting a detected image from a reference image, and then determining the defective portion as a larger difference than the pre-determined threshold in the subtracted image. If the noise variation for the two images is a in both cases, the noise in the subtracted image is 1.4 sigma (= radic(sigma2 + sigma2)). We have developed a double reference image averaging (DRIA) system which improves the noise in the reference image by averaging repetitive patterns on the memory matte and noise variation on subtracted image is enhanced to a sigma (= radic(sigma2 + sigma2 )) ideally. This enhancement is equivalent to a two times higher throughput than conventional systems. We also improved the electron beam optics and show that our system throughput is 400 Mpixels per second (pps), which is four times faster than previous systems","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114198243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

The Use of Segregated Hydrofluoroethers in Semiconductor Wafer Processing 分离氢氟醚在半导体晶圆加工中的应用

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638772

P. G. Clark, L. Zazzera

{"title":"The Use of Segregated Hydrofluoroethers in Semiconductor Wafer Processing","authors":"P. G. Clark, L. Zazzera","doi":"10.1109/ASMC.2006.1638772","DOIUrl":"https://doi.org/10.1109/ASMC.2006.1638772","url":null,"abstract":"In this paper, we demonstrate the use of segregated hydrofluoroethers (HFE) as effective co-solvents in semiconductor wafer processing. Three examples are provided, etching of silicon oxide, post-ash low-k dielectric repair and post-etch residue removal for porous low-k dielectrics. HFE/IPA/HF chemistries yield greater than a 50times increase in silicon oxide etch rate relative to similar HF concentrations in aqueous media. In addition, the HFE mixtures have a surface tension of ~14 dynes/cm versus water which has a surface tension of ~72 dynes/cm. The lower surface tension HFE etchants are particularly useful in processing fragile high aspect ratio structures. HFE/IPA co-solvent mixtures can be used to partially restore low-k dielectric properties for materials which have been damaged during a plasma ash process. Alternatively, the HFE/IPA co-solvent chemistries can be used to remove photoresist and post-etch residue in non-damaging Cu/low-k cleaning applications. Specifically, NMP addition to HFE/IPA removes photoresist, while the addition of 2000ppm of HF(49%) to HFE-71IPA selectively removes residue on copper and low-k surfaces yielding improved electrical performance","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114326603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

STI Gap-Fill Technology with High Aspect Ratio Process for 45nm CMOS and beyond 适用于45纳米及以上CMOS的高宽高比补隙技术

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638726

A. Tilke, R. Hampp, C. Stapelmann, M. Culmsee, R. Conti, W. Wille, R. Jaiswal, M. Galiano, A. Jain

引用次数: 17

Defectivity Performance of Full Field Immersion Photolithography Tool 全场浸入式光刻工具的缺陷性能

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638720

K. Nakano, S. Nagaoka, S. Owa, I. Malik, T. Yamamoto

{"title":"Defectivity Performance of Full Field Immersion Photolithography Tool","authors":"K. Nakano, S. Nagaoka, S. Owa, I. Malik, T. Yamamoto","doi":"10.1109/ASMC.2006.1638720","DOIUrl":"https://doi.org/10.1109/ASMC.2006.1638720","url":null,"abstract":"In this paper, we report results of comprehensive studies of defects originating in immersion photolithography clusters comprising immersion volume production tool (S609B, NA=1.07) and engineering evaluation tool (EET NA = 0.85). Defectivity S609B was very low, 0.013 cm2 it attained dry exposure level successfully. Defectivity results using EET were also very promising in all three major resist processes including solvent soluble topcoat, developer soluble topcoat and topcoat-less resist. Defectivity did not show any scan speed dependency and target size dependency, showing the extendibility of our immersion technology in future mass production phase. In particular, we found that for 50 ml water droplets, weeding angle larger than about 70 degree provides immersion process free of immersion-specific defects. We successfully demonstrated very effective defect analysis technique named DSA (defect source analysis) to show what defects are immersion-specific. We also revealed the defect generation mechanism of each defect types. Deep understanding of defectivity behavior leads to a conclusion that immersion lithography is viable for IC manufacture at 45 nm node","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124995248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Advanced Process Monitoring and Control Methods for Poly Gate CD Targeting 多栅极CD瞄准的先进过程监控方法

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638718

J. Underwood, J. Gray, N. Shepherd, M. Caldwell, M. Neel, B. Darlington

引用次数: 4

Throughput Enhancement in Electron Beam Direct Writing by Multiple-cell Shot Technique for Logic Devices 提高逻辑器件电子束直写的多单元射击技术的吞吐量

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638755

S. Kosai, R. Inanami, M. Hamada, S. Magoshi, F. Hatori

引用次数: 4

Detection of Resistive Shorts and Opens using Voltage Contrast Inspection 用电压对比检测电阻性短路和断路

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638778

O. Patterson, H. Wildman, D. Gal, K. Wu

引用次数: 17

Yield Improvement Using Fail Signature Detection Algorithm (FSDA) 基于故障签名检测算法(FSDA)的成品率提高

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI: 10.1109/ASMC.2006.1638757

Anand Inani, R. Burch, J. Kim, B. Stine

引用次数: 3