适用于45纳米及以上CMOS的高宽高比补隙技术

The 17th Annual SEMI/IEEE ASMC 2006 Conference Pub Date : 2006-05-22 DOI:10.1109/ASMC.2006.1638726

A. Tilke, R. Hampp, C. Stapelmann, M. Culmsee, R. Conti, W. Wille, R. Jaiswal, M. Galiano, A. Jain

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引用次数: 17

摘要

本文采用一种新的基于O3/TEOS的亚大气化学气相沉积工艺实现了高纵横比工艺(HARP)，作为sub-65nm CMOS的STI间隙填充。我们证明了良好的间隙填充性能，直到宽高比大于10:1。由于与HDP相比，这种填充过程不会攻击STI衬管，因此可以实现各种不同的STI衬管

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STI Gap-Fill Technology with High Aspect Ratio Process for 45nm CMOS and beyond

In the present work the high aspect ratio process (HARP) using a new O3/TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gap fill in sub-65nm CMOS. We prove good gap fill performance up to aspect ratios larger 10:1. Since this fill process doesn't attack the STI liners as compared to HDP, a variety of different STI liners can be implemented

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The 17th Annual SEMI/IEEE ASMC 2006 Conference

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