Throughput Enhancement in Electron Beam Direct Writing by Multiple-cell Shot Technique for Logic Devices

S. Kosai, R. Inanami, M. Hamada, S. Magoshi, F. Hatori
{"title":"Throughput Enhancement in Electron Beam Direct Writing by Multiple-cell Shot Technique for Logic Devices","authors":"S. Kosai, R. Inanami, M. Hamada, S. Magoshi, F. Hatori","doi":"10.1109/ASMC.2006.1638755","DOIUrl":null,"url":null,"abstract":"This paper reports a new pattern design method improving the throughput of the character projection electron beam direct writing (CP-EBDW) lithography for cell-based logic devices. The shot count decreases to approximately one fifth in a 90 nm CMOS technology by assembling the standard cells (SCs) in the physical design stage and exposing them at a time with multiple-cell shot technique. The operating frequency degradation of the logic devices is less than 5 %","PeriodicalId":407645,"journal":{"name":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 17th Annual SEMI/IEEE ASMC 2006 Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2006.1638755","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This paper reports a new pattern design method improving the throughput of the character projection electron beam direct writing (CP-EBDW) lithography for cell-based logic devices. The shot count decreases to approximately one fifth in a 90 nm CMOS technology by assembling the standard cells (SCs) in the physical design stage and exposing them at a time with multiple-cell shot technique. The operating frequency degradation of the logic devices is less than 5 %
提高逻辑器件电子束直写的多单元射击技术的吞吐量
本文报道了一种新的图案设计方法,提高了基于单元的逻辑器件的字符投影电子束直写(CP-EBDW)光刻的吞吐量。在90纳米CMOS技术中,通过在物理设计阶段组装标准单元(sc),并使用多单元拍摄技术一次暴露它们,拍摄次数减少到大约五分之一。逻辑器件的工作频率衰减小于5%
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信