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Specific of magneto-optical response of nanostructures with various shapes and sizes for magnetic memory elaboration 不同形状和尺寸纳米结构的磁光响应特性
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2621683
A. V. Prokaznikov, V. A. Paporkov, V. Chirikov
{"title":"Specific of magneto-optical response of nanostructures with various shapes and sizes for magnetic memory elaboration","authors":"A. V. Prokaznikov, V. A. Paporkov, V. Chirikov","doi":"10.1117/12.2621683","DOIUrl":"https://doi.org/10.1117/12.2621683","url":null,"abstract":"In this work it is established that for regularities of the magneto-optical response from curved magnetic nanosructures, a crossover occurs at certain scales. At scales less than characteristic length the normalized value of magneto-optical hysteresis loop for transverse magneto-optical Kerr effect does not depend on incident angle of electromagnetic radiation. For curved nanostructures at scales of the order or large than characteristic length and at certain incident angles, hysteresis loops were observed that are inherent in magnetic vortex structures. For systems based on nanometers thick cobalt films deposited on various nanostructured substrates the characteristic length is of about of 100 nm. On the basis of the experimental data the energy consumption for the formation of vortex structures is estimated.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121164709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum memory on atomic frequency comb in a plasmon-polariton waveguide 等离子体-极化子波导中原子频率梳上的量子记忆
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2625231
N. Arslanov, S. Moiseev
{"title":"Quantum memory on atomic frequency comb in a plasmon-polariton waveguide","authors":"N. Arslanov, S. Moiseev","doi":"10.1117/12.2625231","DOIUrl":"https://doi.org/10.1117/12.2625231","url":null,"abstract":"In this work, we present a nano-optical scheme of quantum memory for surface plasmon-polariton (SPP) modes in a nanoscale planar waveguide with a resonant atomic ensemble characterized by the periodic structure of the inhomogeneously broadened line. The theoretical study of the SPP modes is presented, where the regime of slow propagation and low-losses was found for these modes with fixed transverse spatial confinement, which provides a strong nondissipative interaction with resonant atoms. We describe the basic physical properties of the studied scheme and demonstrate a perspective area for the implementation of fast nanoscale quantum memory and processing with surface SPP modes.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121173389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigations of the transmission and reflection spectra of THz radiation of magnetic metallic nanowires 磁性金属纳米线太赫兹辐射透射和反射光谱的研究
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623795
L. Fomin, V. Krishtop, E. Zhukova, S. Zhukov, D. Zagorsky, I. Doludenko, S. Chigarev, E. Vilkov, A. Panas
{"title":"Investigations of the transmission and reflection spectra of THz radiation of magnetic metallic nanowires","authors":"L. Fomin, V. Krishtop, E. Zhukova, S. Zhukov, D. Zagorsky, I. Doludenko, S. Chigarev, E. Vilkov, A. Panas","doi":"10.1117/12.2623795","DOIUrl":"https://doi.org/10.1117/12.2623795","url":null,"abstract":"The transmission and reflection spectra of arrays of heterogeneous nanowires made of Ni/Co, FeNi/Co, and Ni/Fe, formed in track polymer membranes by the galvanic method, have been studied in the frequency range from 16 to 250 THz. Many peaks in the 16-20 THz range were found in the transmission spectra, while they are not observed in the spectrum of a track membrane without nanowires. The absorption spectra of an array of nanowires in a track membrane and a membrane without wires are calculated from the obtained spectra. It was found that the fraction of the THz radiation power absorbed by nanowires and its spectrum depend on the materials of the nanowires. The features of the observed spectra can be explained by two mechanisms. The first is the inverse laser effect in magnetic nanocontacts. And the second is the change in electrical resistance due to spin-flip transitions between the spin subbands in the case of a non-coplanar distribution of the magnetization of the magnetic layers. This class of quasi-one-dimensional structures looks promising for creating THz radiation detectors in a wide spectral range and at room temperature.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128950714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calibration of step height standards in sub-micrometer range using three-dimensional reconstruction method in a scanning electron microscope 用扫描电子显微镜三维重建方法标定亚微米级台阶高度标准
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624254
V. B. Mityukhlyaev, V. G. Maslov
{"title":"Calibration of step height standards in sub-micrometer range using three-dimensional reconstruction method in a scanning electron microscope","authors":"V. B. Mityukhlyaev, V. G. Maslov","doi":"10.1117/12.2624254","DOIUrl":"https://doi.org/10.1117/12.2624254","url":null,"abstract":"In this paper we present a new method of calibration of step height standard (SHS) in sub-micrometer range using 3D reconstruction method based on processing of stereo-pair images, acquired by scanning electron microscope (SEM). According to the proposed method, we additionally used a silicon relief structure with approximately the same step height as SHS, and a stylus profiler. The true value of the tilt angle of the SEM specimen stage was measured using an arrangement comprising calibrated prismatic reflective member, mounted on the stage. The analysis of the sources of uncertainty of the step height measurements was carried out.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128609500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum assisted unsupervised data clustering on the basis of neural networks 基于神经网络的量子辅助无监督数据聚类
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2625092
I. D. Lazarev, Marek Narozniak, T. Byrnes, A. Pyrkov
{"title":"Quantum assisted unsupervised data clustering on the basis of neural networks","authors":"I. D. Lazarev, Marek Narozniak, T. Byrnes, A. Pyrkov","doi":"10.1117/12.2625092","DOIUrl":"https://doi.org/10.1117/12.2625092","url":null,"abstract":"Recent progress in machine learning has affected almost all areas of the modern economy. The use of quantum protocols to speed up classical machine learning approaches may have further profound effects on society in the future. Here, we developed a hybrid quantum-assisted self-organizing feature map, a type of artificial neural network, and apply it to the data clustering problem in an unsupervised manner. We show that it allows us to reduce the number of calculations in a number of clusters. It is believed that similar types of hybrid quantum classical algorithms can be the main test bed to achieve practical quantum supremacy on Noisy Intermediate Scale Quantum devices.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122621588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Competing mechanisms of strain relaxation in Ge/Si(001) heteroepitaxy Ge/Si(001)异质外延中应变松弛的竞争机制
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2619657
O. Trushin
{"title":"Competing mechanisms of strain relaxation in Ge/Si(001) heteroepitaxy","authors":"O. Trushin","doi":"10.1117/12.2619657","DOIUrl":"https://doi.org/10.1117/12.2619657","url":null,"abstract":"Atomistic simulation with semiempirical Stillinger-Weber potential has been used to study the energetics of strain relaxation in Ge/Si(001) heteroepitaxial system. Several alternative scenarios for misfit strain relief through dislocation nucleation have been investigated. Minimal energy path for each transition trajectory has been found using combination of modified DRAG and Nudged Elastic Band methods. Our results showed that standard 90° Lomer dislocation is the most favorable (global minimum) defect for this heteroepitaxial system. Alternative more complex defects containing two shifted 60° dislocations are indeed also local minima for this system, however corresponding to higher energy states. Their appearance in experiments might be the result of growth kinetics.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126438085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of implantable microprobe for silicon wet bulk micromachining 用于硅湿体微加工的可植入微探针设计
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624530
E. Gusev, A.V. Saryev, S. V. Malokhatko, O. Ageev
{"title":"Design of implantable microprobe for silicon wet bulk micromachining","authors":"E. Gusev, A.V. Saryev, S. V. Malokhatko, O. Ageev","doi":"10.1117/12.2624530","DOIUrl":"https://doi.org/10.1117/12.2624530","url":null,"abstract":"The paper presents the design features of silicon microprobe with a cross-sectional size less than 100 μm, taking into account the number of electrodes, as well as the conditions of anisotropic wet etching. Analytical calculations were carried out for the probe structure, represented by n-regions of various widths, carrying up to 2n-1 electrodes. The dependences of bottom width of the trapezoidal section of the probe and width of related mask on the thickness and top width of the probe are obtained. The permissible dimension ranges for several cases of one- to four-level microprobes have been established. The correction value of the mask size was estimated, reflecting the effect of etching conditions on the geometry of the probe. Modeling was carried out in an anisotropic wet etching simulator taking into account the conditions of KOH etching (in 20-40% solution at 60-80°C). It allowed to refine the results of the analytical calculations, refine dimensions of the silicon microprobe structure, the geometry of related masks, as well as the extent undercutting effect. The obtained results could be used in development of silicon microprobes formed by anisotropic wet etching.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115138266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of plasma resistance of the HSQ electronic resist for prototyping of nanoelectronic devices 用于纳米电子器件成型的HSQ电子电阻的等离子体电阻研究
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2626386
A. Miakonkikh, A. Shishlyannikov, A. Tatarintsev, V. Kuzmenko, K. Rudenko, E. Gornev
{"title":"Investigation of plasma resistance of the HSQ electronic resist for prototyping of nanoelectronic devices","authors":"A. Miakonkikh, A. Shishlyannikov, A. Tatarintsev, V. Kuzmenko, K. Rudenko, E. Gornev","doi":"10.1117/12.2626386","DOIUrl":"https://doi.org/10.1117/12.2626386","url":null,"abstract":"The study of the selectivity of the plasma etching of functional materials with respect to the mask of a negative electron resist based on hydrogen-silsesquioxane (HSQ) has been carried out. The formation of nanostructures with sub-50 nm critical dimensions by the HSQ mask has been studied for a number of materials: single-crystal silicon, a metallic Ta layer, dielectric layers of SiO2, Al2O3, HfO2, Si3N4, as well as a porous low-k dielectric based on organosilicate glass (OSG) on silicon substrates. It has been found that HSQ resist masks can be used to manufacture prototypes of microand nanoelectronic devices with critical dimensions less than 10 nanometers using a large number of materials, including for creating structures with relatively high aspect ratios with an absolute thickness of layers of functional materials of tens of nanometers.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131978914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of charge carrier quantum transport and isoenergy surface anisotropy on the high-frequency conductivity of a semiconductor nanolayer 载流子量子输运和等能表面各向异性对半导体纳米层高频电导率的影响
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622544
O. Savenko, I. A. Kuznetsova
{"title":"The influence of charge carrier quantum transport and isoenergy surface anisotropy on the high-frequency conductivity of a semiconductor nanolayer","authors":"O. Savenko, I. A. Kuznetsova","doi":"10.1117/12.2622544","DOIUrl":"https://doi.org/10.1117/12.2622544","url":null,"abstract":"A theoretical model of the high-frequency electrical conductivity of a semiconductor nanolayer is constructed within the framework of the quantum theory of transport phenomena. The layer thickness can be comparable to and less than the de Broglie wavelength of charge carriers. The isoenergy surface has the shape of an ellipsoid of revolution, the main axis of which is parallel to the layer plane. Analytical expressions are derived for the conductivity tensor components as a function of dimensionless thickness, electric field frequency, chemical potential, ellipticity parameter, and surface roughness parameters. The dependences of the longitudinal and transverse conductivity tensor components on the above parameters are analyzed. The results are compared for the cases of a degenerate and non-degenerate electron gas. A comparative analysis of theoretical calculations with known experimental data for a silicon film is performed.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124999390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-performance AIIIBV photodetector for on-chip optical interconnects 用于片上光互连的高性能AIIIBV光电检测器
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624343
I. Pisarenko, E. Ryndin, B. Konoplev
{"title":"High-performance AIIIBV photodetector for on-chip optical interconnects","authors":"I. Pisarenko, E. Ryndin, B. Konoplev","doi":"10.1117/12.2624343","DOIUrl":"https://doi.org/10.1117/12.2624343","url":null,"abstract":"The development of AIIIBV photodetectors with subpicosecond response time seems to be one of core problems in modern optoelectronics. Its solution is required, in particular, for the implementation of high-speed and high-level optical interconnections in ultra-large-scale integrated circuits. Previously, we proposed the concept of a photodetector with controlled relocation of carrier density peaks whose structure allows for mobility and lifetime modulation and, as a result, reduction of back-edge photocurrent lag in photosensitive p-i-n heterojunction. In this paper, we perform the analysis of electron and hole transport in the aforementioned sensor using a time-domain drift-diffusion semiclassical model. Numerical solution of the system that contains the two-dimensional continuity and Poisson equations allows us to evaluate key characteristics of the photodetector with controlled relocation and to modify its structure and photoreceiver circuit reasonably.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114670277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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