Investigation of plasma resistance of the HSQ electronic resist for prototyping of nanoelectronic devices

Abstract

The study of the selectivity of the plasma etching of functional materials with respect to the mask of a negative electron resist based on hydrogen-silsesquioxane (HSQ) has been carried out. The formation of nanostructures with sub-50 nm critical dimensions by the HSQ mask has been studied for a number of materials: single-crystal silicon, a metallic Ta layer, dielectric layers of SiO2, Al2O3, HfO2, Si3N4, as well as a porous low-k dielectric based on organosilicate glass (OSG) on silicon substrates. It has been found that HSQ resist masks can be used to manufacture prototypes of microand nanoelectronic devices with critical dimensions less than 10 nanometers using a large number of materials, including for creating structures with relatively high aspect ratios with an absolute thickness of layers of functional materials of tens of nanometers.