International Conference on Micro- and Nano-Electronics最新文献

Bifurcations and catastrophes at the boundaries separating the phases of quantum correlations 在分离量子相关相的边界处的分岔和突变

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622367

M. Yurischev

引用次数: 0

MEMS devices based on self-organizing semiconductors structures 基于自组织半导体结构的MEMS器件

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624592

M. Denisenko, A. Isaeva, I. Lysenko, A. Tkachenko

引用次数: 0

Induced bistable behavior in elements of the thermal reactor at silicon wafer heating in bistability mode 硅片在双稳模式下加热时热堆元件的诱导双稳行为

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623814

V. V. Ovcharov, V. P. Prigara

{"title":"Induced bistable behavior in elements of the thermal reactor at silicon wafer heating in bistability mode","authors":"V. V. Ovcharov, V. P. Prigara","doi":"10.1117/12.2623814","DOIUrl":"https://doi.org/10.1117/12.2623814","url":null,"abstract":"The work studies the induced bistability phenomenon in a thermal reactor elements involved in radiation heat exchange with the silicon wafer exhibiting bistable behavior. The heat balance equations for a silicon wafer and elements of a thermal reactor: a heater, a quartz window, and an absorber are derived. The control parameters in such a system were the heater temperature and the effective heat transfer coefficients, which characterize the heat removal from the quartz window and the radiation absorber by external agents. The effective heat transfer coefficient, which is responsible for the conductive component of the heat flux from the silicon wafer to the absorber, was also used. Simplified models of the thermal reactor are considered: first, with the quartz window and the absorber with its constant temperature, and second, without the quartz window and with the absorber varying its temperature. It is shown that in the quartz window and absorber there is the effect of induced bistability within the scope of both models. The evolution of a shape of a hysteresis loop is explained at the varying values of the heat exchange coefficients. It is found that temperature jumps of absorber in the instability points of bistable curve for the tungsten heater increases of two orders of value in compared with the heater whose optical properties are that of a blackbody. The explanation of the effect is suggested.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124740470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications 光电应用中锗/硅多纳米层中锗层的皮秒红外激光结晶

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622731

V. Volodin, G. Krivyakin, A. Bulgakov, Y. Levy, J. Beranek, S. Nagisetty, Z. Bryknar, N. Bulgakova, P. Geydt, A. Popov

引用次数: 5

Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene 基于单层和双层石墨烯的双栅场效应晶体管的量子漂移-扩散模型

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622451

I. I. Abramov, V. Labunov, Natallia V. Kalameitsava, I. A. Romanova, I. Y. Shcherbakova

{"title":"Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene","authors":"I. I. Abramov, V. Labunov, Natallia V. Kalameitsava, I. A. Romanova, I. Y. Shcherbakova","doi":"10.1117/12.2622451","DOIUrl":"https://doi.org/10.1117/12.2622451","url":null,"abstract":"At present, a great deal of interest is observed in devices based on two-dimentional (2D) materials, especially graphene, in the field of micro- and nanoelectronics. Graphene has robust hoheycomb lattice structure and unique properties such as ambipolarity, high carrier mobility, high conductivity. Nevertheless the properties of mono- and bilayer graphene are different. A significant difference in electrical characteristics of field-effect transistors (FETs) based on mono- and bilayer graphene was shown in few experimental works [1-3]. Note, that FET on bilayer graphene has demonstrated improved characteristics in comparison to FET on monolayer graphene [1,4,5]. Therefore a necessity to create models specifically for FETs on bilayer graphene appears. A tunable band gap is observed in the FET, when a perpendicular electrical field is applied to the bilayer graphene channel [6]. In the paper a quantum drift-diffusion model of FETs based on bilayer graphene is proposed. The model is a combination of electrical and physical models [7]. The mechanism of carrier transport along the bilayer graphene channel is considered. The electrostatic potential of the transistor channel is defined according to the band gap. Simulation of graphene dual-gate FET with channel length 4 µm is performed using the proposed model. Calculation of electrostatic potential of the investigated device structure was carried out. A good agreement with experimental data has been obtained for output characteristics of FETs based on monolayer graphene [8] using the developed model for this case. Different design parameters of FETs such as channel length, channel width, thickness of top- and back-gate dielectrics are used in the models. The proposed models of different FETs were included in the nanoelectronic devices simulation system NANODEV [9] developed at the BSUIR since 1995.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"204 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131549420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research method of the field transistors high frequency parameters using network analyzer 利用网络分析仪研究场晶体管高频参数的方法

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623146

T. Krupkina, V. Losev, A. Khlybov, D. Rodionov, E. Kotlyarov, P. Timoshenkov

引用次数: 0

Sensors based on graphene nanoribbons and polyaniline nanochannels with graphene-graphene oxide contacts formed by ion etching 基于石墨烯纳米带和聚苯胺纳米通道的传感器，通过离子蚀刻形成石墨烯-氧化石墨烯接触

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624365

A. Lashkov, N. Yakunina, A. Romashkin, N. Struchkov, K. Tsarik

引用次数: 1

Influence of the kind of metal on memristor effect in MIS structures MIS结构中金属种类对忆阻效应的影响

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624084

O. Orlov, A. Popov, A. Stepanov, P. Sattarov

{"title":"Influence of the kind of metal on memristor effect in MIS structures","authors":"O. Orlov, A. Popov, A. Stepanov, P. Sattarov","doi":"10.1117/12.2624084","DOIUrl":"https://doi.org/10.1117/12.2624084","url":null,"abstract":"In this study we investigated the influence of kind of metal on memristor effect in metal-insulator-semiconductor (MIS) structure. First, different metals have different work functions. This parameter can affect the flow of current through the MIS structure. Secondly, different metals have different binding energies of atoms. In this case, the bond energy consists of the energy of the metallic bond and the energy of the covalent bond. If we consider the model of the conductivity switching effect, in which a metal filament appears, this can affect the probability of its appearance. Thirdly, different metals and different methods of their deposition have different technological compatibility and ease of use. Two types of dielectrics were used for the experiments - silicon oxide and silicon nitride. Thin dielectric films were deposited on ptype monocrystalline silicon wafers. It was found that the best results among the tested metals were obtained using nickel deposited by electron beam evaporation. Copper proved to be poorly compatible with silicon oxide, since it easily diffuses into it and silicon. The other metals demonstrated the possibility of the appearance of the memristor effect. However, the yield was generally less than when nickel was used.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124086732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On methods of calculation of π on quantum computers 论量子计算机上π的计算方法

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624562

G. Bochkin

引用次数: 0

Investigation of GaAs MBE growth on FIB-modified Si(100) fib修饰Si(100)上GaAs MBE生长的研究

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624404

M. Eremenko, N. Shandyba, N. Chernenko, S. Balakirev, M. Solodovnik, O. Ageev

引用次数: 0