Influence of the kind of metal on memristor effect in MIS structures

Abstract

In this study we investigated the influence of kind of metal on memristor effect in metal-insulator-semiconductor (MIS) structure. First, different metals have different work functions. This parameter can affect the flow of current through the MIS structure. Secondly, different metals have different binding energies of atoms. In this case, the bond energy consists of the energy of the metallic bond and the energy of the covalent bond. If we consider the model of the conductivity switching effect, in which a metal filament appears, this can affect the probability of its appearance. Thirdly, different metals and different methods of their deposition have different technological compatibility and ease of use. Two types of dielectrics were used for the experiments - silicon oxide and silicon nitride. Thin dielectric films were deposited on ptype monocrystalline silicon wafers. It was found that the best results among the tested metals were obtained using nickel deposited by electron beam evaporation. Copper proved to be poorly compatible with silicon oxide, since it easily diffuses into it and silicon. The other metals demonstrated the possibility of the appearance of the memristor effect. However, the yield was generally less than when nickel was used.