发布求助
文献互助 智能选刊 最新文献

International Conference on Micro- and Nano-Electronics最新文献

筛选
英文 中文
Methodology for island surface structures investigation by x-ray photoelectron spectroscopy 用x射线光电子能谱研究岛屿表面结构的方法学
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623931
V. Afanas’ev, L. G. Lobanova, D. N. Selyakov, M. A. Semenov-Shefov
{"title":"Methodology for island surface structures investigation by x-ray photoelectron spectroscopy","authors":"V. Afanas’ev, L. G. Lobanova, D. N. Selyakov, M. A. Semenov-Shefov","doi":"10.1117/12.2623931","DOIUrl":"https://doi.org/10.1117/12.2623931","url":null,"abstract":"Results of theoretical and experimental surface layers (thickness ranges of 0.1 - 1 angstroms) investigation via X-ray photoelectron spectroscopy (XPS) peak shape analysis are presented. XPS measurements of submonolayer gold coatings on silicon substrate were carried out on two installations: (1) SPECS installation with an energy analyzer capable of recording XPS spectra of photoelectrons emitted in the angular range from 27 to 75 degrees, and (2) KRATOS installation rotating the target to register XPS spectra at angles close to the normal and angles that are about 70 degrees with the normal. Calculations consistently showed a decrease in coating thicknesses with an increase in the viewing angle relative to the normal. The observed effect is described on the basis of a parallelogram island coverage model. This model made it possible to observe the change in the path length distribution function (PLDF) of the emitted photoelectrons depending on the viewing angle. PLDF determines the intensity ratio of the coating and the substrate XPS signals. Results obtained indicate that a series of experiments with angular resolution should be carried out to determine the average effective coating thickness. The value of the critical viewing angle, after which the thickness data are stabilized, is determined by the density distribution of the islands.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131695363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Aluminum doped thermomigrated silicon channels for high voltage solar cells: structure and electrical properties 高压太阳能电池用掺铝热释硅通道:结构与电性能
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622306
A. Lomov, B. Seredin, S. Y. Martyushov, Igor Gavrus
{"title":"Aluminum doped thermomigrated silicon channels for high voltage solar cells: structure and electrical properties","authors":"A. Lomov, B. Seredin, S. Y. Martyushov, Igor Gavrus","doi":"10.1117/12.2622306","DOIUrl":"https://doi.org/10.1117/12.2622306","url":null,"abstract":"The results of a study of the real structure, electrical and photovoltaic characteristics of a monolithic solar module of 15 cells, made based on an array of p-n junctions in a Si (111) silicon wafer, are presented. The p-n junctions were formed by the boundaries of through vertical Al-doped (C= (0.95-1.05)×1019 cm-3) Si channels 100 μm wide at a distance of 3 mm. The perfection of the crystal lattice in the channel and near its boundaries has been investigated by X-ray methods: projection topography and high-resolution diffractometry in the transmission and reflection geometry. It is shown that the channel-matrix interface is coherent and there are no misfit dislocations on it. Typical defects in the p-channel are dislocation half-loops, which are located parallel to the surface of the wafer in its near-surface layer. The investigated solar 15-cells module demonstrates an efficiency of 13% at output 7.5 V and 30 mA. These photovoltaic parameters are comparable with the main electrical parameters of the planar analogues, despite the design features of the Si(Al) channels and the presence of structural distortions near the boundaries of the substrate matrix.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":" 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113947140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of inert gas pressure influence on electroforming and resistive switching of TiN-TiO2-SiO2-W memristors 惰性气体压力对TiN-TiO2-SiO2-W记忆电阻器电铸及电阻开关的影响研究
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622587
E. S. Gorlachev, V. Mordvintsev, S. Kudryavtsev
{"title":"Study of inert gas pressure influence on electroforming and resistive switching of TiN-TiO2-SiO2-W memristors","authors":"E. S. Gorlachev, V. Mordvintsev, S. Kudryavtsev","doi":"10.1117/12.2622587","DOIUrl":"https://doi.org/10.1117/12.2622587","url":null,"abstract":"In this work we have studied functioning of memristors based on TiN-TiO2-SiO2-W open edge sandwich structures on Si substrates in inert gas medium. A custom-made experimental setup that allowed controlled gas atmosphere within the pressure range of 0.0001-750 Torr was used. The electroforming was performed by a procedure of applying a quasistatic electric pulse of 10-20 V. The resistive switching was performed by pulses of 5 V, 30 ms for the “ON” switching and 5-8 V, 100 ns for the “OFF” switching. We carried out investigations for nitrogen and argon inert gases. As a result, first, we have established that the resistive switching in inert gases (both nitrogen and argon) of the memory elements electroformed in vacuum, reliably takes place in the entire inert gas pressure range including the maximum experimental value of 1 atm. Second, we showed that the electroforming takes place at the maximum inert gas pressure of 100 Torr.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122855856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Research of resonance frequencies of silicon membranes for a fiber-optic acoustic receiver 光纤声接收机硅膜谐振频率的研究
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624430
S. V. Malokhatko, E. Gusev, O. Ageev, T. Efimov, E. A. Rassolov, R. Romashko
{"title":"Research of resonance frequencies of silicon membranes for a fiber-optic acoustic receiver","authors":"S. V. Malokhatko, E. Gusev, O. Ageev, T. Efimov, E. A. Rassolov, R. Romashko","doi":"10.1117/12.2624430","DOIUrl":"https://doi.org/10.1117/12.2624430","url":null,"abstract":"The article presents the results of designing, manufacturing, and studying the resonant properties of a square silicon membrane for use in a fiber-optic acoustic receiver. The dependences of resonant frequency on edge length (6-9 mm) and thickness of the membrane (30-50 μm) are obtained. The geometrical parameters of the membrane satisfying the values of resonant frequency (2-60 kHz), pressure (0.1-14 Pa), and deviation (10 nm) are determined: edge length is 8 mm and thickness is 40-50 μm (9.2-42.3 kHz). A series of square silicon membranes was fabricated by anisotropic wet etching. The amplitude-frequency characteristics of the membranes were experimentally measured using an adaptive holographic interferometer. For a square membrane of 8×8×0.044 m3, the experimentally measured resonant frequency was 10.1 kHz, which is consistent with the results of numerical simulation.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131479728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic properties and hyperfine interactions of iron-borate single crystals and nanoparticles 硼酸铁单晶和纳米颗粒的磁性和超细相互作用
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2621008
M. Chuev
{"title":"Magnetic properties and hyperfine interactions of iron-borate single crystals and nanoparticles","authors":"M. Chuev","doi":"10.1117/12.2621008","DOIUrl":"https://doi.org/10.1117/12.2621008","url":null,"abstract":"We discuss the development of a correct theory of Mössbauer spectra of an iron borate single crystal, starting with a simple, but desperately needed technique of correction of any Mössbauer spectrum for the absorber (crystal) thickness, which is followed by the treatment of the Mössbauer spectra in the framework of the Hamiltonian of combined hyperfine magnetic and quadrupole interaction of 57Fe nuclei in ground and excited states. The latter results in appearance of two additional spectral lines to a conventional magnetic sextet and describes the specific asymmetry of pairs of lines observed in low-temperature experimental spectra of FeBO3 crystals. We demonstrate and explain also the characteristic difference in the shape of Mössbauer spectra of the FeBO3 single crystal and nanoparticles. A drastic difference in the shapes of magnetization curves of the FeBO3 single crystal and nanoparticles is demonstrated and evaluated in the framework of the generalized Stoner-Wohlfarth model which is extended for antiferromagnetic nanoparticles.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127670600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes 考虑在线性和饱和状态下“外在”MOSFET漏极电流的紧凑建模中的体效应
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624419
V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, M. Shur
{"title":"Accounting for the body effect in the compact modeling of an “extrinsic” MOSFET drain current in the linear and saturation regimes","authors":"V. Turin, R. Shkarlat, V. Poyarkov, O. Kshensky, G. Zebrev, B. Iñiguez, M. Shur","doi":"10.1117/12.2624419","DOIUrl":"https://doi.org/10.1117/12.2624419","url":null,"abstract":"We use a linear approximation for the threshold voltage dependence on the body bias to derive the equation for the equivalent output resistance of the “extrinsic” MOSFET in the saturation regime. Previously we derived an equation for the equivalent output resistance of the “extrinsic” MOSFET in the saturation regime, that is based on the “intrinsic” transistor finite output resistance in the saturation regime. But we did not account for the body effect, i.e., the threshold voltage dependence on the body bias applied between the source and the fourth (body) MOSFET terminal. For the earlier generations of MOSFETs, the theory predicts that threshold voltage is a sublinear function of the body bias. However, modern transistors with steep retrograde body doping profiles exhibit an approximately linear relationship between a threshold voltage and a body bias, which allowed us to include the body effect into the compact model of an “extrinsic MOSFET. In addition, we discuss the application of our results to the theory of a common-source amplifier with an NMOS transistor with source degeneration.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129497380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of electrodes material on the I-V-curve and switching of memristors on the base of electroformed open metal-SiO2-metal sandwich structure 基于电铸开放式金属- sio2 -金属夹层结构的电极材料对忆阻器i - v曲线和开关的影响
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622539
S. Kudryavtsev, V. Mordvintsev, V. Naumov, E. S. Gorlachev
{"title":"Effect of electrodes material on the I-V-curve and switching of memristors on the base of electroformed open metal-SiO2-metal sandwich structure","authors":"S. Kudryavtsev, V. Mordvintsev, V. Naumov, E. S. Gorlachev","doi":"10.1117/12.2622539","DOIUrl":"https://doi.org/10.1117/12.2622539","url":null,"abstract":"The study of electroforming processes in various open sandwich metal-SiO2-metal structures (with different materials of electrodes) and I–V-curves at both voltage polarities allowed to find the main factor responsible for the presence of stable electroforming and the absence of breakdowns after electroforming (N-shape I-V-curve can be drawn repeatedly). This factor is making of structure anode of tungsten at any (top or bottom) position of this electrode. The use of molybdenum instead of tungsten in such structures essentially allows to decrease the electroforming voltage (from 10-11 to 4-5 V), which makes the process more reliable.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"abs/2210.11643 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125822254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Descriptional complexity of unitary transformations 酉变换的描述复杂性
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2620457
A. Kaltchenko
{"title":"Descriptional complexity of unitary transformations","authors":"A. Kaltchenko","doi":"10.1117/12.2620457","DOIUrl":"https://doi.org/10.1117/12.2620457","url":null,"abstract":"Weintroduce the notion of descriptional complexity of nite-dimensional unitary transformations, which is closely related to the notion of Kolmogorov complexity of a quantum state. In quantum computing, quantum states are associated with quantum data, and unitary transformations of quantum states are associated with quantum computer programs.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127399076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Copper filled contact plugs formation 铜填充接触塞形成
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624164
S. Gorokhov, S. Patyukov, V. Plaksin
{"title":"Copper filled contact plugs formation","authors":"S. Gorokhov, S. Patyukov, V. Plaksin","doi":"10.1117/12.2624164","DOIUrl":"https://doi.org/10.1117/12.2624164","url":null,"abstract":"The paper considers the possibility of the formation of contact plugs filled with copper instead of conventional tungsten (Fig. 1). There are increased requirements for diffusion barrier layers due to the proximity to transistor structures. Several candidate films based on TaN, TiN have been evaluated as diffusion barrier layers in terms of adhesion to copper, electrical properties, and filling contact plug. As a result, device structures with copper contact plugs have been obtained, and corresponding to the specification results have been confirmed.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128151915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the influence of the parameters of the temporary bonding and thinning operations on the bending of silicon wafers 研究了暂接和减薄工艺参数对硅片弯曲性能的影响
International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623584
N. A. Djuzhev, M. A. Makhiboroda, E. Gusev, M. U. Fomichev, A. Dedkova, P. Ivanin
{"title":"Investigation of the influence of the parameters of the temporary bonding and thinning operations on the bending of silicon wafers","authors":"N. A. Djuzhev, M. A. Makhiboroda, E. Gusev, M. U. Fomichev, A. Dedkova, P. Ivanin","doi":"10.1117/12.2623584","DOIUrl":"https://doi.org/10.1117/12.2623584","url":null,"abstract":"This paper shows the result of working out the operations of temporary bonding of Si-Si wafers and Si-glass wafers. The influence of materials and parameters of technological operations on the warpage of the resulting structures was investigated in order to reduce the bending of the device wafer when performing the processes of temporary bonding and thinning.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133150615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信