N. A. Djuzhev, M. A. Makhiboroda, E. Gusev, M. U. Fomichev, A. Dedkova, P. Ivanin
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Investigation of the influence of the parameters of the temporary bonding and thinning operations on the bending of silicon wafers
This paper shows the result of working out the operations of temporary bonding of Si-Si wafers and Si-glass wafers. The influence of materials and parameters of technological operations on the warpage of the resulting structures was investigated in order to reduce the bending of the device wafer when performing the processes of temporary bonding and thinning.
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