Effect of electrodes material on the I-V-curve and switching of memristors on the base of electroformed open metal-SiO2-metal sandwich structure

Abstract

The study of electroforming processes in various open sandwich metal-SiO2-metal structures (with different materials of electrodes) and I–V-curves at both voltage polarities allowed to find the main factor responsible for the presence of stable electroforming and the absence of breakdowns after electroforming (N-shape I-V-curve can be drawn repeatedly). This factor is making of structure anode of tungsten at any (top or bottom) position of this electrode. The use of molybdenum instead of tungsten in such structures essentially allows to decrease the electroforming voltage (from 10-11 to 4-5 V), which makes the process more reliable.