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International Conference on Micro- and Nano-Electronics最新文献

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Luminescent properties of GeOx thin films and GeO/SiO2 heterostructures modified with swift heavy ions 快速重离子修饰的GeOx薄膜及GeO/SiO2异质结构的发光性能
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2521696
S. Cherkova, V. Volodin, V. Skuratov, M. Stoffel, H. Rinnert, M. Vergnat
{"title":"Luminescent properties of GeOx thin films and GeO/SiO2 heterostructures modified with swift heavy ions","authors":"S. Cherkova, V. Volodin, V. Skuratov, M. Stoffel, H. Rinnert, M. Vergnat","doi":"10.1117/12.2521696","DOIUrl":"https://doi.org/10.1117/12.2521696","url":null,"abstract":"The luminescent and structural properties of GeOx thin films and GeO/SiO2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 1013 cm−2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ~0.8 eV to ~1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO2, but causes the intermixing of GeO/SiO2 layers with the formation of Ge-O-Si bonds.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124074328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research and analysis of heat exchange processes of a micromechanical mirror based on a thermal microactuator 基于热微致动器的微机械反射镜换热过程研究与分析
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2520519
S. Evstafyev, V. Samoylikov
{"title":"Research and analysis of heat exchange processes of a micromechanical mirror based on a thermal microactuator","authors":"S. Evstafyev, V. Samoylikov","doi":"10.1117/12.2520519","DOIUrl":"https://doi.org/10.1117/12.2520519","url":null,"abstract":"This paper considers the multi-sectional structure of the thermal micromechanical mirror element, developed and manufactured by the National Research University \"MIET\". The structure consists of a movable part and a fixed part. The movable part includes a pair of thermal microactuators based on a multilayer structure of silicon oxide and aluminum, and a mirror reflecting element coated with aluminum. The fixed part is the area of attachment of the element to the silicon wafer. The temperature distribution along the length of the multi-sectional structure of the thermal microactuator is calculated taking into account the effect of the system of transverse heat-conducting structures under various heating conditions. An essential difference between the calculations, reaching two times, was established. The experimental studies showed the adequacy of the calculation results and proved that the calculation of the temperature distribution should take into account the cooling effect of transverse heat-conducting structures. Based on the calculations and experimental studies, a technique is proposed for analyzing the thermal state of the microactuator that takes into account the cooling effect of the transverse heat-conducting structures.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122263474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of mechanical deformations on absorption spectrum of metallic films of nanometer thickness 机械变形对纳米厚度金属薄膜吸收光谱的影响
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2521961
K. Tsysar, V. Andreev, V. Zelensky, E. Smelova, A. Saletsky, V. Vdovin
{"title":"Effect of mechanical deformations on absorption spectrum of metallic films of nanometer thickness","authors":"K. Tsysar, V. Andreev, V. Zelensky, E. Smelova, A. Saletsky, V. Vdovin","doi":"10.1117/12.2521961","DOIUrl":"https://doi.org/10.1117/12.2521961","url":null,"abstract":"Optical properties of silver nanofilms on its thickness and mechanical deformations in visible and infrared ranges are studied theoretically. The deformation of the film during its elongation leads to a rearrangement of the structure of a surface layer and the appearance of dislocations. It is shown that 9% elongation is crucial for the six monolayer silver film. Mechanical deformations change the electronic structure of atoms in a film, which leads to a significant change in their optical properties. Stretching of the film shifts the absorption peak to the long wavelength region and leads to a slight decrease in absorption. The effects are explained by the significant transformation of the electron structure of deformed silver nanofilms.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127655554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cyclic discrete etching of Silicon oxide in deposition-sputtering cycles: towards to ALE 沉积-溅射循环中氧化硅的循环离散刻蚀:走向ALE
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2522472
V. Kuzmenko, A. Miakonkikh, K. Rudenko
{"title":"Cyclic discrete etching of Silicon oxide in deposition-sputtering cycles: towards to ALE","authors":"V. Kuzmenko, A. Miakonkikh, K. Rudenko","doi":"10.1117/12.2522472","DOIUrl":"https://doi.org/10.1117/12.2522472","url":null,"abstract":"Basic properties of cyclic discrete etching process for Silicon dioxide were studied in conventional plasma etching tool. Process under consideration is based on consequent deposition of fluorocarbon polymer film from plasma of C4F8, and following activation of etching reaction between surface Silicon and Fluorine contained in the film by ion flux from plasma. Deposition rate of polymer film and its etching rate were measured by means of spectral ellipsometry at different wafer temperatures. Atomic layer etching process was demonstrated with usage of Oxygen and Argon plasma. Saturation of per cycle etching rate was achieved with respect to duration of deposition step.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124075860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multi-qubit controlled NOT gates for artificial intelligence natural languages processing 用于人工智能自然语言处理的多量子位控制非门
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2522447
F. Ablayev, S. Andrianov, N. S. Andrianova, A. Kalachev, A. Vasiliev
{"title":"Multi-qubit controlled NOT gates for artificial intelligence natural languages processing","authors":"F. Ablayev, S. Andrianov, N. S. Andrianova, A. Kalachev, A. Vasiliev","doi":"10.1117/12.2522447","DOIUrl":"https://doi.org/10.1117/12.2522447","url":null,"abstract":"Natural language processing is efficient using quantum neural networks including multiqubit controlled NOT gates with multiple control qubits and a single target qubit. We propose here a photonic miltiqubit controlled NOT gate based on a multi-wave mixing process in a cavity. Theory of such a multiqubit gate is constructed using input-output formalism. Parameters matching condition is found that must be fulfilled for successful gate operation. Recommendations are given for the construction of quantum neural networks that are able to solve various practical problems of natural language processing.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125728298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid acousto-nano-biosensor 混合acousto-nano-biosensor
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2521796
V. Kolesov, Vladimir Anisimkin, I. Kuznetsova, E. Soldatov, S. Dagesyan, A. Melnikov, V. Kashin, A. Smirnov
{"title":"Hybrid acousto-nano-biosensor","authors":"V. Kolesov, Vladimir Anisimkin, I. Kuznetsova, E. Soldatov, S. Dagesyan, A. Melnikov, V. Kashin, A. Smirnov","doi":"10.1117/12.2521796","DOIUrl":"https://doi.org/10.1117/12.2521796","url":null,"abstract":"The technology realizing two multi-scale structures on piezoelectric single crystal lithium niobate plate was developed. The system of interdigital electrodes for the acoustic delay line operating at the range 2-3 MHz was produced by using photolithography. This delay line was combined with the nanotransduces having size about 60-80 nm. These transducers were produced by using negative electron-beam nanolithography.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123720457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge effects in dielectric films of MIS structures being under high-field injection of electrons at ionizing radiation 电离辐射下高场电子注入下MIS结构介电膜中的电荷效应
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2521985
V. Andreev, V. Maslovsky, D. Andreev, A. Stolyarov
{"title":"Charge effects in dielectric films of MIS structures being under high-field injection of electrons at ionizing radiation","authors":"V. Andreev, V. Maslovsky, D. Andreev, A. Stolyarov","doi":"10.1117/12.2521985","DOIUrl":"https://doi.org/10.1117/12.2521985","url":null,"abstract":"In this work we study influence of α-particles and gamma-ray onto MIS structures being under high-field FowlerNordheim injections of electrons into the gate dielectric. We discover that ionizing current occurring at the time of radiation of MIS structures being under high-field injection of electrons by constant current can significantly lower density of injection current and decrease electric field in the dielectric film. We demonstrate that from analysis of time dependency of voltage across MIS structure at the time of constant current flowing we can determine a value of ionization current. The effect can be utilized for sensors of radiations which allow to control both intensity of radiation and a value of integral absorbed dose of ionizing radiation. We develop a model describing processes of change of charge state of MIS structures being under high-field injection at radiation influence. This model takes into account an interaction of injected electrons with products occurring in the dielectric film as a result of ionization radiation.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130513829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Investigation of technological operations for manufacturing 3D micro-assemblies with embedded elements 嵌入式三维微组件制造工艺流程研究
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2521797
S. Kruchinin, S. Timoshenkov
{"title":"Investigation of technological operations for manufacturing 3D micro-assemblies with embedded elements","authors":"S. Kruchinin, S. Timoshenkov","doi":"10.1117/12.2521797","DOIUrl":"https://doi.org/10.1117/12.2521797","url":null,"abstract":"The internal mounting technology is the mounting of open-dies in a functional radio-electronic module substrate structure. This method does not require the microcircuits packaging, since the package task carry out the microelectronic product substrate. As a working surface for a microelectronic product today we have a huge selection of materials. For example, to produce flexible boards, polymer materials such as polyimides are actively used. That material is characterized by wide regulation possibilities of composition, structure and properties. The internal mounting technology implies the open-dies embedding into the polymer material, followed by etching to the open-die contact pad (CP), and the added ability to integrate 3D design will significantly improve the technology in many parameters. In addition, flexible materials allow the development of complex-shaped micro-assemblies, which is one of the important advantages in a powerful products development and their subsequent installation in hard-to-reach spots.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130705134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions 热电电荷和自旋电流在磁隧道结中诱导的静态和动态自旋转矩二极管灵敏度
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2522526
G. Demin, A. Popkov
{"title":"Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions","authors":"G. Demin, A. Popkov","doi":"10.1117/12.2522526","DOIUrl":"https://doi.org/10.1117/12.2522526","url":null,"abstract":"Based on the quantum-mechanical transport calculations of the charge and spin fluxes associated with the inhomogeneous thermal heating of three-dimensional structure of MTJ by the input RF microwave power, finite-element analysis of the thermal contribution to the spin-torque sensitivity of MTJ was carried out in the case of zero bias current. Within the magnon-induced spin-transfer torque model, the amplification of DC rectifying voltage in the spin-torque diode initiated by the spin pumping to the tunnel barrier from magnons was also estimated. The results obtained can be used for the development of new types of microwave detectors based on spin thermoelectric effects in MTJ.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132325218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sidewall defects in deep cryogenic Si etching in SF6/O2 plasma: a numerical simulation 深低温硅在SF6/O2等离子体中蚀刻的侧壁缺陷:数值模拟
International Conference on Micro- and Nano-Electronics Pub Date : 2019-03-15 DOI: 10.1117/12.2522414
M. Rudenko, A. Miakonkikh, D. Kurbat, V. Lukichev
{"title":"Sidewall defects in deep cryogenic Si etching in SF6/O2 plasma: a numerical simulation","authors":"M. Rudenko, A. Miakonkikh, D. Kurbat, V. Lukichev","doi":"10.1117/12.2522414","DOIUrl":"https://doi.org/10.1117/12.2522414","url":null,"abstract":"A model for the simulation of two-dimensional profile evolution during cryogenic Si etching in SF6/O2 plasma is proposed and implemented. It employs Monte-Carlo method for particle fluxes computation and cell-based representation of the profile. The model is tuned specifically for studying various profile defects of stochastic nature. To this end the state of a model cell is represented as the combination of states of several subcells, stochastically chosen on each particle-surface interaction, thus allowing to represent profile phenomena with high- resolution without compromising simulation performance. The model is verified by matching the simulation results with experimental data; good qualitative agreement is observed. Then it is used to investigate surface defects specific to high aspect ratio cryogenic etching. Among them are depth-dependent wall roughness, cavern formation, trench splitting and black silicon formation.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122540109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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