Static and dynamic spin-torque-diode sensitivity induced by the thermoelectric charge and spin currents in magnetic tunnel junctions

Based on the quantum-mechanical transport calculations of the charge and spin fluxes associated with the inhomogeneous thermal heating of three-dimensional structure of MTJ by the input RF microwave power, finite-element analysis of the thermal contribution to the spin-torque sensitivity of MTJ was carried out in the case of zero bias current. Within the magnon-induced spin-transfer torque model, the amplification of DC rectifying voltage in the spin-torque diode initiated by the spin pumping to the tunnel barrier from magnons was also estimated. The results obtained can be used for the development of new types of microwave detectors based on spin thermoelectric effects in MTJ.