International Conference on Micro- and Nano-Electronics最新文献_第4页

Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET 皮秒激光辐照深亚微米SOI MOSFET光响应的蒙特卡罗模拟

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624174

A. Borzdov, V. Borzdov, V. Vyurkov

引用次数: 0

Some properties of maximal trace measure of quantum computer error rate 量子计算机错误率最大迹量的若干性质

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624606

Leonid Fedichkin, Andrii Kurkin

引用次数: 0

Towards receiving wide-band superconductor antenna unit technology 迈向接收宽带超导天线单元技术

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623659

N. Kolotinskiy, D. Bazulin, V. Kornev

引用次数: 0

Development and research of a micromechanical accelerometer sensor element 微机械加速度计传感器元件的开发与研究

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623136

V. V. Kalugin, E. Kochurina, L. Boev, S. Anchutin, A. Timoshenkov

引用次数: 0

Gate-controlled sensing of ammonia by single-layer MoS2 field-effect transistor 用单层二硫化钼场效应晶体管门控氨传感

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623293

N. S. Struchkov, Nikita P. Nekrasov, Aleksei V. Emelianov, Feruza F. Tuyakova, I. Bobrinetskiy

引用次数: 0

Investigation of the gas-phase deposition of material layers in plasma-vacuum systems for MEMS production processes 等离子体真空系统中材料层气相沉积的研究

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2619681

V. Samoylikov, S. Timoshenkov, S. Evstafyev

{"title":"Investigation of the gas-phase deposition of material layers in plasma-vacuum systems for MEMS production processes","authors":"V. Samoylikov, S. Timoshenkov, S. Evstafyev","doi":"10.1117/12.2619681","DOIUrl":"https://doi.org/10.1117/12.2619681","url":null,"abstract":"This paper presents the results of gas-phase deposition of silicon epitaxial layers studies obtained under real production conditions. The research is based on innovative techniques that have expanded the physical understanding of the process, which has improved the adequacy of the final results. Based on the developed physical modeling methodology, a study of the silicon epitaxial layers deposition process was carried out. The results were processed in a generalized form and could be represented by simple criterion relations. Based on the studies the area of the technological process with maximum possible homogeneity of silicon epitaxial layers deposition parameters was determined. It was shown that the silicon epitaxial layers deposition rate is determined by the interaction between the outgoing flow (from the nozzle) and reverse flow (at the moment when the wafer is between the nozzles). The use of the technique based on the autodopping effect showed that the distribution of the dopant impurity (from the local source) in the deposition zone is inhomogeneous and a significant part of the impurity is transferred in the direction of the jet flow. The plasma chemical deposition process of SiHxNy has been studied. As a defining parameter of the plasma chemical deposition process, the number ReL characterizing the gas dynamics of the process is chosen. Studies were performed at pressures in the reaction chamber of 100, 50, and 10 Pa, which corresponds to values ReL =1.2, 0.8, and 0.4. It is shown that greater uniformity of the deposited layer occurs at higher pressures.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"12157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130746919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation of various nanoelectronic devices based on 2D materials 基于二维材料的各种纳米电子器件的仿真

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622445

I. I. Abramov, V. Labunov, Natallia V. Kalameitsava, I. A. Romanova, I. Y. Shcherbakova

{"title":"Simulation of various nanoelectronic devices based on 2D materials","authors":"I. I. Abramov, V. Labunov, Natallia V. Kalameitsava, I. A. Romanova, I. Y. Shcherbakova","doi":"10.1117/12.2622445","DOIUrl":"https://doi.org/10.1117/12.2622445","url":null,"abstract":"The development of field-effect transistors (FETs), resonant-tunneling diodes (RTDs), vertical heterostructures and other device structures on the basis of 2D materials is one of the important tasks for producing a new element base for micro and nanoelectronics. The wave function formalism was applied in the development of numerical model of vertical heterostructures based on 2D materials [1, 2]. Combined self-consistent models [3, 4] were adapted for the case of taking into account vertical transport in the conduction band. The influence of various factors on the electric characteristics of the vertical heterostructures based on graphene, h-BN and MoS2 was investigated with the use of the developed model. The IVcharacteristics of such structures were calculated for different number of layers of 2D materials that forms potential barriers and quantum wells. Comparison of the results of simulation of the investigated structures is carried out. A numerical combined model based on a self-consistent numerical solution of the Schrödinger and Poisson equations in the active region of the device was used to calculate the IV-characteristics of GaN/AlGaN-based RTDs with vertical transport [5, 6]. The proposed model was used to study the effect of the aluminum concentration in the barriers on the IV-characteristics of the considered RTDs. Developed quantum drift-diffusion model of FET based on monolayer graphene was described in detail [7, 8]. The model is based on quantum drift-diffusion approximation of carrier transport. Graphene channel is located between topand back-gate dielectrics. With the use of the model simulation of dual-gate FET with channel width 18 μm was considered. A good agreement with experimental data was obtained for number of applied voltages. Adequacy of the model is confirmed by these calculations. The programs realizing the proposed models were included in the nanoelectronic devices simulation system developed at the BSUIR since 1995 [9, 10].","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124324418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum version of self-balanced binary search tree with strings as keys and applications 以字符串为键的自平衡二叉搜索树的量子版本及其应用

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624619

K. Khadiev, Syumbel Enikeeva

引用次数: 2

Application of methods used in electron spectroscopy spectra interpretation to ion spectroscopy signals analysis 电子能谱解释方法在离子能谱信号分析中的应用

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623922

V. Afanas’ev, L. G. Lobanova, D. N. Selyakov, M. A. Semenov-Shefov

引用次数: 0

Quantum entanglement in a family of Heisenberg models with the multiple components of Dzyaloshinsky-Moriya and Kaplan-Shekhtman-Entin-Wohlman-Aharony interactions 具有Dzyaloshinsky-Moriya和Kaplan-Shekhtman-Entin-Wohlman-Aharony相互作用多分量的海森堡模型族中的量子纠缠

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622369

Anna Fedorova, M. Yurischev

引用次数: 0