International Conference on Micro- and Nano-Electronics最新文献_第5页

Beam power absolute measurements using the calorimetric method 用量热法对光束功率进行绝对测量

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624099

V. Kudrya

{"title":"Beam power absolute measurements using the calorimetric method","authors":"V. Kudrya","doi":"10.1117/12.2624099","DOIUrl":"https://doi.org/10.1117/12.2624099","url":null,"abstract":"Mathematical models for three types of beam power calorimeters that do not require calibration are considered. These types are: adiabatic, with a calibrated heat sink, and based on water-flow cooling. For the adiabatic type a transient solution of the corresponding heat transfer equation is presented and its features are considered. Two definitions of the response time are proposed. The question of determining its sensitivity is considered. Based on these definitions, a solution to the problem of the receiving plate material optimal choice in terms of the ratio of sensitivity and response time is proposed. For the type with a calibrated heat sink a simple lumped parameters model is considered. Based of this model estimations of the calorimeter sensitivity and response time were made. For the water-flow type some analytical results following from equations describing its operation within the framework of a quasi-one-dimensional thermal model are presented. A consistent simplification of these equations is considered, which made it possible to obtain simple relationships for assessing the sensitivity, response time, and heating temperature of the receiving plate. A thermal energy balance equation for the stationary mode of operation is obtained. Within the framework of the proposed approach, a rough estimate of the lower boundary of the response time of the water-flow calorimeter was obtained. Wherever possible, comparisons have been made with published experimental and theoretical results. The results obtained can be used for development and design of calorimetric diagnostics systems of fast neutral particle beams.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116813016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum hashing on the high-dimensional states 高维态上的量子哈希

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624628

F. Ablayev, Alexander Vasiliev

引用次数: 1

Investigations of multiple quantum NMR dynamics of spin dimer on quantum computer 自旋二聚体在量子计算机上的多量子NMR动力学研究

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624088

A. Belova, A. Fedorova, E. Kuznetsova

引用次数: 0

Elements of satellite quantum network 卫星量子网络的要素

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624443

V. Kurochkin, A. Khmelev, V. Mayboroda, R. M. Bakhshaliev, A. V. Duplinsky, Y. Kurochkin

{"title":"Elements of satellite quantum network","authors":"V. Kurochkin, A. Khmelev, V. Mayboroda, R. M. Bakhshaliev, A. V. Duplinsky, Y. Kurochkin","doi":"10.1117/12.2624443","DOIUrl":"https://doi.org/10.1117/12.2624443","url":null,"abstract":"Long-distance quantum key distribution (QKD) is a critical component of a quantum network. When network users are within a city, they often use existing telecommunication fiber-optic networks. This method is problematic for QKD on a large scale between cities and countries. Direct connecting of distant consumers with quantum single-photon lines is not possible, because optical fiber involves attenuation. This problem is addressed by constructing a large number of trusted intermediate nodes, but there are concerns with the reliability of each node. To increase the quantum network's dependability, a method of building a satellite quantum network is actively developing. The only one trusted satellite node is required for satellite QKD between any two points on the Earth's surface. Furthermore, a satellite quantum link can also be utilized to add another communication channel in the existing fiber-optic networks that are thousands of kilometers apart. We describe the creation of ground infrastructure elements for receiving single photons in various polarization quantum states from satellites. Ground-based receiving nodes are based on two telescopes with an aperture of 1.2 m and 0.6 m located in remote cities.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"90 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126114372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A universal approach to FET compact modeling: case study for MESFETs and OFETs 场效应管紧凑建模的通用方法:mesfet和ofet的案例研究

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624179

D. S. Malich, G. Zebrev

引用次数: 0

Formation of nanocrystalline BaTiO3 thin films by pulsed laser deposition 脉冲激光沉积纳米晶BaTiO3薄膜

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624410

Z. Vakulov, Kseniia Korzun, R. Tominov, V. Smirnov, O. Ageev

引用次数: 0

Re-orientation of graphoepitaxial fluorite films towards small-index crystallographic planes 石墨外延萤石薄膜向小折射率晶体平面的重新取向

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623743

P. Mozhaev, I. Bdikin, J. Bindslev Hansen, C. S. Jacobsen

{"title":"Re-orientation of graphoepitaxial fluorite films towards small-index crystallographic planes","authors":"P. Mozhaev, I. Bdikin, J. Bindslev Hansen, C. S. Jacobsen","doi":"10.1117/12.2623743","DOIUrl":"https://doi.org/10.1117/12.2623743","url":null,"abstract":"Graphoepitaxial CeO2 and Y:ZrO2 (YSZ) thin films showed re-orientation towards (012), (013) small-index crystallographic planes (SIPCs) due to surface energy minimization effects, with deviation from the expected tilt angles up to 4.5º. Re-orientation of the CeO2 films towards the (012) plane was obtained for the intermediate range of deposition rate and oxygen partial pressure, providing high plasticity of the lattice of the film due to formation of oxygen vacancies, and the relatively low bonding strength of the film-substrate interface. The realization of re-orientation of the YSZ graphoepitaxial films demanded intentional suppression of the epitaxial bonding between the film and the substrate. The effect was observed both for (012) and (013) SICPs. The re-orientation is obtained easier when the film experiences additional tilting towards the substrate plane, reaching inclination angles of 2.5-4.5º. The re-orientation from the substrate plane is also possible, but such films are usually re-oriented partially, and the observed inclination angle is limited to ~0.3º. The re-oriented films show a lower spread of orientations of domains, observed as a decrease of the width of the rocking curve. The reason is the co-orienting effect of the substrate surface during growth, opposite to the mis-orienting effect of dislocations generation for ordinary graphoepitaxial films. The lattice constant normal to the epiplane experiences distortion near the surface of the film, contractive for a decrease of the final tilt angle and tensile for re-orientation from the substrate surface.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131075308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Features of the formation of highly sensitive nanoscale films SnO2 doped with platinum for sensing applications 用于传感应用的高灵敏度SnO2掺杂铂纳米薄膜的形成特征

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624651

K. Tsarik, V. Petukhov, N. S. Struchkov

引用次数: 0

Techniques for analyzing digital elevation models of surface topography of microelectronics objects 微电子物体表面形貌数字高程模型分析技术

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623908

A. Dedkova, I. Florinsky, N. A. Djuzhev

引用次数: 1

Quantum memory on multi atom-resonator system 多原子谐振系统的量子存储器

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2625226

S. Moiseev, N. Perminov, A. Zheltikov

引用次数: 0