International Conference on Micro- and Nano-Electronics最新文献

{"title":"Influence of diffusion hydrogen on the radiation hardness of silicon devices","authors":"E. Polushkin, S. V. Nefediev, A. Kovalchuk, O. Soltanovich, S. Shapoval","doi":"10.1117/12.2624184","DOIUrl":"https://doi.org/10.1117/12.2624184","url":null,"abstract":"The paper discusses methods for increasing the resistance of silicon semiconductor devices to ionizing radiation. A key feature of the presented methods is that there is no need to modify the topology, i.e. the described technological methods make it possible to increase the stability of integrated circuits by adding some technological operations to the standard process flow (not radiation hardy).","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125021002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A fast membrane actuator in the current stabilization regime","authors":"I. Uvarov, A. E. Melenev, V. Svetovoy","doi":"10.1117/12.2623816","DOIUrl":"https://doi.org/10.1117/12.2623816","url":null,"abstract":"Microfluidic systems such as labs-on-a-chip or drug delivery devices require a built-in actuator to drive pumps and valves. The electrochemical actuator is a promising option due to its compact size, low power consumption and high integration capability, but long time of gas termination makes this device rather slow. Recently, the actuator of a new type was demonstrated, which is based on the electrolysis of water performed by microsecond voltage pulses of alternating polarity (AP). It operates several orders of magnitude faster than the conventional DC actuator, but extreme operation conditions lead to the electrode degradation and rapid decrease of the performance. In this work, we demonstrate the long-term operation of the actuator without significant loss of the stroke. This result is achieved due to a new working regime, in which the time interval between series of AP pulses is filled with single polarity (SP) pulses, in contrast with the normal regime, where the SP pulses are not used. The new regime is realized by a specially developed pulse generator that tracks the current flowing through the electrodes and adjusts the amplitude of SP pulses to stabilize the current at a given level. We verify the current stabilization regime at the actuator with the oxidized Ti electrodes and compare it to the normal operation.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121669762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of the peak current and valley current of the current-voltage curve in self-excitation and amplification processes in GaAs / A1As THz resonant tunneling nanostructures","authors":"A. A. Aleksanyan, A. L. Karuzskii, Y. Mityagin, A. V. Perestoronin, N. A. Volchkov, A. Chernyaev","doi":"10.1117/12.2622466","DOIUrl":"https://doi.org/10.1117/12.2622466","url":null,"abstract":"The study of GaAs/AlAs terahertz resonant tunneling diodes demonstrates the competition of self-excitation and amplification processes incorporating the terahertz-range polaritons. The effects of the magnitude of the resonant peak current and low current in the valley of the current-voltage characteristic are demonstrated taking into account the general laws of detection in the mode of internal amplification in the region of negative differential conductivity.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121134298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"AFM study of the MoS2 thin films deposited by magnetron sputtering growth initial stage","authors":"A. I. Belikov, K. Phyo, M. Guk","doi":"10.1117/12.2622386","DOIUrl":"https://doi.org/10.1117/12.2622386","url":null,"abstract":"Molybdenum disulfide (MoS2) thin films with a thickness of about 3.5 nm to 11.5 nm on Si (111) and sapphire (0001) substrates were prepared by the stoichiometric MoS2 target (99.9% purity) magnetron sputtering. The structure formation features of the thin films were studied by preparing samples under the same deposition conditions and different deposition times 10, 20, and 30 s. Atomic force microscopy (AFM) was used to study the thin film samples' morphological features and revealed various mechanisms of films structure formation on Si and sapphire substrates. For the thin films samples, the reflection spectra obtained and the values of the optical band gap were determined, which ranged from 1.73 to 1.69 eV.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116085517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system","authors":"S. Zyuzin, Yason G. Zasseev, A. Rezvanov, Vitaliy V. Panin, V. Gvozdev, Y. Gornev","doi":"10.1117/12.2624575","DOIUrl":"https://doi.org/10.1117/12.2624575","url":null,"abstract":"This paper presents results achieved in thin films deposition of hafnium oxide by using the Russian system “Izofaz TM 200-01” developed by the Research Institute of Precision Machine Manufacturing. Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH) and oxygen plasma were used as precursors for atomic layer deposition. Thin films with various thicknesses (100-300 Å) of high uniformity and overall quality were obtained.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116130769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in modeling emerging magnetoresistive random access memories: from finite element methods to machine learning approaches","authors":"J. Ender, S. Fiorentini, Roberto L. de Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov","doi":"10.1117/12.2624595","DOIUrl":"https://doi.org/10.1117/12.2624595","url":null,"abstract":"Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. They are promising for stand-alone and embedded applications in the automotive industry, microcontrollers, Internet of Things, frame buffer memory, and slow SRAM. The MRAM cell usually includes a CoFeB fixed reference layer and a free magnetic layer (FL), separated by a tunnel barrier. To design ultra-scaled MRAM cells it is necessary to accurately model the torques acting on the magnetization in composite magnetic layers with one or several nonmagnetic inclusions between the ferromagnetic parts. The magnetization dynamics is governed by the Landau-Lifshitz- Gilbert (LLG) equation supplemented with the corresponding torques. The torques depend on nonequilibrium spin accumulation generated by an electric current. The electric current and the spin accumulation also depend on the magnetization. Therefore, the LLG and the spin-charge transport equations are coupled and must be solved simultaneously. We apply the finite element method (FEM) to numerically solve this coupled system of partial differential equations. To develop an open source solver, we use well-developed C++ FEM libraries. The computationally most expensive part is the demagnetizing field calculation. It is performed by a hybrid finite element-boundary element method. This confines the simulation domain for the field evaluation to the ferromagnets only. Advanced compression algorithms for large, dense matrices are used to optimize the performance of the demagnetizing field calculation in complex structures. To evaluate the torques acting on the magnetization, a coupled spin and charge transport approach is implemented. For the computation of the torques acting in a magnetic tunnel junction (MTJ), a magnetization-dependent resistivity of the tunnel barrier is introduced. A fully three-dimensional solution of the equations is performed to accurately model the torques acting on the magnetization. The use of a unique set of equations for the whole memory cell including the FL, fixed layer, contacts, and nonmagnetic spacers is one of the advantages of our approach. To incorporate the temperature increase due to the electric current, we solve the heat transport equation coupled to the electron, spin, and magnetization dynamics, and we demonstrate that the FL temperature is highly inhomogeneous due to a non-uniform magnetization of the FL during switching. Spin-orbit torque (SOT) MRAM is fast-switching and thus well suitable for caches. By means of micromagnetic simulations, we demonstrate the purely electrical switching of a perpendicular FL by the SOTs due to two orthogonal short current pulses. To further optimize the pulse sequence, a machine learning approach based on reinforcement learning is employed. Importantly, a neural network trained on a fixed material parameter set achieves switching for a wide range of material parameter variations.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121116533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"FEM simulation of AlN-based MEMS energy harvester","authors":"P. S. Shlepakov, I. Uvarov","doi":"10.1117/12.2624607","DOIUrl":"https://doi.org/10.1117/12.2624607","url":null,"abstract":"A device for harvesting the energy of mechanical vibrations and converting it to electricity by the piezoelectric effect is simulated. The main part of the harvester is a multilayer cantilever with a piezoelectric layer sandwiched between two metallic electrodes. The cantilever typically has a rectangular design, which is characterized by insignificant deformation of the free end. As a result, this region undergoes low mechanical stress and produces small amount of electric charge. A tapered shape of the cantilever increases the stress at the tip and, therefore, enhances the performance. In this work, we investigate the stress distribution and output characteristics of the energy harvester with the tapered cantilever. Reducing the width of the free end increases the stress in this area for 4.5 times compared to the conventional design, which raises the average stress by more than 60%. The tapered design increases the output power and voltage by more than 20%.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129701490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Light sensitive memristors based on GeSixOy films with Ge nanoclusters","authors":"V. Volodin, G. N. Kamaev, I. D. Yushkov, G. Krivyakin, S. Cherkova, M. Vergnat","doi":"10.1117/12.2622642","DOIUrl":"https://doi.org/10.1117/12.2622642","url":null,"abstract":"For the development of information technology, more and more memory arrays are needed. Recently, memristors have been the most promising candidates for the creation of modern universal memory. The possibility of light stimulated resistive switching (RS) is promising for creating optical computers, technical vision and neuron networks. The studied SixGeyOz solid alloys films (~50-65 nm) were obtained by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum (10-8 Torr) and deposition onto n+-type, p+-type Si(001), and on Al/SiO2/Si(001) heated up to 100°C. The transparent indium tin oxide (ITO) contacts were used as top electrode. It was found, that as-deposited GeOx[SiO](1-x) films contain amorphous Ge (a-Ge) nanoclusters. The furnace annealing at temperature 500 °C lead to further forming of a-Ge clusters in both types of the films. Reversible (up to several thousand cycles) RS from high resistance state (HRS) to low resistance state (LRS) (memristor effect) were observed for the semiconductor-dielectric-metal structures, namely p+-Si (or n+-Si)/ GeO[SiO2] (or GeO[SiO]) /ITO structures (MIS structures) in air atmosphere. Both negative and positive photoconductivity was observed in the annealed MIS structure when both negative/positive voltage biases were applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes from a-Ge nanoclusters, which act as deep traps. The effects of light-induced RS was observed for annealed MIS structures based on GeO[SiO] films with a-Ge nanoclusters. These results are promising for creation of photomemristors and optoelectronic devices combining the properties of a memristor.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"12157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128667309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Methylated porous low-k materials: critical properties and plasma resistance","authors":"A. Rezvanov, A. Miakonkikh, A. Vishnevskiy, D. Seregin, K. Vorotilov, K. Rudenko, M. Baklanov","doi":"10.1117/12.2624608","DOIUrl":"https://doi.org/10.1117/12.2624608","url":null,"abstract":"Porous OSG low-k dielectrics deposited by using TEOS and MTEOS mixture with different ratios and Brij® 30 surfactant. The deposited samples contain a different concentration of terminal methyl groups that is proportional to MTEOS concentration. An increase in the methyl groups concentration by changing TEOS/MTEOS ratio decreases the open porosity, k-value, and Young’s modulus and increases the mean pore radius although the template concentration was kept constant. Plasma damage by fluorine radicals depends on the carbon concentration in the films. It can be reduced by 60% when the carbon concentration in the film exceeds 10 atomic percent as measured by XPS (the films deposited with TEOS/MTEOS ratio 40/60).","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125638415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum transistor with multi-qubit memory in an integral waveguide-resonator scheme","authors":"N. Arslanov, S. Andrianov, Yuliya A. Kharlamova, S. Moiseev","doi":"10.1117/12.2625224","DOIUrl":"https://doi.org/10.1117/12.2625224","url":null,"abstract":"In this work, we present an integrated waveguide-resonator scheme of an atomic quantum transistor with a multi-qubit memory. The quantum transistor is realized in an atomic-photon molecule formed of a linear chain of three interconnected resonators, each of which contains one resonant three-level atom. The resonators are connected through the waveguides to the quantum memory containing long-lived multi-atomic ensembles capable of storage of photonic qubits with an arbitrary temporal mode. We consider the protocols for implementation of one- and two-qubit operations in the proposed scheme over a system of qubits stored in quantum memory. The advantages and experimental implementation of the proposed scheme are also discussed.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123705633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}