Effects of the peak current and valley current of the current-voltage curve in self-excitation and amplification processes in GaAs / A1As THz resonant tunneling nanostructures

A. A. Aleksanyan, A. L. Karuzskii, Y. Mityagin, A. V. Perestoronin, N. A. Volchkov, A. Chernyaev
{"title":"Effects of the peak current and valley current of the current-voltage curve in self-excitation and amplification processes in GaAs / A1As THz resonant tunneling nanostructures","authors":"A. A. Aleksanyan, A. L. Karuzskii, Y. Mityagin, A. V. Perestoronin, N. A. Volchkov, A. Chernyaev","doi":"10.1117/12.2622466","DOIUrl":null,"url":null,"abstract":"The study of GaAs/AlAs terahertz resonant tunneling diodes demonstrates the competition of self-excitation and amplification processes incorporating the terahertz-range polaritons. The effects of the magnitude of the resonant peak current and low current in the valley of the current-voltage characteristic are demonstrated taking into account the general laws of detection in the mode of internal amplification in the region of negative differential conductivity.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Micro- and Nano-Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2622466","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The study of GaAs/AlAs terahertz resonant tunneling diodes demonstrates the competition of self-excitation and amplification processes incorporating the terahertz-range polaritons. The effects of the magnitude of the resonant peak current and low current in the valley of the current-voltage characteristic are demonstrated taking into account the general laws of detection in the mode of internal amplification in the region of negative differential conductivity.
GaAs / A1As太赫兹共振隧道纳米结构自激和放大过程中电流-电压曲线峰值电流和谷电流的影响
GaAs/AlAs太赫兹共振隧道二极管的研究证明了包含太赫兹极化的自激和放大过程的竞争。考虑到在负差分电导率区域内放大模式下的一般检测规律,论证了谐振峰电流和谷中低电流的大小对电流-电压特性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信