Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system

Abstract

This paper presents results achieved in thin films deposition of hafnium oxide by using the Russian system “Izofaz TM 200-01” developed by the Research Institute of Precision Machine Manufacturing. Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH) and oxygen plasma were used as precursors for atomic layer deposition. Thin films with various thicknesses (100-300 Å) of high uniformity and overall quality were obtained.