A. A. Aleksanyan, A. L. Karuzskii, Y. Mityagin, A. V. Perestoronin, N. A. Volchkov, A. Chernyaev
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Effects of the peak current and valley current of the current-voltage curve in self-excitation and amplification processes in GaAs / A1As THz resonant tunneling nanostructures
The study of GaAs/AlAs terahertz resonant tunneling diodes demonstrates the competition of self-excitation and amplification processes incorporating the terahertz-range polaritons. The effects of the magnitude of the resonant peak current and low current in the valley of the current-voltage characteristic are demonstrated taking into account the general laws of detection in the mode of internal amplification in the region of negative differential conductivity.
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