International Conference on Micro- and Nano-Electronics最新文献_第7页

Modification of bounded J-Ramp method to monitor reliability and charge degradation of gate dielectric of MIS devices 改进有界J-Ramp方法监测MIS器件栅介电介质可靠性和电荷退化

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623812

D. Andreev, V. Maslovsky, V. Andreev, A. Stolyarov

{"title":"Modification of bounded J-Ramp method to monitor reliability and charge degradation of gate dielectric of MIS devices","authors":"D. Andreev, V. Maslovsky, V. Andreev, A. Stolyarov","doi":"10.1117/12.2623812","DOIUrl":"https://doi.org/10.1117/12.2623812","url":null,"abstract":"This paper suggests a novel method to control quality and reliability of thin dielectric films of the gate dielectric of MIS structures. The proposed method is based on a modification of bounded J-Ramp. This technique, besides the control of charge injected into the gate dielectric until its breakdown, gives a capability to monitor a change of charge state of the gate dielectric during all the test procedure. In order to implement this, after ending of a test (current) step we switch the test current to the measurement current level (Jm) for a short time period and this allows to monitor the voltage change across MIS structure at the constant measurement current density. The current density Jm is chosen to meet the condition that at this level a s significant charge degradation of the dielectric should not be observed. Besides, the switches to measurement level should not greatly influence on bounded J-ramp test procedure. The modified J-ramp method proposes to monitor amount of injected charge, at which irreversible degradation of MIS device characteristics takes place (Qdeg), and evaluate reliability of the dielectric film on the basis of statistical measurements of these quantities.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130789241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Numerical study of aperture shape effects in deep cryogenic etching of silicon 硅深低温刻蚀中孔径形状影响的数值研究

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2622908

M. Rudenko, A. Miakonkikh, V. Lukichev

引用次数: 0

RF MEMS switch with double-clamp and wafer level package with through silicon vias for integration RF MEMS in applications 5G and internet of things RF MEMS开关，采用双箝位和晶圆级封装，带硅通孔，用于5G和物联网应用中的集成RF MEMS

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624586

A. Tkachenko, I. Lysenko, A. Kovalev

{"title":"RF MEMS switch with double-clamp and wafer level package with through silicon vias for integration RF MEMS in applications 5G and internet of things","authors":"A. Tkachenko, I. Lysenko, A. Kovalev","doi":"10.1117/12.2624586","DOIUrl":"https://doi.org/10.1117/12.2624586","url":null,"abstract":"Reducing the complexity of the architecture of radio-frequency systems and subsystems of 5G mobile networks and Internet of Things currently requires the presence of passive RF components with very high performance. Considering these requirements, the technology of radio-frequency microelectromechanical systems for the development of passive RF devices allows us to solve the corresponding tasks related to the requirements of 5G and Internet of Things, concerning passive components and building blocks. Packaging of radio-frequency microelectromechanical systems and other passive components is a delicate issue, especially in line with future application contexts such as 5G and the Internet of Things, in which operating frequencies are approaching millimeter waves. In fact, when working with radio-frequency signals, the package, in addition to protecting encapsulated devices, should also have as limited an impact on their electromagnetic characteristics and performance as possible. Therefore, the packaging design stage must be carried out with extreme care. In this study, the verification of the methodology for electromagnetic modeling of a packaging solution at the wafer-level using through silicon vias for redistributing an electrical signal from passive radio-frequency microelectromechanical devices in package to other radio-frequency devices is discussed using the example of the developed capacitive radio-frequency microelectromechanical switch with double-clamp.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134351906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Uncertainty of the linewidth of a nanoobject at control it in a low-voltage SEM 在低压扫描电镜下控制纳米物体线宽的不确定度

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624223

Y. Larionov, Yu. V. Ozerin

{"title":"Uncertainty of the linewidth of a nanoobject at control it in a low-voltage SEM","authors":"Y. Larionov, Yu. V. Ozerin","doi":"10.1117/12.2624223","DOIUrl":"https://doi.org/10.1117/12.2624223","url":null,"abstract":"The relief structure (RS) with vertical sidewalls (SW) is promising as the linewidth measure for low-voltage (LV)SEM due to similarity of its profile to the one of the SCCDRM linewidth standards. So it can be used as the terminal link in the metrological traceability chain beginning from this standard. But there is an obstacle for its calibration: RS image are changing over time during continuous scanning the measure by electron beam that is natural for measure usage. Changes arise from the variation of the emission of slow secondary electrons (SSE) forming the image of the RS surface. This emission variation appears in turn due to the change of induced charge on the RS surface. Changes of the charge disposed near RS edges have critical influence on RS linewidth that leads to its value uncertainty. It is revealed that the degree of the influence depends on the layout of emitting site on RS sidewall (SW). Emission variations from its lower sites have a less induction on the RS image. So if one uses a regime of SSE extraction from these lower SW sites then the linewidth uncertainty is bound to decrease. Internal parts of the vertical SW are preferred not only due to its higher degree of its surface smoothness compared to its upper parts but also due to its SSE emission stability during scanning.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133470193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Designing thermal MEMS on a system level 在系统级设计热MEMS

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2619684

S. Evstafyev, V. Samoylikov, S. Timoshenkov, P. Gornostaev

{"title":"Designing thermal MEMS on a system level","authors":"S. Evstafyev, V. Samoylikov, S. Timoshenkov, P. Gornostaev","doi":"10.1117/12.2619684","DOIUrl":"https://doi.org/10.1117/12.2619684","url":null,"abstract":"In this paper, a systematic method for designing a basic thermal MEMS design is discussed using the example of a thermal micromechanical mirror developed by MIET. The mirror is made with microelectronic technology and consists of two movable bimorph structures made of aluminum and silicon dioxide. A reflective element with an aluminumcoated surface is attached to the movable beams. The movable beams are fixed to a silicon substrate and are controlled by applying а voltage to electrical heating elements formed inside the movable beams. Heating causes uneven expansion of the materials that make up the beams, which in turn causes the structure to move. The proposed design process involves algorithmic design using three developed models to determine the initial parameters of the thermal actuator, its static and dynamic characteristics, and the response to the control action. The use of such an algorithm in the design flow allows for a quick selection of the basic geometric and physical parameters that should ensure that the actuator has the required performance and characteristics. This significantly reduces the time taken during the initial design phase of the device.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133770699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI 高温硅VLSI用W、Re、Ti、N合金金属化的电物理力学性能研究

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624348

A. V. Timakov, V. Shevyakov

{"title":"Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI","authors":"A. V. Timakov, V. Shevyakov","doi":"10.1117/12.2624348","DOIUrl":"https://doi.org/10.1117/12.2624348","url":null,"abstract":"It is shown that today one of the priority directions of development of the electronic industry both abroad and in our country is the creation of silicon semiconductor devices and ICs with submicron topological norms, capable of functioning at temperatures of 200 °C and above. It is noted that although in modern ICs aluminum (with additions of silicon and copper) and copper are used as the interconnect material, recently researchers have shown interest in using tungsten as an interconnect material, which is characterized by high electromigration resistance. In the study of the mechanical properties of alloys W with Re, Ti, N films it was found that they are characterized by a reduced level of mechanical stresses compared with the built-in mechanical stresses in the W – Si structure. It was revealed that the alloy films have satisfactory adhesion to silicon and silicon oxide. Tungsten and its alloys films deposited on silicon from the point of view of their use as interconnects in high-temperature silicon ICs, confirmed the prospects for use in VLSI based on a comparative analysis of electrophysical and mechanical characteristics.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126509744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability issues for electrostatically actuated MEMS switch 静电驱动MEMS开关的可靠性问题

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2623060

I. Uvarov, M. Izyumov

引用次数: 0

Long-term irradiation effects in p-MNOS transistor: experiment results p-MNOS晶体管的长期辐照效应:实验结果

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624612

E. Mrozovskaya, P. Chubunov, G. Zebrev

引用次数: 0

Cobalt subtractive etch for advanced interconnects 用于高级互连的钴减法蚀刻

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624333

A. Rogozhin, A. Miakonkikh, A. Tatarintsev, Ildar I. Amirov, Konstantin V. Rudenko

引用次数: 1

Magnetron deposition of MoS2 ultrathin films in conditions of magnetic field. 磁场条件下二硫化钼超薄膜的磁控管沉积。

International Conference on Micro- and Nano-Electronics Pub Date : 2022-01-30 DOI: 10.1117/12.2624496

A. I. Belikov, A. I. Syomochkin, K. Phyo, V. Kalinin

引用次数: 0