Investigation of the electrophysical and mechanical properties of metallization based on alloys W with Re, Ti, N for high-temperature silicon VLSI

Abstract

It is shown that today one of the priority directions of development of the electronic industry both abroad and in our country is the creation of silicon semiconductor devices and ICs with submicron topological norms, capable of functioning at temperatures of 200 °C and above. It is noted that although in modern ICs aluminum (with additions of silicon and copper) and copper are used as the interconnect material, recently researchers have shown interest in using tungsten as an interconnect material, which is characterized by high electromigration resistance. In the study of the mechanical properties of alloys W with Re, Ti, N films it was found that they are characterized by a reduced level of mechanical stresses compared with the built-in mechanical stresses in the W – Si structure. It was revealed that the alloy films have satisfactory adhesion to silicon and silicon oxide. Tungsten and its alloys films deposited on silicon from the point of view of their use as interconnects in high-temperature silicon ICs, confirmed the prospects for use in VLSI based on a comparative analysis of electrophysical and mechanical characteristics.