Magnetron deposition of MoS2 ultrathin films in conditions of magnetic field.

A. I. Belikov, A. I. Syomochkin, K. Phyo, V. Kalinin
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Abstract

Molybdenum disulfide (MoS2) ultrathin films have been deposited onto Si substrates with different deposition parameters by DC-magnetron sputtering (DCMS) using of external magnetic field (MF) to contribute to the improvement of the promising device's characteristics for nano, optoelectronics, plasmonic, and spintronics. The film properties and morphology structure were compared in the case of the MF presence and its absence, varying the pole of the magnet, deposition time, the slope of the substrate holder, and the magnetic induction. The influence of MF on the MoS2 thin films parameters such as grain size, surface roughness, bandgap energy, was studied by using atomic force microscopy (AFM) and spectrophotometry.
磁场条件下二硫化钼超薄膜的磁控管沉积。
采用外磁场直流磁控溅射(DCMS)技术在不同沉积参数的Si衬底上制备了二硫化钼(MoS2)超薄膜,提高了该器件在纳米、光电子、等离子体和自旋电子学方面的性能。比较了在磁场存在和不存在的情况下,改变磁极、沉积时间、衬底支架的斜率和磁感应强度,薄膜的性能和形貌结构。利用原子力显微镜(AFM)和分光光度法研究了MF对MoS2薄膜晶粒尺寸、表面粗糙度、带隙能等参数的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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