E. Polushkin, S. V. Nefediev, A. Kovalchuk, O. Soltanovich, S. Shapoval
{"title":"扩散氢对硅器件辐射硬度的影响","authors":"E. Polushkin, S. V. Nefediev, A. Kovalchuk, O. Soltanovich, S. Shapoval","doi":"10.1117/12.2624184","DOIUrl":null,"url":null,"abstract":"The paper discusses methods for increasing the resistance of silicon semiconductor devices to ionizing radiation. A key feature of the presented methods is that there is no need to modify the topology, i.e. the described technological methods make it possible to increase the stability of integrated circuits by adding some technological operations to the standard process flow (not radiation hardy).","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Influence of diffusion hydrogen on the radiation hardness of silicon devices\",\"authors\":\"E. Polushkin, S. V. Nefediev, A. Kovalchuk, O. Soltanovich, S. Shapoval\",\"doi\":\"10.1117/12.2624184\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper discusses methods for increasing the resistance of silicon semiconductor devices to ionizing radiation. A key feature of the presented methods is that there is no need to modify the topology, i.e. the described technological methods make it possible to increase the stability of integrated circuits by adding some technological operations to the standard process flow (not radiation hardy).\",\"PeriodicalId\":388511,\"journal\":{\"name\":\"International Conference on Micro- and Nano-Electronics\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Micro- and Nano-Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2624184\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Micro- and Nano-Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2624184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of diffusion hydrogen on the radiation hardness of silicon devices
The paper discusses methods for increasing the resistance of silicon semiconductor devices to ionizing radiation. A key feature of the presented methods is that there is no need to modify the topology, i.e. the described technological methods make it possible to increase the stability of integrated circuits by adding some technological operations to the standard process flow (not radiation hardy).
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
