Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET

Abstract

Drain current photoresponse of deep submicron SOI MOSFET with 50 nm channel length is simulated by ensemble Monte Carlo method. The photoresponse is simulated under the effect of picosecond laser pulses with 532 and 650 nm wavelengths at 5⋅1010 and 1011 W/m2 intensity. The current decay and the dynamics of generated charge carriers in the transistor channel are studied.