{"title":"皮秒激光辐照深亚微米SOI MOSFET光响应的蒙特卡罗模拟","authors":"A. Borzdov, V. Borzdov, V. Vyurkov","doi":"10.1117/12.2624174","DOIUrl":null,"url":null,"abstract":"Drain current photoresponse of deep submicron SOI MOSFET with 50 nm channel length is simulated by ensemble Monte Carlo method. The photoresponse is simulated under the effect of picosecond laser pulses with 532 and 650 nm wavelengths at 5⋅1010 and 1011 W/m2 intensity. The current decay and the dynamics of generated charge carriers in the transistor channel are studied.","PeriodicalId":388511,"journal":{"name":"International Conference on Micro- and Nano-Electronics","volume":"267 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET\",\"authors\":\"A. Borzdov, V. Borzdov, V. Vyurkov\",\"doi\":\"10.1117/12.2624174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Drain current photoresponse of deep submicron SOI MOSFET with 50 nm channel length is simulated by ensemble Monte Carlo method. The photoresponse is simulated under the effect of picosecond laser pulses with 532 and 650 nm wavelengths at 5⋅1010 and 1011 W/m2 intensity. The current decay and the dynamics of generated charge carriers in the transistor channel are studied.\",\"PeriodicalId\":388511,\"journal\":{\"name\":\"International Conference on Micro- and Nano-Electronics\",\"volume\":\"267 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Micro- and Nano-Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2624174\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Micro- and Nano-Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2624174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte Carlo simulation of picosecond laser irradiation photoresponse of deep submicron SOI MOSFET
Drain current photoresponse of deep submicron SOI MOSFET with 50 nm channel length is simulated by ensemble Monte Carlo method. The photoresponse is simulated under the effect of picosecond laser pulses with 532 and 650 nm wavelengths at 5⋅1010 and 1011 W/m2 intensity. The current decay and the dynamics of generated charge carriers in the transistor channel are studied.
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