High-performance AIIIBV photodetector for on-chip optical interconnects

Abstract

The development of AIIIBV photodetectors with subpicosecond response time seems to be one of core problems in modern optoelectronics. Its solution is required, in particular, for the implementation of high-speed and high-level optical interconnections in ultra-large-scale integrated circuits. Previously, we proposed the concept of a photodetector with controlled relocation of carrier density peaks whose structure allows for mobility and lifetime modulation and, as a result, reduction of back-edge photocurrent lag in photosensitive p-i-n heterojunction. In this paper, we perform the analysis of electron and hole transport in the aforementioned sensor using a time-domain drift-diffusion semiclassical model. Numerical solution of the system that contains the two-dimensional continuity and Poisson equations allows us to evaluate key characteristics of the photodetector with controlled relocation and to modify its structure and photoreceiver circuit reasonably.