Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics最新文献

{"title":"High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3.","authors":"Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Dan Neal, Josephine F Esquivel-Upshaw, Stephen J Pearton","doi":"10.1116/6.0003370","DOIUrl":"10.1116/6.0003370","url":null,"abstract":"<p><p>The prevalence of breast cancer in women underscores the urgent need for innovative and efficient detection methods. This study addresses this imperative by harnessing salivary biomarkers, offering a noninvasive and accessible means of identifying breast cancer. In this study, commercially available disposable based strips similar to the commonly used glucose detection strips were utilized and functionalized to detect breast cancer with biomarkers of HER2 and CA15-3. The results demonstrated limits of detection for these two biomarkers reached as low as 1 fg/ml much lower than those of conventional enzyme-linked immunosorbent assay in the range of 1∼4 ng/ml. By employing a synchronized double-pulse method to apply 10 of 1.2 ms voltage pulses to the electrode of sensing strip and drain electrode of the transistor for amplifying the detected signal, and the detected signal was the average of 10 digital output readings corresponding to those 10 voltage pulses. The sensor sensitivities were achieved approximately 70/dec and 30/dec for HER2 and CA15-3, respectively. Moreover, the efficiency of this novel technique is underscored by its swift testing time of less than 15 ms and its minimal sample requirement of only 3 <i>μ</i>l of saliva. The simplicity of operation and the potential for widespread public use in the future position this approach as a transformative tool in the early detection of breast cancer. This research not only provides a crucial advancement in diagnostic methodologies but also holds the promise of revolutionizing public health practices.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"42 2","pages":"023202"},"PeriodicalIF":1.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10866624/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139742245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Developing Single Layer MOS Quantum Dots for Diagnostic Qubits.","authors":"Yanxue Hong, A N Ramanayaka, Ryan Stein, M D Stewart, J M Pomeroy","doi":"10.1116/6.0000549","DOIUrl":"10.1116/6.0000549","url":null,"abstract":"<p><p>The design, fabrication and characterization of single metal gate layer, metal-oxide-semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a preliminary solution to a longer term goal of a qubit platform for intercomparison between materials or for in-line diagnostics, and to provide a testbed for establishing classical measurements predictive of coherence performance. For this stage, we seek a robust MOS design that is compatible with wafer and chip architectures, that has a reduced process overhead and is sufficiently capable of challenging and advancing our measurement capabilities. In this report, we present our initial batch of silicon MOS devices using a single gate layer, which have not exhibited any failures with gate voltage excursions > 10 V, but do exhibit the reduced electrostatic control expected of a single gate layer design. We observe quantum dot formation, capacitive charge sensing between channels, and reasonable effective electron temperatures that enable spin qubit studies. The costs and benefits of the trade-off between device performance and fabrication efficiency will be discussed, as well as opportunities for future improvements.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"39 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8269032/pdf/nihms-1700903.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"39174579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Detecting nanoscale contamination in semiconductor fabrication using through-focus scanning optical microscopy.","authors":"Min-Ho Rim, Emil Agocs, Ronald Dixson, Prem Kavuri, András E Vladár, Ravi Kiran Attota","doi":"10.1116/6.0000352","DOIUrl":"10.1116/6.0000352","url":null,"abstract":"<p><p>This paper reports high-throughput, light-based, through-focus scanning optical microscopy (TSOM) for detecting industrially relevant sub-50 nm tall nanoscale contaminants. Measurement parameter optimization to maximize the TSOM signal using optical simulations made it possible to detect the nanoscale contaminants. Atomic force and scanning electron microscopies were used as reference methods for comparison.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"38 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8201524/pdf/nihms-1670580.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"39235483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Time multiplexed deep reactive ion etching of germanium and silicon-A comparison of mechanisms and application to x-ray optics.","authors":"Vincent J Genova,&nbsp;David N Agyeman-Budu,&nbsp;Arthur R Woll","doi":"10.1116/1.4991875","DOIUrl":"https://doi.org/10.1116/1.4991875","url":null,"abstract":"<p><p>Although the mechanisms of deep reactive ion etching (DRIE) of silicon have been reported extensively, very little by comparison has been discussed concerning DRIE of germanium. By directly comparing silicon and germanium etching in a time multiplexed DRIE process, the authors extract significant differences in etch mechanisms from a design of experiment and discuss how these differences are relevant to the design and fabrication of silicon and germanium collimating channel array x-ray optics. The differences are illuminated by characteristics such as reactive ion etching (RIE)-lag, aspect ratio dependent etching, and sidewall passivation. Specifically, the authors demonstrate the more severe nature of RIE-lag in germanium, especially at aspect ratios exceeding 13:1. In addition, the differences in the profile evolution between silicon and germanium are shown to be a result of differences in sidewall passivation. There is also a correlation between the different sidewall passivation and the inherent lack of scalloping in the case of germanium DRIE.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"36 1","pages":"011205"},"PeriodicalIF":0.0,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4991875","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35736341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Minimizing open-loop piezoactuator nonlinearity artifacts in atomic force microscope measurements.","authors":"Chi-Fu Yen,&nbsp;Sanjeevi Sivasankar","doi":"10.1116/1.4994315","DOIUrl":"https://doi.org/10.1116/1.4994315","url":null,"abstract":"<p><p>Atomic force microscopes (AFMs) are widely used to study molecular interactions with piconewton force sensitivity. In an AFM, interaction forces are measured by reflecting a laser beam off a cantilever onto a position sensitive detector and monitoring cantilever deflection. Precise measurements of interaction forces rely on accurately determining the optical lever sensitivity, i.e., the relationship between cantilever deflection and changes in detector voltage. The optical lever sensitivity is measured by pressing the cantilever against a hard substrate using a piezoactuator and recording the resulting change in detector voltage. However, nonlinearities in the motion of commonly used open-loop piezo actuators introduce significant errors in measured optical lever sensitivities. Here, the authors systematically characterize the effect of piezo actuator hysteresis and creep on errors in optical lever sensitivity and identify measurement conditions that minimize these errors.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"35 5","pages":"053201"},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4994315","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35494834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial reactions at Fe/topological insulator spin contacts.","authors":"Sarmita Majumder,&nbsp;Karalee Jarvis,&nbsp;Sanjay K Banerjee,&nbsp;Karen L Kavanagh","doi":"10.1116/1.4991331","DOIUrl":"https://doi.org/10.1116/1.4991331","url":null,"abstract":"<p><p>The authors study the composition and abruptness of the interfacial layers that form during deposition and patterning of a ferromagnet, Fe on a topological insulator (TI), Bi₂Se₃, Bi₂Te₃, and SiO_x/Bi₂Te₃. Such structures are potentially useful for spintronics. Cross-sectional transmission electron microscopy, including interfacial elemental mapping, confirms that Fe reacts with Bi₂Se₃ near room temperature, forming an abrupt 5 nm thick FeSe_0.92 single crystalline binary phase, predominantly (001) oriented, with lattice fringe spacing of 0.55 nm. In contrast, Fe/Bi₂Te₃ forms a polycrystalline Fe/TI interfacial alloy that can be prevented by the addition of an evaporated SiO_x separating Fe from the TI.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"35 4","pages":"04F105"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4991331","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35173750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.","authors":"Rui Dong,&nbsp;Irma Kuljanishvili","doi":"10.1116/1.4982736","DOIUrl":"https://doi.org/10.1116/1.4982736","url":null,"abstract":"<p><p>Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"35 3","pages":"030803"},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4982736","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35494835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Clinical probe utilizing surface enhanced Raman scattering.","authors":"Jeonghwan Kim,&nbsp;Dooyoung Hah,&nbsp;Theda Daniels-Race,&nbsp;Martin Feldman","doi":"10.1116/1.4896479","DOIUrl":"https://doi.org/10.1116/1.4896479","url":null,"abstract":"<p><p>Conventional Raman scattering is a well-known technique for detecting and identifying complex molecular samples. In surface enhanced Raman scattering, a nanorough metallic surface close to the sample enormously enhances the Raman signal. In previous work, the metallic surface was a thin layer of gold deposited on a rough transparent epoxy substrate. The advantage of the clear substrate was that the Raman signal could be obtained by passing light through the substrate, on to opaque samples simply placed against its surface. In this work, a commercially available Raman spectrometer was coupled to a distant probe. Raman signals were obtained from the surface, and from the interior, of a solid specimen located more than 1 m away from the spectrometer. The practical advantage of this arrangement is that it opens up surface enhanced Raman spectrometry to a clinical environment, with a patient simply sitting or lying near the spectrometer.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"32 6","pages":"06FD02"},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4896479","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"32748620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanorough gold for enhanced Raman scattering.","authors":"Jeonghwan Kim,&nbsp;Kyung-Nam Kang,&nbsp;Anirban Sarkar,&nbsp;Pallavi Malempati,&nbsp;Dooyoung Hah,&nbsp;Theda Daniels-Race,&nbsp;Martin Feldman","doi":"10.1116/1.4826701","DOIUrl":"https://doi.org/10.1116/1.4826701","url":null,"abstract":"<p><p>Conventional Raman scattering is a workhorse technique for detecting and identifying complex molecular samples. In surface enhanced Raman scattering, a nanorough metallic surface close to the sample enhances the Raman signal enormously. In this work, the surface is on a clear epoxy substrate. The epoxy is cast on a silicon wafer, using 20 nm of gold as a mold release. This single step process already produces useful enhanced Raman signals. However, the Raman signal is further enhanced by (1) depositing additional gold on the epoxy substrate and (2) by using a combination of wet and dry etches to roughen the silicon substrate before casting the epoxy. The advantage of a clear substrate is that the Raman signal may be obtained by passing light through the substrate, with opaque samples simply placed against the surface. Results were obtained with solutions of Rhodamine 6G in deionized water over a range of concentrations from 1 nM to 1 mM. In all cases, the signal to noise ratio was greater than 10:1.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"31 6","pages":"6FE02"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4826701","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"31968795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bifunctional nanoarrays for probing the immune response at the single-molecule level.","authors":"Haogang Cai,&nbsp;David Depoil,&nbsp;Matteo Palma,&nbsp;Michael P Sheetz,&nbsp;Michael L Dustin,&nbsp;Shalom J Wind","doi":"10.1116/1.4823764","DOIUrl":"https://doi.org/10.1116/1.4823764","url":null,"abstract":"<p><p>Bifunctional nanoarrays were created to simulate the immunological synapse and probe the T-cell immune response at the single-molecule level. Sub-5 nm AuPd nanodot arrays were fabricated using both e-beam and nanoimprint lithography. The nanoarrays were then functionalized by two costimulatory molecules: antibody UCHT1 Fab, which binds to the T-cell receptor (TCR) and activates the immune response, bound to metallic nanodots; and intercellular adhesion molecule-1, which enhances cell adhesion, on the surrounding area. Initial T-cell experiments show successful attachment and activation on the bifunctional nanoarrays. This nanoscale platform for single-molecule control of TCR in living T-cells provides a new approach to explore how its geometric arrangement affects T-cell activation and behavior, with potential applications in immunotherapy. This platform also serves as a general model for single-molecule nanoarrays where more than one molecular species is required.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":"31 6","pages":"6F902"},"PeriodicalIF":0.0,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4823764","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"31968794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}