Detecting nanoscale contamination in semiconductor fabrication using through-focus scanning optical microscopy.

Abstract

This paper reports high-throughput, light-based, through-focus scanning optical microscopy (TSOM) for detecting industrially relevant sub-50 nm tall nanoscale contaminants. Measurement parameter optimization to maximize the TSOM signal using optical simulations made it possible to detect the nanoscale contaminants. Atomic force and scanning electron microscopies were used as reference methods for comparison.