综述:过渡金属二硫族化合物异质结构体系的制备进展。

IF 1.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Rui Dong, Irma Kuljanishvili
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引用次数: 107

摘要

过渡金属二硫族化合物(TMDC)半导体由于其丰富的电子/光子特性以及在基础研究和新型器件应用中的重要性而引起了人们的广泛关注。由于弱范德华层间相互作用的性质,这些材料为建立高质量和原子尖锐的异质结构提供了独特的机会。TMDCs的可变电子特性(例如,带隙及其对准)为设计新型电子和光电子器件提供了平台。TMDC异质结构集成到半导体工业目前阻碍了有限的选择可靠的生产方法。迄今为止研究的许多令人兴奋的特性和器件结构在很大程度上是基于块体TMDC晶体的剥离方法。这些方法通常很难考虑大规模集成过程,因此,不同制造策略的持续发展对于该领域的进一步发展至关重要。本文综述了近年来在TMDC异质结构制备方面的研究进展。作者将回顾几种迄今为止最常用的可控异质结构形成方法。其中一个重点将是通过热化学气相沉积方法制造的TMDC异质结构,该方法允许控制所得到的材料,单个层和异质结构。另一个重点将是TMDCs的选择性生长技术。作者将讨论传统和非常规的制造方法及其优缺点,并对未来的改进提供一些指导。将介绍掩模辅助和无掩模方法,包括传统的光刻技术(光刻或电子束光刻)和一些非常规的方法,如聚焦离子束和最近开发的直接写入图像化方法,这些方法被证明有希望制造高质量的TMDC异质结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.

Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures.

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来源期刊
CiteScore
2.70
自引率
0.00%
发文量
146
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