Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics最新文献

{"title":"Review Article: Synthesis, properties, and applications of fluorescent diamond particles.","authors":"Olga A Shenderova, Alexander I Shames, Nicholas A Nunn, Marco D Torelli, Igor Vlasov, Alexander Zaitsev","doi":"10.1116/1.5089898","DOIUrl":"10.1116/1.5089898","url":null,"abstract":"<p><p>Diamond particles containing color centers-fluorescent crystallographic defects embedded within the diamond lattice-outperform other classes of fluorophores by providing a combination of unmatched photostability, intriguing coupled magneto-optical properties, intrinsic biocompatibility, and outstanding mechanical and chemical robustness. This exceptional combination of properties positions fluorescent diamond particles as unique fluorophores with emerging applications in a variety of fields, including bioimaging, ultrasensitive metrology at the nanoscale, fluorescent tags in industrial applications, and even potentially as magnetic resonance imaging contrast agents. However, production of fluorescent nanodiamond (FND) is nontrivial, since it requires irradiation with high-energy particles to displace carbon atoms and create vacancies-a primary constituent in the majority color centers. In this review, centrally focused on material developments, major steps of FND production are discussed with emphasis on current challenges in the field and possible solutions. The authors demonstrate how the combination of fluorescent spectroscopy and electron paramagnetic resonance provides valuable insight into the types of radiation-induced defects formed and their evolution upon thermal annealing, thereby guiding FND performance optimization. A recent breakthrough process allowing for production of fluorescent diamond particles with vibrant blue, green, and red fluorescence is also discussed. Finally, the authors conclude with demonstrations of a few FND applications in the life science arena and in industry.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":1.5,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6461556/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"37193699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experiment-based modelling of a vapor draw ampoule used for low-volatility precursors.","authors":"Brent A Sperling, James E Maslar","doi":"10.1116/1.5125446","DOIUrl":"10.1116/1.5125446","url":null,"abstract":"<p><p>Delivery of low-volatility precursors is a continuing challenge for chemical vapor deposition and atomic layer deposition processes used for microelectronics manufacturing. To aid in addressing this problem, we have recently developed an inline measurement capable of monitoring precursor delivery. Motivated by a desire to better understand the origins of what is now observable, this study uses computational fluid dynamics and a relatively simple model to simulate the delivery of pentakis(dimethylamido)tantalum (PDMAT) from a commercial vapor draw ampoule. Parameters used in the model are obtained by fitting the performance of the ampoule to a limited dataset of PDMAT delivery rates obtained experimentally using a non-dispersive infrared sensor. The model shows good agreement with a much larger experimental dataset over a range of conditions in both pulsed and continuously flowing operation. The combined approach of experiment and simulation provides a means to understand the phenomena occurring during precursor delivery both quantitatively and qualitatively.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.5125446","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"37703174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Time multiplexed deep reactive ion etching of germanium and silicon-A comparison of mechanisms and application to x-ray optics.","authors":"Vincent J Genova,&nbsp;David N Agyeman-Budu,&nbsp;Arthur R Woll","doi":"10.1116/1.4991875","DOIUrl":"https://doi.org/10.1116/1.4991875","url":null,"abstract":"<p><p>Although the mechanisms of deep reactive ion etching (DRIE) of silicon have been reported extensively, very little by comparison has been discussed concerning DRIE of germanium. By directly comparing silicon and germanium etching in a time multiplexed DRIE process, the authors extract significant differences in etch mechanisms from a design of experiment and discuss how these differences are relevant to the design and fabrication of silicon and germanium collimating channel array x-ray optics. The differences are illuminated by characteristics such as reactive ion etching (RIE)-lag, aspect ratio dependent etching, and sidewall passivation. Specifically, the authors demonstrate the more severe nature of RIE-lag in germanium, especially at aspect ratios exceeding 13:1. In addition, the differences in the profile evolution between silicon and germanium are shown to be a result of differences in sidewall passivation. There is also a correlation between the different sidewall passivation and the inherent lack of scalloping in the case of germanium DRIE.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2018-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4991875","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35736341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Minimizing open-loop piezoactuator nonlinearity artifacts in atomic force microscope measurements.","authors":"Chi-Fu Yen,&nbsp;Sanjeevi Sivasankar","doi":"10.1116/1.4994315","DOIUrl":"https://doi.org/10.1116/1.4994315","url":null,"abstract":"<p><p>Atomic force microscopes (AFMs) are widely used to study molecular interactions with piconewton force sensitivity. In an AFM, interaction forces are measured by reflecting a laser beam off a cantilever onto a position sensitive detector and monitoring cantilever deflection. Precise measurements of interaction forces rely on accurately determining the optical lever sensitivity, i.e., the relationship between cantilever deflection and changes in detector voltage. The optical lever sensitivity is measured by pressing the cantilever against a hard substrate using a piezoactuator and recording the resulting change in detector voltage. However, nonlinearities in the motion of commonly used open-loop piezo actuators introduce significant errors in measured optical lever sensitivities. Here, the authors systematically characterize the effect of piezo actuator hysteresis and creep on errors in optical lever sensitivity and identify measurement conditions that minimize these errors.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4994315","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35494834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial reactions at Fe/topological insulator spin contacts.","authors":"Sarmita Majumder,&nbsp;Karalee Jarvis,&nbsp;Sanjay K Banerjee,&nbsp;Karen L Kavanagh","doi":"10.1116/1.4991331","DOIUrl":"https://doi.org/10.1116/1.4991331","url":null,"abstract":"<p><p>The authors study the composition and abruptness of the interfacial layers that form during deposition and patterning of a ferromagnet, Fe on a topological insulator (TI), Bi₂Se₃, Bi₂Te₃, and SiO_x/Bi₂Te₃. Such structures are potentially useful for spintronics. Cross-sectional transmission electron microscopy, including interfacial elemental mapping, confirms that Fe reacts with Bi₂Se₃ near room temperature, forming an abrupt 5 nm thick FeSe_0.92 single crystalline binary phase, predominantly (001) oriented, with lattice fringe spacing of 0.55 nm. In contrast, Fe/Bi₂Te₃ forms a polycrystalline Fe/TI interfacial alloy that can be prevented by the addition of an evaporated SiO_x separating Fe from the TI.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4991331","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35173750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimized process for fabrication of free-standing silicon nanophotonic devices.","authors":"Paul Seidler","doi":"10.1116/1.4983173","DOIUrl":"10.1116/1.4983173","url":null,"abstract":"<p><p>A detailed procedure is presented for fabrication of free-standing silicon photonic devices that accurately reproduces design dimensions while minimizing surface roughness. By reducing charging effects during inductively coupled-plasma reactive ion etching, undercutting in small, high-aspect ratio openings is reduced. Slot structures with a width as small as 40 nm and an aspect ratio of 5.5:1 can be produced with a nearly straight, vertical sidewall profile. Subsequent removal of an underlying sacrificial silicon dioxide layer by wet-etching to create free-standing devices is performed under conditions which suppress attack of the silicon. Slotted one-dimensional photonic crystal cavities are used as sensitive test structures to demonstrate that performance specifications can be reached without iteratively adapting design dimensions; optical resonance frequencies are within 1% of the simulated values and quality factors on the order of 10⁵ are routinely attained.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429187/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35102780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.","authors":"Rui Dong,&nbsp;Irma Kuljanishvili","doi":"10.1116/1.4982736","DOIUrl":"https://doi.org/10.1116/1.4982736","url":null,"abstract":"<p><p>Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4982736","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"35494835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Uranium Ion Yields from Monodisperse Uranium Oxide Particles.","authors":"Nicholas Sharp, John D Fassett, David S Simons","doi":"10.1116/1.4942612","DOIUrl":"10.1116/1.4942612","url":null,"abstract":"Secondary ion mass spectrometry (SIMS) plays an important role in nuclear forensics through its ability to identify isotopic ratios of particles accurately and precisely from samples obtained by inspectors [Boulyga et al., J. Anal. At. Spectrom. 30, 1469 (2015)]. As the particle mass can be on the order of subpicograms, it is important to maximize the sample utilization efficiency of U+ to make high-quality isotopic measurements. The influence of primary ion beam species and polarity on U+ sample utilization efficiency has been previously investigated by Ranebo et al. [J. Anal. At. Spectrom. 24, 277 (2009)]. However, the effect of sample substrate on uranium ion production efficiency and sputtering profile has not been investigated. This work will explore those influences on sample utilization efficiency by analyzing monodisperse uranium oxide microspheres deposited onto graphite and silicon planchets. The particles were mapped using an automated scanning electron microscope, and their coordinates were co...","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4942612","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"34601627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Alkaline and ultrasonic dissolution of biological materials for trace silicon determination.","authors":"Robert D Viveros, Alexander Liberman, William C Trogler, Andrew C Kummel","doi":"10.1116/1.4916627","DOIUrl":"10.1116/1.4916627","url":null,"abstract":"<p><p>A simple method for trace elemental determination in biological tissue has been developed. Novel nanomaterials with biomedical applications necessitate the determination of the <i>in vivo</i> fate of the materials to understand their toxicological profile. Hollow iron-doped calcined silica nanoshells have been used as a model to demonstrate that potassium hydroxide and bath sonication at 50 °C can extract elements from alkaline-soluble nanomaterials. After alkali digestion, nitric acid is used to adjust the <i>p</i>H into a suitable range for analysis using techniques such as inductively coupled plasma optical emission spectrometry which require neutral or acidic analytes. In chicken liver phantoms injected with the nanoshells, 96% of the expected silicon concentration was detected. This value was in good agreement with the 94% detection efficiency of nanoshells dissolved in aqueous solution as a control for potential sample matrix interference. Nanoshell detection was further confirmed in a mouse 24 h after intravenous administration; the measured silica above baseline was 35 times greater or more than the standard deviations of the measurements. This method provides a simple and accurate means to quantify alkaline-soluble nanomaterials in biological tissue.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385096/pdf/JVTBD9-000033-031803_1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"33247563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Clinical probe utilizing surface enhanced Raman scattering.","authors":"Jeonghwan Kim,&nbsp;Dooyoung Hah,&nbsp;Theda Daniels-Race,&nbsp;Martin Feldman","doi":"10.1116/1.4896479","DOIUrl":"https://doi.org/10.1116/1.4896479","url":null,"abstract":"<p><p>Conventional Raman scattering is a well-known technique for detecting and identifying complex molecular samples. In surface enhanced Raman scattering, a nanorough metallic surface close to the sample enormously enhances the Raman signal. In previous work, the metallic surface was a thin layer of gold deposited on a rough transparent epoxy substrate. The advantage of the clear substrate was that the Raman signal could be obtained by passing light through the substrate, on to opaque samples simply placed against its surface. In this work, a commercially available Raman spectrometer was coupled to a distant probe. Raman signals were obtained from the surface, and from the interior, of a solid specimen located more than 1 m away from the spectrometer. The practical advantage of this arrangement is that it opens up surface enhanced Raman spectrometry to a clinical environment, with a patient simply sitting or lying near the spectrometer.</p>","PeriodicalId":38110,"journal":{"name":"Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1116/1.4896479","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"32748620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}