利用自掩膜蚀刻技术在多晶硅晶片表面形成纳米锥体以提高多晶硅太阳电池效率。

IF 1.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hsin-Han Lin, Wen-Hwa Chen, Franklin C-N Hong
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引用次数: 11

摘要

在多晶硅片表面制造纳米结构,减少太阳反射,增强太阳吸收,从而提高太阳能电池的光电转换效率。研究了自掩蔽反应离子刻蚀(RIE)技术在硅表面直接制备纳米结构,而不使用掩蔽工艺。在RIE系统中,在120-130 mTorr的典型压力下,用射频等离子体激活含有氯(Cl2)、六氟化硫(SF6)和氧(O2)的活性气体来制造纳米级金字塔。在蚀刻过程中,通过改变SF6、Cl2和O2混合气体的组成,直接蚀刻6-10 min,形成多晶硅片的表面纳米结构。然后用酸(KOH:H2O = 1:1)处理1 min,去除干蚀刻引起的损伤层(100 nm)。损伤层通过影响表层的电学性能显著降低了太阳能电池的效率。酸处理后多晶硅衬底表面的反射率显著降低,形成亚波长增透结构,可将太阳能电池效率提高16.27%,高于湿法刻蚀法的15.56%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique.

The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120-130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6-10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm2) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching.

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CiteScore
2.70
自引率
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发文量
146
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