Time multiplexed deep reactive ion etching of germanium and silicon-A comparison of mechanisms and application to x-ray optics.

IF 1.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Vincent J Genova, David N Agyeman-Budu, Arthur R Woll
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引用次数: 2

Abstract

Although the mechanisms of deep reactive ion etching (DRIE) of silicon have been reported extensively, very little by comparison has been discussed concerning DRIE of germanium. By directly comparing silicon and germanium etching in a time multiplexed DRIE process, the authors extract significant differences in etch mechanisms from a design of experiment and discuss how these differences are relevant to the design and fabrication of silicon and germanium collimating channel array x-ray optics. The differences are illuminated by characteristics such as reactive ion etching (RIE)-lag, aspect ratio dependent etching, and sidewall passivation. Specifically, the authors demonstrate the more severe nature of RIE-lag in germanium, especially at aspect ratios exceeding 13:1. In addition, the differences in the profile evolution between silicon and germanium are shown to be a result of differences in sidewall passivation. There is also a correlation between the different sidewall passivation and the inherent lack of scalloping in the case of germanium DRIE.

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锗和硅的时间复用深度反应离子刻蚀——机理比较及其在x射线光学中的应用。
虽然硅的深度反应离子刻蚀(DRIE)机理已被广泛报道,但对锗的深度反应离子刻蚀(DRIE)机理的讨论却很少。通过直接比较时间复用DRIE工艺中硅和锗的蚀刻,作者从实验设计中提取了蚀刻机制的显著差异,并讨论了这些差异如何与硅和锗准直通道阵列x射线光学系统的设计和制造相关。反应性离子蚀刻(RIE)滞后、依赖宽高比的蚀刻和侧壁钝化等特性阐明了两者的差异。具体来说,作者证明了锗中更严重的rie滞后性质,特别是在纵横比超过13:1时。此外,硅和锗在剖面演化上的差异是由于侧壁钝化的差异造成的。在锗DRIE的情况下,不同的侧壁钝化与固有的扇贝缺失之间也存在相关性。
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来源期刊
CiteScore
2.70
自引率
0.00%
发文量
146
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