2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献

{"title":"VTH & Gm, max Instability Analysis of the Multiple GaN Chips based Cascode Power Module","authors":"S. Elangovan, Stone Cheng, Jia-Hao Yao, E. Chang","doi":"10.1109/IPFA55383.2022.9915768","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915768","url":null,"abstract":"In this work, we present developed and tested a multiple-GaN-chips based cascode power module to scale up the power ratings. This cascode power module consists of two switching elements that connect multi-GaN-chips of AlGaN/GaN-on-Si HEMT cells with low voltage Si MOSFETs in series. As an electrical characterizations, static output and transfer characteristics of the module were tested at room temperature and with reverse-leakage characteristics, the constructed cascode power module has a blocking voltage of more than 550 V. Following electrical characteristics, we present an extensive study of threshold voltage (VTH) and transconductance instability (Gm, max) of the cascode power module under positive and negative gate bias temperature instability experiments. The trapping and de-trapping of electrons from pre-existing oxide traps lead the power module to negative and positive VTH instabilities and Gm, max degradations. These findings on performance and instability open the path for a better understanding of enhancements and failure causes, which will help to accelerate the growth of emerging GaN cascode technologies.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"435 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124246979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Manufacturing of GaAs Aspherical SILs","authors":"Ikuo Arata, H. Terada, M. Vervaeke, D. Rosseel, H. Thienpont","doi":"10.1109/IPFA55383.2022.9915723","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915723","url":null,"abstract":"A solid immersion lens (SIL) is an indispensable tool for semiconductor failure analysis. SILs can dramatically enhance the optical resolution limit by increasing the numerical aperture (NA) of the objective lens. Normally SILs are made of Si because the semiconductor wafer material consists of Si. Si has a very high refractive index (about 3.5) and it makes the resolution limit 3.5 times higher than that of normal lenses. However, recently the technology node of cutting-edge devices became too small for Si-SILs. To overcome the resolution problem, short wavelength lasers have been introduced to get a higher resolution.[1], [2], [3] Unfortunately Si is only transparent for wavelengths longer than 1100nm. GaAs and GaP on the other hand are transparent at shorter wavelengths than Si, while their refractive index is equivalent to that of Si. Designing and manufacturing aspherically shaped SILs is however needed to make it possible to use these materials as SILs, unless the backing objective is redesigned and optimized for the SIL. We have designed and manufactured a GaAs-SIL with aspherical shape and demonstrated diffraction limited optical imaging quality while using a backing objective lens with no aberration correction.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122560704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability study of hydrogel-based flexible supercapacitor","authors":"Yuchong Qiao, Xinyue Wu, Chaolun Wang, Xing Wu","doi":"10.1109/IPFA55383.2022.9915728","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915728","url":null,"abstract":"With the development of electronic technology, wearable devices are growing rapidly. The energy devices matching the power supply requirement of wearable devices with flexibility property become a hot topic. Flexible supercapacitors are advanced energy devices that present high power density, fast charging rate and bendable characteristic. The flexible supercapacitors are assembled by flexible electrode and electrolyte. The chemical stability of the electrolyte with time and complex environments, such as mechanical stress and variation of temperatures, has to be studied to guarantee a good performance. In this work, a flexible supercapacitor composed of carbon fiber cloth as the electrode and polyvinyl alcohol (PVA) as the electrolyte is prepared. The electrode is activated by laser ablation method. The reliability of the supercapacitor is comprehensively studied in the aspects of electrolyte, temperature and mechanical deformation. The results show that the electrolyte stability is related to the crosslinking reaction, which could be regulated by the amount of glutaraldehyde added in PVA. In addition, the supercapacitor prepared by 0.1 ml glutaraldehyde (GA) presents good reliability under the conditions of the increased temperature and mechanical deformation.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128527381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"BEoL Stack Failure Mode Evaluation Utilizing Micromechanical Testing and FEM Modelling","authors":"J. Silomon, A. Clausner, E. Zschech","doi":"10.1109/IPFA55383.2022.9915739","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915739","url":null,"abstract":"In this work, the results of a mechanical BEoL (back end of line) stack failure mode evaluation study of a high-end microchip are presented. Deploying micromechanical testing approaches enables the determination of different failure modes and, in some cases and with the right methods, the identification of the location of damage initiation as well as an estimation of damage propagation. However, it is not possible to determine the mechanical stress conditions inside the BEoL stack which cause these damages experimentally. To obtain this information, it is required to develop and deploy an FEM (Finite Element Method) simulation model. In this work, the experimental results of the application of two micromechanical loading methods to induce three different failure modes into a BEoL stack are presented. These results have partially been introduced in the previous studies [1], [2], and [3] but are put into perspective and aligned with FEM simulation results to obtain a more holistic understanding of the occurring damage modes and the related mechanical conditions. The FEM simulations have been utilized to quantify the critical values and location of mechanical stresses inside of the BEoL stack which result in the mechanical failure modes. A Cu-pillar shear approach has been deployed as well as a soldering and tensile loading approach. These methods have been introduced in a detailed manner in [4]. Sub-critical modifications of these Cu-pillar loading experiments as described in [2] and [4] in which AE (acoustic emission) was utilized as a damage indicator, have been deployed as well to determine the damage initiation location and progression through the BEoL stack. Based on this combined method consisting of the experimental approaches and the related FEM simulations, mechanical failure models of the investigated BEoL stack could be derived. These include the location of damage initiation and the related mechanical stresses as well as an estimated damage progression. A specific design optimization is suggested based on the results presented in this study and evaluated deploying an additional FEM simulation with the mechanical loading conditions of the tensile failure mode.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"51 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132151806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Degradation Behavior and Analysis of GaN HEMTs Under High Power Microwave Pulse","authors":"Shuo Zhang, Lei Liu, Yi Qiang Chen, Zhijian Li, Zhaohui Wu, Bin Li","doi":"10.1109/IPFA55383.2022.9915753","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915753","url":null,"abstract":"In this work, the effect of electromagnetic pulses on the performance of AlGaN/GaN HEMTs was studied, by building a high-power microwave pulse (HPM) experimental platform. Repeated experiments with multiple devices show that the electrical characteristics of the devices changed after HPM stress. In order to reduce the impact of device recovery, the data of 4 hours after stress are selected for analysis. The experimental results show that the gate leakage current is reduced by an order of magnitude, and the transfer and output characteristic curve changes, the threshold voltage has a 0.25V positive shift after stress. Moreover, in the process of measuring the S-parameters of the devices, TRL calibration kits were designed to de-embed, and the measurement results show that the S-parameters of device have changed significantly. In addition, it is found that defects are a major factor in degradation. As current high-integration chips are susceptible to electromagnetic pulses, this experiment may provide useful reference for RF device design.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"283 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131785896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Site-Specific 2D carrier profiling in Si devices by Scanning Spreading Resistance Microscopy (SSRM)","authors":"W. Kuo, Yuan Wei Li, Chun Ming Tsai, Dong Hong Chen","doi":"10.1109/IPFA55383.2022.9915734","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915734","url":null,"abstract":"As semiconductor devices are scaling down, understanding the two-dimensional carrier profile is vital to improving the overall performance of various silicon devices, and crucial when conducting failure analysis. In this paper, we demonstrated several site-specific 2D carrier profiles, for both n-MOS and p-MOS in static random access memory(SRAM) devices using scanning spreading resistance microscopy (SSRM). For the purpose of observing the site-specific characteristics of SRAM devices, we used focus ion beam(FIB) in our sample preparation. To further improve the positioning accuracy to within a dozen nanometers, the full FIB pick up method was also adopted. This particular approach allowed us to better conduct site-specific observations.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134431935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cs+ Reactive Sputter Depth Profile for Ultrathin Metal/Metal-Oxide Composite Film Stack","authors":"H. Teo, Yun Wang, K. Ong, R. R. Nistala, Zhiqiang Mo","doi":"10.1109/IPFA55383.2022.9915779","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915779","url":null,"abstract":"In the semiconductor manufacturing industry, Time-of-flight Secondary Ion Mass Spectrometry is a well-known material analysis technique that is widely used for depth profiling. In this paper, a comparison study of metal/metal oxide depth profile was performed using Cs+ reactive sputtering in negative and positive ion mode analysis. The results showed that Cs+ sputter in positive ion depth profile was relatively better than negative ion mode that the real profile was achieved without artifact. In addition, higher secondary ion yields for the metal/metal oxide elements was observed.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115901788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Decoupling Sub-micron Resolution and Speed from Sample Size in 3D X-ray Imaging","authors":"S. H. Lau, S. Gul, J. Gelb, Tianzhu Qin, G. Zan, Katie Matusik, D. Vine, S. Lewis, W. Yun","doi":"10.1109/IPFA55383.2022.9915760","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915760","url":null,"abstract":"X-ray imaging (2D & 3D) has been one of the primary non-destructive analysis methods for electronic packages and printed circuit boards (PCB) for over three decades. The continually shrinking features and growth of heterogeneous packaging and wafer-level packaging drive urgent demand for even higher resolution but on larger samples, including larger packages and on wafers. Currently, gaps in non-destructive 2D and 3D imaging in failure analysis exist due to lack of resolution to resolve sub-micron defects typically found in most cracks or voids in microbumps less than 30 microns in diameter and on low contrast materials such as defects in organic substrates. The larger form factors of samples including modern heterogeneous packages, PCB, wafers adds yet another layer of difficulty, and submicron lengthscale defects on such samples are far beyond the resolution power of most existing 2D or 3D X-ray tools. Conventional, high resolution 3D X-ray tools are designed to inspect small packages, but as sample size increases, the time to detect small defects in large packages or PCB may run into several hours or days, rendering this application impractical. We describe a novel 3D X-ray tool that overcome the sample size and speed limitation of traditional X-ray imaging systems. Time to obtain a sub-micron resolution imaging on a region of interest in a package, pcb or 300 mm can be completed within a few minutes. The rapid multiresolution capabilities are also well suited for construction analysis or reverse engineering from packages to pcbs.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115980164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability of Power Devices with Copper Wire Bond","authors":"T. Pinili, Manny S. Ramos, Ginbert Manalo, G. Brizar, Koen Matthijs, Frederik Colle, Johan DeGreve, P. Kocourek, B. Cowell, J. Jensen, J. Mcglone, S. Hose, J. Gambino","doi":"10.1109/IPFA55383.2022.9915763","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915763","url":null,"abstract":"In this study, we evaluate yield and reliability for a smart power device fabricated in 0.35 μm technology. The wire bonds are formed with 50.8 micron (2 mil) diameter Pd-coated Cu wire. For a conventional wire bond process, there is a risk of damage to interconnect layers under the bond pads, resulting in yield loss and reliability failures. In contrast, by using a segmented wire bond process, the yield loss associated with bond pad damage is eliminated and highly reliable wire bond connections are achieved.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124295498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoprobing Technique using Additional Gate Biasing for Inaccessible Contact Structures","authors":"Wai Ming Goh, Linh Viet Vu, D. Zhu, T. P. Chua, M. K. Yau, Chi Eng Chow, Grace Tan, Hieu Nguyen","doi":"10.1109/IPFA55383.2022.9915738","DOIUrl":"https://doi.org/10.1109/IPFA55383.2022.9915738","url":null,"abstract":"The continual reduction of the technology node in IC process technology has prompted Failure Analysis (FA) to develop new IC defect capturing approaches. Nanoprobing is one of numerous FA processes that provides useful and accurate information for locating flaw areas. More advanced probing techniques have been developed as the IC process progresses to aid in the analysis of structures with inaccessible connections, allowing for early failure diagnosis. These probing approaches are provided in this work, together with experiments and case studies, demonstrating how Nanoprobe indirect probe may overcome obstacles in process and IC structures.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126530328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}