Reliability of Power Devices with Copper Wire Bond

Abstract

In this study, we evaluate yield and reliability for a smart power device fabricated in 0.35 μm technology. The wire bonds are formed with 50.8 micron (2 mil) diameter Pd-coated Cu wire. For a conventional wire bond process, there is a risk of damage to interconnect layers under the bond pads, resulting in yield loss and reliability failures. In contrast, by using a segmented wire bond process, the yield loss associated with bond pad damage is eliminated and highly reliable wire bond connections are achieved.