高功率微波脉冲作用下GaN hemt的降解行为及分析

Shuo Zhang, Lei Liu, Yi Qiang Chen, Zhijian Li, Zhaohui Wu, Bin Li
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摘要

本文通过建立高功率微波脉冲(HPM)实验平台,研究了电磁脉冲对AlGaN/GaN hemt性能的影响。多个器件的重复实验表明,HPM应力作用后器件的电特性发生了变化。为了减少设备恢复的影响,选取应力后4小时的数据进行分析。实验结果表明,栅极泄漏电流减小了一个数量级,传递和输出特性曲线发生变化,应力后阈值电压有0.25V的正位移。此外,在测量设备s参数的过程中,设计了TRL校准套件进行脱嵌,测量结果表明,设备s参数发生了明显变化。此外,还发现缺陷是导致退化的主要因素。针对当前高集成度芯片易受电磁脉冲影响的特点,本实验可为射频器件设计提供有益的参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Degradation Behavior and Analysis of GaN HEMTs Under High Power Microwave Pulse
In this work, the effect of electromagnetic pulses on the performance of AlGaN/GaN HEMTs was studied, by building a high-power microwave pulse (HPM) experimental platform. Repeated experiments with multiple devices show that the electrical characteristics of the devices changed after HPM stress. In order to reduce the impact of device recovery, the data of 4 hours after stress are selected for analysis. The experimental results show that the gate leakage current is reduced by an order of magnitude, and the transfer and output characteristic curve changes, the threshold voltage has a 0.25V positive shift after stress. Moreover, in the process of measuring the S-parameters of the devices, TRL calibration kits were designed to de-embed, and the measurement results show that the S-parameters of device have changed significantly. In addition, it is found that defects are a major factor in degradation. As current high-integration chips are susceptible to electromagnetic pulses, this experiment may provide useful reference for RF device design.
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