T. Pinili, Manny S. Ramos, Ginbert Manalo, G. Brizar, Koen Matthijs, Frederik Colle, Johan DeGreve, P. Kocourek, B. Cowell, J. Jensen, J. Mcglone, S. Hose, J. Gambino
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Reliability of Power Devices with Copper Wire Bond
In this study, we evaluate yield and reliability for a smart power device fabricated in 0.35 μm technology. The wire bonds are formed with 50.8 micron (2 mil) diameter Pd-coated Cu wire. For a conventional wire bond process, there is a risk of damage to interconnect layers under the bond pads, resulting in yield loss and reliability failures. In contrast, by using a segmented wire bond process, the yield loss associated with bond pad damage is eliminated and highly reliable wire bond connections are achieved.
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