Cs+ Reactive Sputter Depth Profile for Ultrathin Metal/Metal-Oxide Composite Film Stack

In the semiconductor manufacturing industry, Time-of-flight Secondary Ion Mass Spectrometry is a well-known material analysis technique that is widely used for depth profiling. In this paper, a comparison study of metal/metal oxide depth profile was performed using Cs+ reactive sputtering in negative and positive ion mode analysis. The results showed that Cs+ sputter in positive ion depth profile was relatively better than negative ion mode that the real profile was achieved without artifact. In addition, higher secondary ion yields for the metal/metal oxide elements was observed.