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Gas Microsensors Based on Cerium Oxide Modified Tungsten Oxide Nanowires 基于氧化铈修饰氧化钨纳米线的气体微传感器
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597067
M. Tomić, I. Gràcia, M. Salleras, E. Figueras, C. Cané, S. Vallejos
{"title":"Gas Microsensors Based on Cerium Oxide Modified Tungsten Oxide Nanowires","authors":"M. Tomić, I. Gràcia, M. Salleras, E. Figueras, C. Cané, S. Vallejos","doi":"10.1109/CDE.2018.8597067","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597067","url":null,"abstract":"A gas sensitive material consisting of tungsten oxide nanowires (NW s) modified with cerium oxide nanoparticles (NPs) was developed and integrated into micro machined transducing platforms via aerosol assisted chemical vapor deposition. Results validate the functionality of the sensors and demonstrate the enhancement of the sensing properties of tungsten oxide towards ethanol (EtOH) by its surface modification with cerium oxide. These results are attributed to the formation of heterojunctions which provides an electronic sensitization along the whole gas sensitive film.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124056217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication Process of Non-Linear Planar Diodes Based on GaN 基于氮化镓的非线性平面二极管的制备工艺
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596786
J. A. Novoa-López, Y. Lechaux, J. A. Delgado-Notario, V. Cierico, E. Diez, H. Sánchez-Martín, B. G. Vasallo, I. Íñiguez-de-la-Torre, J. Mateos, S. Pérez, T. González
{"title":"Fabrication Process of Non-Linear Planar Diodes Based on GaN","authors":"J. A. Novoa-López, Y. Lechaux, J. A. Delgado-Notario, V. Cierico, E. Diez, H. Sánchez-Martín, B. G. Vasallo, I. Íñiguez-de-la-Torre, J. Mateos, S. Pérez, T. González","doi":"10.1109/CDE.2018.8596786","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596786","url":null,"abstract":"In this work we report on the design, fabrication and characterization of Terahertz detectors based on the power handling properties of Gallium Nitride (GaN) and the Self Switching Diode (SSD) geometry. SSDs, featuring asymmetric channels defined by etching L-shape trenches, have shown excellent properties as direct THz detectors due to their nonlinear I-V curve. We have designed and fabricated SSDs integrated with bow-tie antennae for sub-terahertz radiation detection in free space and also with coplanar waveguide accesses to be able to perform the RF characterization of the devices.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125620435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET 纳米线MOSFET III-V栅极周围量子约束的紧凑建模
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597131
A. Abdelmoneam, B. Iñíguez, M. Fedawy
{"title":"Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET","authors":"A. Abdelmoneam, B. Iñíguez, M. Fedawy","doi":"10.1109/CDE.2018.8597131","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597131","url":null,"abstract":"In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130154221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs 动态蒙特卡罗模拟器表征Ni/HfO2/Si rram的电阻性开关和电荷传导
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597010
S. Aldana, P. García-Fernández, R. Romero-Záliz, M. González, F. Jiménez-Molinos, F. Campabadal, F. Gómez-Campos, J. Roldán
{"title":"A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs","authors":"S. Aldana, P. García-Fernández, R. Romero-Záliz, M. González, F. Jiménez-Molinos, F. Campabadal, F. Gómez-Campos, J. Roldán","doi":"10.1109/CDE.2018.8597010","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597010","url":null,"abstract":"A 3D kinetic Monte Carlo (kMC) simulation tool has been developed to study the resistive switching (RS) processes that allow Ni/HfO2/Si devices to work as non-volatile memories. The simulator is tuned with numerous experimental data and it can reproduce the device current in forming, set and reset processes, the cycle-to-cycle variability and other characteristics linked to the stochasticity of RS operation. The evolution of conductive filaments (CFs) for different RS cycles is analyzed in depth, as well as the filaments density and resistance.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127709567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Laser-Diffused P Emitters for Ge TPV Cells 用于锗TPV电池的激光扩散P发射体
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597048
A. Jiménez, A. Datas, D. Canteli, D. Munoz-Martin, M. Morales, C. Molpeceres, C. del Cañizo
{"title":"Laser-Diffused P Emitters for Ge TPV Cells","authors":"A. Jiménez, A. Datas, D. Canteli, D. Munoz-Martin, M. Morales, C. Molpeceres, C. del Cañizo","doi":"10.1109/CDE.2018.8597048","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597048","url":null,"abstract":"In this article we present the experimental optimization of thermophotovoltaic (TPV) cells fabricated by laser-diffused phosphorous emitters on p-Ge substrates. First, simulations done by PC1D software have helped to guide in the optimization process. Next, the emitter formation has been carried out experimentally by a fast and low thermal budget process based on excimer laser annealing in the melting regime of a phosphosilicate sol-gel layer deposited by spin coating. The n/p junction created has been characterized by Secondary Ion Mass Spectrometry (SIMS) and used to fabricate a TPV cell as a proof of concept.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122878594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Tunneling Times in Graphene FET: From Fundamental Physics to Practical Engineering 石墨烯场效应管的隧穿时间:从基础物理到实际工程
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597054
M. Villani, D. Pandey, E. Colomés, X. Oriols, Z. Zhan
{"title":"Tunneling Times in Graphene FET: From Fundamental Physics to Practical Engineering","authors":"M. Villani, D. Pandey, E. Colomés, X. Oriols, Z. Zhan","doi":"10.1109/CDE.2018.8597054","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597054","url":null,"abstract":"Because of its large Fermi velocity, graphene is expected to play an important role in the future of (small signal) radio frequency electronics. The connection between the Klein tunneling times of electrons and cut-off frequencies of graphene devices is not obvious. We argue in this paper that the trajectory-based Bohmian approach gives a very natural framework to quantify Klein tunneling times because of its ability to distinguish, not only between transmitted and reflected electrons, but also between reflected electrons that spend time in the barrier and those that do not. In particular, we study Klein tunneling times for electrons in a two-terminal graphene device constituted by a potential barrier between two metallic contacts. The main conclusion of this work is that the high graphene mobility is roughly independent of the presence of Klein tunneling phenomena in the active device region. Finally, the connection between transit (tunneling) times and cut-off frequencies in electronic devices is discussed.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124206928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Impedance Spectroscopy Microflow Cytometer for Cell Viability Tests 用于细胞活力测试的电阻抗谱微流式细胞仪
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597037
J. J. Gonzalez-Murillo, M. Monge-Azemar, J. Bartoli, A. Flores, M. Moreno, M. García-Celma, A. Romano-Rodríguez, W. Svendsen, J. Samitier, R. Rodriguez-Trujillo
{"title":"Electrical Impedance Spectroscopy Microflow Cytometer for Cell Viability Tests","authors":"J. J. Gonzalez-Murillo, M. Monge-Azemar, J. Bartoli, A. Flores, M. Moreno, M. García-Celma, A. Romano-Rodríguez, W. Svendsen, J. Samitier, R. Rodriguez-Trujillo","doi":"10.1109/CDE.2018.8597037","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597037","url":null,"abstract":"The micro flow cytometer presented here is a combination of a set of coplanar electrodes and a microfluidic channel to test cell viability based on Single-cell Electrical Impedance Spectroscopy analysis. The device was tested both with a control and with a treated HeLa cells suspension. Impedance signals acquired were filtered and processed to obtain the data, classifying and clustering the results by dead and living cells to make the cell viability test. Results were compared with the standards of MTT and Neubauer Chamber viability tests, showing that $0.83mu mathbf{L}$ of sample in the prototype designed and fabricated in this work was enough to obtain an approximate response of them.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125117334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermophotovoltaic Efficiency Measurement: Design and Analysis of a Novel Experimental Method 热光伏效率测量:一种新型实验方法的设计与分析
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596820
A. Cabrera, A. Ramos, I. Artacho, M. Gomez, K. Gavin, A. Martí, A. Datas
{"title":"Thermophotovoltaic Efficiency Measurement: Design and Analysis of a Novel Experimental Method","authors":"A. Cabrera, A. Ramos, I. Artacho, M. Gomez, K. Gavin, A. Martí, A. Datas","doi":"10.1109/CDE.2018.8596820","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596820","url":null,"abstract":"Thermophotovoltaic (TPV) devices produce the direct conversion of radiant heat into electricity using infrared sensitive photovoltaic (PV) cells. Despite its relatively mature stage of development a standardized method for the measurement of the TPV conversion efficiency hasn't been established yet, which represents a serious issue for the TPV research development. In this work we present results on a novel method to directly measure the conversion efficiency of a TPV device. This method relies on the direct measurement of the electrical power and the heat dissipated by the TPV cell in the steady state. In this article, we present preliminary results on the efficiency of a TPV device illuminated by a halogen lamp at different incident irradiances and vacuum conditions.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123918941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Theoretical Analysis of Elastic Sensitivity for Different Love Wave Propagation Modes 不同Love波传播模式弹性灵敏度的理论分析
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597133
J. R. Fragoso-Mora, O. Kolokoltsev, M. C. Horrillo, D. Matatazui
{"title":"Theoretical Analysis of Elastic Sensitivity for Different Love Wave Propagation Modes","authors":"J. R. Fragoso-Mora, O. Kolokoltsev, M. C. Horrillo, D. Matatazui","doi":"10.1109/CDE.2018.8597133","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597133","url":null,"abstract":"A theoretical study about the elastic effect in a Love wave sensor with nanostructured guiding/sensitive layer was carried out. Two possible cases, for gas sensing applications, were taken into account; 1) the gas penetrates completely into nanostructured guiding layer (guiding monolayer), and 2) the gas interacts exclusively with the surface of the guiding layer (guiding bilayer). The results showed a differentiated sensitivity behavior of the sensors in both cases.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122544468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NW-FET Modelling to be Integrated in a SET-FET Circuit 将NW-FET建模集成到SET-FET电路中
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596986
A. del Moral, E. Amat, J. Bausells, F. Pérez-Murano
{"title":"NW-FET Modelling to be Integrated in a SET-FET Circuit","authors":"A. del Moral, E. Amat, J. Bausells, F. Pérez-Murano","doi":"10.1109/CDE.2018.8596986","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596986","url":null,"abstract":"In this work, an electrical study of a vertical nanowire (NW)-based Field Effect Transistor (FET) is presented. The resulting output current from the modelled NW-FET is optimized in terms of multiple parameters, in order to enhance the behavior at subthreshold regime. Variability tolerance is analyzed as well, in order to attain improvements concerning average device performance and stability. A process simulation model for a NW-FET is built in perspective for its further manufacturability and implementation into hybrid SET-FET circuits.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134564385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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