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Silicon Photomultipliers for Determining Position of Microfluidic Radioactive Samples 测定微流控放射性样品位置的硅光电倍增管
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596997
B. Salvador, D. Escalante, L. Fernández, A. Corral, S. Camacho, J.M. Qucro, A. Luque
{"title":"Silicon Photomultipliers for Determining Position of Microfluidic Radioactive Samples","authors":"B. Salvador, D. Escalante, L. Fernández, A. Corral, S. Camacho, J.M. Qucro, A. Luque","doi":"10.1109/CDE.2018.8596997","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596997","url":null,"abstract":"An on-chip sensing circuit for measuring radioactivity in different positions of a microfluidic device through the use of silicon photomultipliers (SiPM) is presented. It is intended for use in a microfluidic platform producing radiopharmaceuticals for PET imaging. The results show that an array of SiPMs can be used to determine the position of a radioactive sample within a microfluidic chip with enough precision to be usable.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121054165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Discrimination of Aromas in Beer with Electronic Nose 用电子鼻鉴别啤酒香气
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596955
Carlos Sánchez, J. Lozano, José PedroSantos, A. Azabal, S. Ruiz-Valdepeñas
{"title":"Discrimination of Aromas in Beer with Electronic Nose","authors":"Carlos Sánchez, J. Lozano, José PedroSantos, A. Azabal, S. Ruiz-Valdepeñas","doi":"10.1109/CDE.2018.8596955","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596955","url":null,"abstract":"In this communication, we present a home-made and home-developed portable electronic nose used in discrimination of beer aromas. We have used samples of different types of beer with different alcoholic contents. The e-nose is equipped with an electronic pump and an electrovalve to control the way of the sampling gas, embedded control and instrumentation electronics, rechargeable batteries, touch screen and IEEE 802.11 transceiver for wireless communication. Several measurements were made to check the discrimination capability of the prototype in the detection of aromas in beer. The measurement and control program has been developed in Labview® and data classification with Artificial Neural Networks (ANNs) in Matlab®. Results show that the proposed prototype can discriminate the samples prepared with several concentrations of 84.72 % classification success rate.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122132173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Different Nanowire Materials Localized Growth and In-Situ Integration for Electronic Nose Applications 不同纳米线材料在电子鼻应用中的局部生长和原位集成
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597020
G. Domènech-Gil, A. Pardo, A. Romano-Rodríguez, L. Hrachowina, Michael S. Seifner, S. Barth, I. Gràcia, C. Cané
{"title":"Different Nanowire Materials Localized Growth and In-Situ Integration for Electronic Nose Applications","authors":"G. Domènech-Gil, A. Pardo, A. Romano-Rodríguez, L. Hrachowina, Michael S. Seifner, S. Barth, I. Gràcia, C. Cané","doi":"10.1109/CDE.2018.8597020","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597020","url":null,"abstract":"Nanowires of different materials have been grown site-selectively and integrated in one single chip using a new methodology. The chemical vapor deposition approach performed to grow these nanowire-based devices can be easily tuned, representing a simple, fast and adjustable fabrication process for the direct integration of nanowire meshes in multifunctional devices. This proof-of-concept study focuses on the deposition of SnO2, WO3 and Ge nanowires on the same chip. The prepared sensors have been tested under varying concentrations of CO, NO2and humidity diluted in synthetic air, exhibiting satisfactory gas sensing responses. A principal component analysis has been performed with the collected data and responses towards different gases can be easily classified in clusters. Therefore, the devices here presented are suitable for environmental monitoring.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130087115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of Graphene Based Nanosensors for the Detection of Nitrogen Dioxide 二氧化氮检测用石墨烯纳米传感器的研究
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597167
J.P. Santos, T. Polichctti, E. Hontañón, I. Sayago, M. Aleixandre, B. Alfano, M. Miglictta, G. DiFrancia, J. Lozano
{"title":"Study of Graphene Based Nanosensors for the Detection of Nitrogen Dioxide","authors":"J.P. Santos, T. Polichctti, E. Hontañón, I. Sayago, M. Aleixandre, B. Alfano, M. Miglictta, G. DiFrancia, J. Lozano","doi":"10.1109/CDE.2018.8597167","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597167","url":null,"abstract":"Graphene based sensors have been studied at different temperatures and with different dopants. Metal oxide nanoparticles have been added to pristine graphene in order to enhance its performance to nitrogen dioxide detection.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116817850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Graphene Sensors Operating at Room Temperature for Detection of Low Concentrations of NO2 室温下用于检测低浓度二氧化氮的石墨烯传感器
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596809
M. Aleixandre, M. C. Horrillo, Ana M. Benito, W. Maser
{"title":"Graphene Sensors Operating at Room Temperature for Detection of Low Concentrations of NO2","authors":"M. Aleixandre, M. C. Horrillo, Ana M. Benito, W. Maser","doi":"10.1109/CDE.2018.8596809","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596809","url":null,"abstract":"Reduced graphene oxide decorated with palladium was used to fabricate sensors that operated at room temperature. The sensors were exposed to different mixtures of synthetic air and NO2in the range of 0.1 ppmv to 1 ppmv. The sensors showed a good performance at room temperature, opening the possibility of using this kind of sensors for NO2sensing at very low power.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130739815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs AlGaN/GaN hemt直流肖特基栅漏电流的数值模拟
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596883
R. Rodríguez, B. González, J. García, A. Núñez, G. Toulon, F. Morancho
{"title":"Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs","authors":"R. Rodríguez, B. González, J. García, A. Núñez, G. Toulon, F. Morancho","doi":"10.1109/CDE.2018.8596883","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596883","url":null,"abstract":"Different causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125364781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ITO-Based Selective Contacts for Silicon Solar Devices 硅太阳能器件的ito选择性触点
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596978
S. Fernández, A. Braña, J. Grandal, J. González, F. García, M. B. Gómez-Mancebo
{"title":"ITO-Based Selective Contacts for Silicon Solar Devices","authors":"S. Fernández, A. Braña, J. Grandal, J. González, F. García, M. B. Gómez-Mancebo","doi":"10.1109/CDE.2018.8596978","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596978","url":null,"abstract":"Indium tin oxide (ITO) thin films are deposited at room temperature on p-type crystalline silicon substrates by direct-current magnetron (DC) sputtering. The ITO thickness is varied from 45 to 140 nm and the applied DC power, from 15 to 100W. Solar devices incorporating ITO as selective layer contact are fabricated using Ti/ Ag as metallic electrodes. The main aim of this work is to evaluate the impact of ITO thickness and sputtering conditions on the main solar parameters such as short-circuit current density and open-circuit voltage. The promising results show ITO could substitute conventional emitters such as hydrogenated amorphous silicon used in silicon technology.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133399028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40% 效率超过40%的栅格匹配GaInP/GaInAs/Ge三结太阳能电池的研制
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596996
L. Barrutia, I. García, E. Barrigón, M. Ochoa, I. Lombardero, M. Hinojosa, P. Caño, J. Bautista, L. Cifuentes, I. Rey‐Stolle, C. Algora
{"title":"Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40%","authors":"L. Barrutia, I. García, E. Barrigón, M. Ochoa, I. Lombardero, M. Hinojosa, P. Caño, J. Bautista, L. Cifuentes, I. Rey‐Stolle, C. Algora","doi":"10.1109/CDE.2018.8596996","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596996","url":null,"abstract":"This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ~ 40% at $sim 415times$ is presented.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117230194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
ZnO Thin Film Processed by Direct Laser Interference Patterning for Formaldehyde Detection 直接激光干涉图样加工ZnO薄膜用于甲醛检测
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597173
L. Parellada-Monreal, I. Castro-Hurtado, M. Martínez-Calderón, S. Olaizola, G. Mandayo
{"title":"ZnO Thin Film Processed by Direct Laser Interference Patterning for Formaldehyde Detection","authors":"L. Parellada-Monreal, I. Castro-Hurtado, M. Martínez-Calderón, S. Olaizola, G. Mandayo","doi":"10.1109/CDE.2018.8597173","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597173","url":null,"abstract":"Direct laser interference patterning (DLIP) is a fast nanostructuring technique able to generate periodic patterns in the submicrometric range, what modifies the morphology and structural properties of semiconductors. DLIP has been used on gas sensors based on ZnO thin film, generating 1D patterns. The nanostructuring has modified the crystal structure and the surface topography. DLIP acts similarly to a thermal treatment from the crystallographic point of view and has been used to detect low concentration of formaldehyde (HCHO). Comparable magnitude of responses (around the 25 % for 20 ppm of formaldehyde) are shown for sensors thermally treated sensors and sensors processed by DLIP.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123557841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Impedance Spectroscopy Microflow Cytometer for Cell Viability Tests 用于细胞活力测试的电阻抗谱微流式细胞仪
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/cde.2018.8596850
J. J. Gonzalez-Murillo, M. Monge-Azemar, J. Bartoli, A. Flores, M. Moreno, M. García-Celma, A. Romano-Rodríguez, W. Svendsen, J. Samitier, R. Rodriguez-Trujillo
{"title":"Electrical Impedance Spectroscopy Microflow Cytometer for Cell Viability Tests","authors":"J. J. Gonzalez-Murillo, M. Monge-Azemar, J. Bartoli, A. Flores, M. Moreno, M. García-Celma, A. Romano-Rodríguez, W. Svendsen, J. Samitier, R. Rodriguez-Trujillo","doi":"10.1109/cde.2018.8596850","DOIUrl":"https://doi.org/10.1109/cde.2018.8596850","url":null,"abstract":"The micro flow cytometer presented here is a combination of a set of coplanar electrodes and a microfluidic channel to test cell viability based on Single-cell Electrical Impedance Spectroscopy analysis. The device was tested both with a control and with a treated HeLa cells suspension. Impedance signals acquired were filtered and processed to obtain the data, classifying and clustering the results by dead and living cells to make the cell viability test. Results were compared with the standards of MTT and Neubauer Chamber viability tests, showing that 0.83μL of sample in the prototype designed and fabricated in this work was enough to obtain an approximate response of them.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131324634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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