2018 Spanish Conference on Electron Devices (CDE)最新文献

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Analysis of Fluctuation Sensitivity Map Algorithms Applied to a 10nm GAA NW FET 10nm GAA NW场效应管波动灵敏度映射算法分析
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597155
Pablo Andrés, N. Seoane, A. García-Loureiro, G. Indalecio
{"title":"Analysis of Fluctuation Sensitivity Map Algorithms Applied to a 10nm GAA NW FET","authors":"Pablo Andrés, N. Seoane, A. García-Loureiro, G. Indalecio","doi":"10.1109/CDE.2018.8597155","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597155","url":null,"abstract":"Industry and academia present an increasing interest in the spacial distribution of variability in nanodevices in order to minimise its effects. The fluctuation sensitivity map is a novel technique which not only provides with information about the spacial effect of different sources of variability in certain figures of merit, but also enables its estimation. Three algorithms have been developed and compared in order to find the optimal method to compute the sensitivity. Such algorithms were applied to the study of metal grain granularity work-function variations in a 10 nm gate length Si gate-all-around (GAA) nanowire field-effect transistor (FET). Having analysed both the predictive power and spacial determination of the sensitivity for each of the algorithms, it can be thereby concluded that the slope of the linear fit between the figure of merit and the work function for each discretised point in the gate is the best of the methods to determine the fluctuation sensitivity map.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"347 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133780105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Feasibility of Flat-Plate Heat-Sinks for Ultra-High Concentrations (> 2000 Suns) Using Microscale Solar Cells 微型太阳能电池用于超高浓度(> 2000太阳)平板吸热的可行性
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596790
Á. Valera, E. Fernández, F. Almonacid, P. Rodrigo
{"title":"Feasibility of Flat-Plate Heat-Sinks for Ultra-High Concentrations (> 2000 Suns) Using Microscale Solar Cells","authors":"Á. Valera, E. Fernández, F. Almonacid, P. Rodrigo","doi":"10.1109/CDE.2018.8596790","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596790","url":null,"abstract":"Concentrator photovoltaic (CPV) systems replace semiconductor material by cost-efficient optical elements. The potential cost reduction of these systems is closely related to the concentration factor because higher light concentrations imply lower amount of semiconductor material required for the solar cells. Thus, one promising way for improving this technology is moving towards ultra-high concentration levels (>2000 suns). However, the thermal management at such ultra-high light fluxes is difficult. The use of small-sized solar cells is beneficial for improving the thermal management. Among the possible cooling strategies, the use of flat-plate heat-sinks for passive cooling, if feasible, would be the simplest way to dissipate heat and would accelerate the development of ultra-high CPV prototypes. In this work, a thermal 3D finite-element model is used to investigate the possibilities of flat-plate heat-sinks for passive cooling at concentration ratios not tested to date (2000–10000 suns). Results show that a micro solar cells of 0.5mm x 0.5mm area can be thermally handled with conventional Aluminium flat-plate heat-sinks up to 10000 suns.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132638042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of GaAs Vertical Solar Cells at High Concentration Levels 高浓度砷化镓垂直太阳能电池的研究
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597046
Celia Outes, N. Seoane, F. Almonacid, E. Fernández, A. García-Loureiro
{"title":"Study of GaAs Vertical Solar Cells at High Concentration Levels","authors":"Celia Outes, N. Seoane, F. Almonacid, E. Fernández, A. García-Loureiro","doi":"10.1109/CDE.2018.8597046","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597046","url":null,"abstract":"In this present work we have studied vertical gallium arsenide (GaAs) solar cells using the Silvaco semiconductor device simulator. We have studied the main figures of merit (current, power and efficiency) that characterize the behavior of the solar cell. Moreover, the influence of sun concentration was analyzed. The results show a linear increase of the open circuit voltage with the logarithmic increases of sun concentration. Also, the efficiency reaches a maximum value of 23.25% for a concentration ratio of 10, 000 suns.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114373889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanostructured Tin Oxide Sensors Based on Nanofibers and Nanowires for Detection of Low NO2concentration 基于纳米纤维和纳米线的纳米结构氧化锡传感器检测低no2浓度
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597162
I. Sayago, E. Hontañón, J.P. Santos, M. Aleixandre, J. Lozano
{"title":"Nanostructured Tin Oxide Sensors Based on Nanofibers and Nanowires for Detection of Low NO2concentration","authors":"I. Sayago, E. Hontañón, J.P. Santos, M. Aleixandre, J. Lozano","doi":"10.1109/CDE.2018.8597162","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597162","url":null,"abstract":"The responses of nanostructured one-dimensional (1D) tin oxide NO2sensors at low temperatures have been compared. The structures studied were nanofibers (NFs) and nanowires (NWs). The sensors were used for NO2low concentration detection. NFs and NWs were grown onto micromachined silicon substrates by electrospinning and low-pressure chemical vapour deposition (LPCVD), respectively. Morphological characteristics of the 1D nanostructures are investigated by scanning electron microscopy (SEM) and the sensing properties of the sensors are assessed and compared.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116658160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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