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Electrical Modeling of Monolithically Integrated GMR Based Current Sensors 基于单片集成GMR电流传感器的电建模
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597082
M.D. Cubells-Beltrán, Càndid Reig, A. Demarcellis, S. Cardoso, P. Freitas
{"title":"Electrical Modeling of Monolithically Integrated GMR Based Current Sensors","authors":"M.D. Cubells-Beltrán, Càndid Reig, A. Demarcellis, S. Cardoso, P. Freitas","doi":"10.1109/CDE.2018.8597082","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597082","url":null,"abstract":"We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35mu mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123344125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Lab-on-PCB: Low Cost 3D Microelectrode Array Device for Extracellular Recordings pcb上的实验室:用于细胞外记录的低成本3D微电极阵列设备
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596774
M. Cabello, C. Aracil, F. Perdigones, J. Quero, Paulo R. F. Rocha
{"title":"Lab-on-PCB: Low Cost 3D Microelectrode Array Device for Extracellular Recordings","authors":"M. Cabello, C. Aracil, F. Perdigones, J. Quero, Paulo R. F. Rocha","doi":"10.1109/CDE.2018.8596774","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596774","url":null,"abstract":"Lab on a Chip (LOC) technologies are emerging candidates for highly sensitive and real time disease diagnostics and treatments. Yet, the high manufacturing costs of LOC devices has been a downfall. Microelectrode arrays (MEA), as a subclass of LOC technologies, record extracellular field potentials of cells or tissues adhered to the electrodes. The electrical reaction of cells to different pharmacological compounds allows in this way better and real time diagnostics. A current disadvantage is the limited signal-to-noise ratio (SNR) due to (1) the weak coupling between cells and sensing electrodes and (2) the high electrode impedance of current MEAs. In this paper, we present a low cost fabrication process to develop new LOC devices using Printed Circuit Board Technologies (Lab-on-PCB), coupled with 3D microelectrode arrays to improve SNR by optimizing cell-electrode coupling, decreasing the electrode impedance and improving the contact in organotypic cultures. Apart of the fabrication process, the characterization of 3D gold microelectrodes by measuring its impedance and baseline noise under different electrolytes conductivities is presented. Impedance measurements show similar values to state-of-the-art MEAs, e.g, $1mathbf{K}Omega$ at high frequencies, as well as a baseline noise in the order of the 10 $mumathbf{V}_{mathbf{p}mathbf{p}}$ for a 100 $mumathbf{m}$ diameter microelectrode. Hence, we show that Lab on PCB devices are a valid low cost solution for the new generation of electrophysiological LOC applications.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114653935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electron Injection Model for Linear and Parabolic 2D Materials: Noise as a Parabolic or Linear Band Detector 线性和抛物线二维材料的电子注入模型:作为抛物线或线性波段检测器的噪声
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596808
D. Pandey, Z. Zhan, E. Colomés, M. Villani, X. Oriols
{"title":"Electron Injection Model for Linear and Parabolic 2D Materials: Noise as a Parabolic or Linear Band Detector","authors":"D. Pandey, Z. Zhan, E. Colomés, M. Villani, X. Oriols","doi":"10.1109/CDE.2018.8596808","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596808","url":null,"abstract":"The proper modeling of the 2D materials requires a discussion on the boundary conditions between the device active region (open system) and the environment, to determine how and when electrons are injected. In devices with gapless materials, like graphene, the injection of electrons with positive and negative kinetic energies are needed for an accurate description of the band-to-band Klein tunneling. We develop a full quantum injection model for 2D materials based on quantum trajectories. Numerical results with the BITLLES simulator will be presented showing the successful application of the electron injection model for a full quantum treatment of DC, AC, transient and noise behaviors of 2D devices. We will also discuss how the noise (fluctuations) of the electrical current in ballistic devices, with parabolic or linear band dispersion have some peculiarities which can be used to discern between linear and parabolic band materials.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"26 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132928210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resistive Switching Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films 原子层沉积ZrO2-HfO2薄膜的电阻开关特性
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596925
O. G. Ossorio, S. Dueñas, H. Castán, A. Tamm, K. Kalam, H. Seemen, K. Kukli
{"title":"Resistive Switching Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films","authors":"O. G. Ossorio, S. Dueñas, H. Castán, A. Tamm, K. Kalam, H. Seemen, K. Kukli","doi":"10.1109/CDE.2018.8596925","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596925","url":null,"abstract":"In this work we study the resistive switching properties of ZrO2-HfO2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO2 and Hf02 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"382 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Constrained Many-Objective Evolutionary Extraction Procedure for an OTFT Compact Model Including Contact Effects 包含接触效应的OTFT紧凑模型的约束多目标进化提取方法
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596928
A. Romero, J. González, J. A. Jiménez-Tejada
{"title":"Constrained Many-Objective Evolutionary Extraction Procedure for an OTFT Compact Model Including Contact Effects","authors":"A. Romero, J. González, J. A. Jiménez-Tejada","doi":"10.1109/CDE.2018.8596928","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596928","url":null,"abstract":"Parameter extraction in organic thin film transistors (OTFTs) is a labour intensive task when contact effects are present. In this work, a constrained many-objective evolutionary parameter extraction procedure is used to determine the parameters of a compact model for the current-voltage characteristics of OTFTs that also includes a model for the contacts. This evolutionary procedure ensures that the extracted parameters comply with the physical meaning on which they are based by adding rules in form of optimization objectives and constrains for the different parameters. The evolutionary procedure is applied to experimental output characteristics of OTFTs. Our numerical results show an excellent agreement with the experimental data.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128900112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Modeling SiGe Through Classical Molecular Dynamics Simulations: Chasing an Appropriate Empirical Potential 通过经典分子动力学模拟模拟SiGe:寻找合适的经验势
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597030
L. Martín, I. Santos, P. López, L. Marqués, M. Aboy, L. Pelaz
{"title":"Modeling SiGe Through Classical Molecular Dynamics Simulations: Chasing an Appropriate Empirical Potential","authors":"L. Martín, I. Santos, P. López, L. Marqués, M. Aboy, L. Pelaz","doi":"10.1109/CDE.2018.8597030","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597030","url":null,"abstract":"We used classical molecular dynamics simulations to reproduce basic properties of Si, Ge and SiGe using different empirical potentials available in the literature. The empirical potential that offered the better compromise with experimental data was used to study the surface stability of these materials. We considered the (100), $(100)2times 1$ and (111) surfaces, and we found the processing temperature range to avoid the structural degradation of studied surfaces.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"292 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123177679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of the Subcell Spectral Response of III-V Compound Semiconductors on the Optical Performance of High-CPV Systems III-V型化合物半导体亚电池光谱响应对高cpv系统光学性能的影响
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596995
J. P. Ferrer-Rodríguez, E. Fernández, F. Almonacid, P. Pérez-Higueras, H. Baig, T. Mallick
{"title":"Impact of the Subcell Spectral Response of III-V Compound Semiconductors on the Optical Performance of High-CPV Systems","authors":"J. P. Ferrer-Rodríguez, E. Fernández, F. Almonacid, P. Pérez-Higueras, H. Baig, T. Mallick","doi":"10.1109/CDE.2018.8596995","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596995","url":null,"abstract":"High Concentrator Photovoltaics (HCPV) modules are typically equipped with multi-junction solar cells (MJSC) based on III-V compound semiconductors, which are typically either triple-junction (TJSC) or four-junction solar cells (FJSC). This work analyzes the impact of changing the number of subcells and their bandgaps in the optical efficiency. An exhaustive optical modelling is applied for estimating subcell short-circuit current density values under the concentrated illumination. The same typical concentrator of Fresnel lens plus a refractive homogenizer concentrator is applied to two different MJSCs. The optical efficiency when using the FJSC is 86.0%-almost 2% higher than with the TJSC. The acceptance angle results are similar for both cases, around 1.22°. Concerning the spectral matching ratio, SMR, the FJSC unit shows more distant values respect to the equivalent conditions to the standard illumination than the TJSC, due to the lower bandgaps of the FJSC.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124234791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyzing Outdoor Degradation of Flexible PEDOT-Free P3HT; PCBM Organic Solar Cells Using Impedance Spectroscopy 柔性无pedot P3HT户外降解分析阻抗谱技术在有机太阳能电池中的应用
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596929
G. Delpozo, D. Marton-Martin, B. Arredondo, M. Paniagua, B. Romero, P. Apilo
{"title":"Analyzing Outdoor Degradation of Flexible PEDOT-Free P3HT; PCBM Organic Solar Cells Using Impedance Spectroscopy","authors":"G. Delpozo, D. Marton-Martin, B. Arredondo, M. Paniagua, B. Romero, P. Apilo","doi":"10.1109/CDE.2018.8596929","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596929","url":null,"abstract":"Flexible inverted organic solar cells (OSC) based on Poly(3-hexylthiophene-2, 5-diyl): [6], [6]-Phenyl C61 butyric acid methyl ester (P3HT: PCBM) have been manufactured and degraded using two different degradation protocols: six cells were kept in dark conditions, according to ISOS-D1 protocol, while other six were placed outdoor in a solar tracker, according to ISOS-O1 protocol. Pristine and degraded devices have been characterized in terms of I-V curves and Impedance Spectroscopy (IS). After two months, the efficiency drops from 2.83 % to 2.55 % for devices kept in dark conditions, and to 0.85 % for devices placed outdoor. Impedance spectra, measured before and after degradation have been fitted with an equivalent circuit that models recombination and diffusion processes. The evolution of the circuital parameters obtained from the IS fit show that devices degraded outside present i) a significant increase of the transport resistance, which hinders charge conduction, and ii) a decrease of majority carrier mobility, which is related to a loss of the blend crystallinity.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117027164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Efficient Mobility Calculation for Quantum Dot Superlattices 量子点超晶格的高效迁移率计算
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8597138
E. S. Skibinsky-Gitlin, F. Gómez-Campos, S. Rodríguez-Bolívar, M. Califano, J. E. Carceller
{"title":"Efficient Mobility Calculation for Quantum Dot Superlattices","authors":"E. S. Skibinsky-Gitlin, F. Gómez-Campos, S. Rodríguez-Bolívar, M. Califano, J. E. Carceller","doi":"10.1109/CDE.2018.8597138","DOIUrl":"https://doi.org/10.1109/CDE.2018.8597138","url":null,"abstract":"The aim of this work is to calculate the electron mobility in a two dimensional periodic superlattice of quantum dots containing different-sized quantum dots. A simulation has been carried out using the tight binding method for calculating the energy levels and eigenstates of the periodic lattice. The different sized, non-periodic quantum dots are introduced as perturbed potential scattering centers and their effect has been included in the Fermi distribution to obtain a temperature dependent mobility tensor for easy comparison with experimental data.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124999822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions 在恶劣辐射环境下硅器件中的离子降解:损伤-掺杂相互作用的建模
2018 Spanish Conference on Electron Devices (CDE) Pub Date : 2018-11-01 DOI: 10.1109/CDE.2018.8596953
P. López, M. Aboy, I. Muñoz, I. Santos, L. Marqués, C. Couso, M. Ullán, L. Pelaz
{"title":"ION Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions","authors":"P. López, M. Aboy, I. Muñoz, I. Santos, L. Marqués, C. Couso, M. Ullán, L. Pelaz","doi":"10.1109/CDE.2018.8596953","DOIUrl":"https://doi.org/10.1109/CDE.2018.8596953","url":null,"abstract":"Electronic devices operating in harsh radiation environments must withstand high radiation levels with minimal performance degradation. Recent experiments on the radiation hardness of a new vertical p-type JFET power switch have shown a significant reduction of forward drain current under non-ionizing conditions. In this work, atomistic simulations are used to study the impact of irradiation-induced displacement damage on forward characteristics. Damage models have been updated to produce a better description of damage-dopant interactions at RT. Our results show that excess self-interstitials produced by irradiation deactivate a significant amount of B atoms, thus reducing the effective dopant concentration.","PeriodicalId":361044,"journal":{"name":"2018 Spanish Conference on Electron Devices (CDE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130252288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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